Charge-carrier diffusion length in photorefractive crystals computed from the initial hologram phase shift

The plane shift between the pattern of light onto a photorefractive crystal and the resulting hologram at the very beginning of the recording process in two-wave mixing is analyzed and measured as a function of the applied electric field. These data allow one to compute the diffusion length of photo...

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Access type:openAccess
Publication Date:1997
Main Author: Freschi, AA
Other Authors: Garcia, PM, Frejlich, J
Document type: Article
Language:eng
Published: Woodbury
Amer Inst Physics
Online Access:http://www.repositorio.unicamp.br/jspui/handle/REPOSIP/62935
http://www.repositorio.unicamp.br/handle/REPOSIP/62935
http://repositorio.unicamp.br/jspui/handle/REPOSIP/62935
Citation:Applied Physics Letters. Amer Inst Physics, v. 71, n. 17, n. 2427, n. 2429, 1997.
Portuguese abstract:The plane shift between the pattern of light onto a photorefractive crystal and the resulting hologram at the very beginning of the recording process in two-wave mixing is analyzed and measured as a function of the applied electric field. These data allow one to compute the diffusion length of photoexcited charge carriers and to evaluate the actual electric field inside the crystal. A diffusion length of 0.14 mu m is measured in a nominally undoped photorefractive Bi12TiO20 crystal using a 532 nm wavelength laser illumination, in agreement with results obtained from other methods. (C) 1997 American Institute of Physics. [S0003-6951(97)02243-2].