Ferroelectric thin films using oxides as raw materials
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004 |
Resumo: | This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Infrared Spectroscopy (IR) and Rutherford Backscattering Spectroscopy (RBS). The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively. |
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Materials research (São Carlos. Online) |
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Ferroelectric thin films using oxides as raw materialsferroelectric filmsPZTbismuth titanateThis work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Infrared Spectroscopy (IR) and Rutherford Backscattering Spectroscopy (RBS). The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively.ABM, ABC, ABPol1999-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004Materials Research v.2 n.1 1999reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14391999000100004info:eu-repo/semantics/openAccessAraújo,E.B.Eiras,J.A.eng2000-01-27T00:00:00Zoai:scielo:S1516-14391999000100004Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2000-01-27T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Ferroelectric thin films using oxides as raw materials |
title |
Ferroelectric thin films using oxides as raw materials |
spellingShingle |
Ferroelectric thin films using oxides as raw materials Araújo,E.B. ferroelectric films PZT bismuth titanate |
title_short |
Ferroelectric thin films using oxides as raw materials |
title_full |
Ferroelectric thin films using oxides as raw materials |
title_fullStr |
Ferroelectric thin films using oxides as raw materials |
title_full_unstemmed |
Ferroelectric thin films using oxides as raw materials |
title_sort |
Ferroelectric thin films using oxides as raw materials |
author |
Araújo,E.B. |
author_facet |
Araújo,E.B. Eiras,J.A. |
author_role |
author |
author2 |
Eiras,J.A. |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Araújo,E.B. Eiras,J.A. |
dc.subject.por.fl_str_mv |
ferroelectric films PZT bismuth titanate |
topic |
ferroelectric films PZT bismuth titanate |
description |
This work describes an alternative method for the preparation of ferroelectric thin films based on pre-calcination of oxides, to be used as precursor material for a solution preparation. In order to show the viability of the proposed method, PbZr0.53Ti0.47O3 and Bi4Ti3O12 thin films were prepared on fused quartz and Si substrates. The results were analyzed by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Infrared Spectroscopy (IR) and Rutherford Backscattering Spectroscopy (RBS). The films obtained show good quality, homogeneity and the desired stoichiometry. The estimated thickness for one layer deposition was approximately 1000 Å and 1500 Å for Bi4Ti3O12 and PbZr0.53Ti0.47O3 films, respectively. |
publishDate |
1999 |
dc.date.none.fl_str_mv |
1999-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000100004 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S1516-14391999000100004 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.2 n.1 1999 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212656521150464 |