Ferroelectric thin films using oxides as raw materials

Detalhes bibliográficos
Autor(a) principal: Araújo,E.B.
Data de Publicação: 1999
Outros Autores: Eiras,J.A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004
Resumo: This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Infrared Spectroscopy (IR) and Rutherford Backscattering Spectroscopy (RBS). The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.
id ABMABCABPOL-1_4ca2fca6724413ea7a5a17ad5c1a188e
oai_identifier_str oai:scielo:S1516-14391999000100004
network_acronym_str ABMABCABPOL-1
network_name_str Materials research (São Carlos. Online)
repository_id_str
spelling Ferroelectric thin films using oxides as raw materialsferroelectric filmsPZTbismuth titanateThis work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Infrared Spectroscopy (IR) and Rutherford Backscattering Spectroscopy (RBS). The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.ABM, ABC, ABPol1999-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004Materials Research v.2 n.1 1999reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14391999000100004info:eu-repo/semantics/openAccessAraújo,E.B.Eiras,J.A.eng2000-01-27T00:00:00Zoai:scielo:S1516-14391999000100004Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2000-01-27T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Ferroelectric thin films using oxides as raw materials
title Ferroelectric thin films using oxides as raw materials
spellingShingle Ferroelectric thin films using oxides as raw materials
Araújo,E.B.
ferroelectric films
PZT
bismuth titanate
title_short Ferroelectric thin films using oxides as raw materials
title_full Ferroelectric thin films using oxides as raw materials
title_fullStr Ferroelectric thin films using oxides as raw materials
title_full_unstemmed Ferroelectric thin films using oxides as raw materials
title_sort Ferroelectric thin films using oxides as raw materials
author Araújo,E.B.
author_facet Araújo,E.B.
Eiras,J.A.
author_role author
author2 Eiras,J.A.
author2_role author
dc.contributor.author.fl_str_mv Araújo,E.B.
Eiras,J.A.
dc.subject.por.fl_str_mv ferroelectric films
PZT
bismuth titanate
topic ferroelectric films
PZT
bismuth titanate
description This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Infrared Spectroscopy (IR) and Rutherford Backscattering Spectroscopy (RBS). The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.
publishDate 1999
dc.date.none.fl_str_mv 1999-01-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S1516-14391999000100004
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.2 n.1 1999
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
_version_ 1754212656521150464