Pd-vacancy complex in Si identified with the perturbed angular correlation technique

Detalhes bibliográficos
Autor(a) principal: BRETT, D.A.
Data de Publicação: 2005
Outros Autores: DOGRA, R., BYRNE, A.P., MESTNIK FILHO, J., RIDGWAY, M.C.
Tipo de documento: Artigo
Texto Completo: http://repositorio.ipen.br:8080/xmlui/handle/123456789/7649
id IPEN_932b2e81dca476f6825245ae9a3390f9
oai_identifier_str oai:repositorio.ipen.br:123456789/7649
network_name_str Repositório Institucional do IPEN
title Pd-vacancy complex in Si identified with the perturbed angular correlation technique
author BRETT, D.A.
author2 DOGRA, R.
BYRNE, A.P.
MESTNIK FILHO, J.
RIDGWAY, M.C.
topic palladium
vacancies
probes
silicon
perturbed angular correlation
electric fields
deep level transient spectroscopy
electron spin resonance
publishDate 2005
format article
url http://repositorio.ipen.br:8080/xmlui/handle/123456789/7649
instname_str Instituto de Pesquisas Energéticas e Nucleares (IPEN)
instacron_str IPEN