Síntese eletroquímica e caracterização de filmes finos de Sb2Se3

Detalhes bibliográficos
Autor(a) principal: Costa, Magno Barcelos
Data de Publicação: 2017
Tipo de documento: Dissertação
Idioma: por
Título da fonte: Repositório Institucional da UFSCAR
Texto Completo: https://repositorio.ufscar.br/handle/ufscar/9885
Resumo: Due to the environmental appeal, the shortage of raw material and the chemical complexity of some systems employed at photovoltaic devices, interest has been growing for semiconductors composed of abundant, low toxicity and less costly elements. Among these, the Sb2Se3 has gained attention, because besides having all the mentioned characteristics, it presents good photovoltaic properties. The present work presents the electro-obtaining of Sb2Se3 thin films, as well as the exploratory study of its properties from the effects of the thermal treatment (TT), the electrodeposition parameters and the addition of Fe2+ as a dopant to its photoelectrocatalytic activity in the reduction reaction of H+. The films were prepared by potentiostatic co-electrodeposition on FTO in a bath composed of K(SbO)C4H4O6 and SeO2 in 0.5 mol L-1 Na2SO4/H2SO4 – pH 2.0. After obtaining, they were submitted to different TT conditions under atmosphere of Se(vapor)/N2. Cyclic voltammetries were used to evaluate the electrochemical process of each separate element and the binary system. For the study of the electrodeposition parameters, the concentrations of the Sb and Se precursors (SbO+ and H2SeO3, respectively), the total deposition charge and the type of the supporting electrolyte were evaluated. Finally, the study of the addition of Fe2+ in the bath allowed to evaluate its effect under different concentrations of the dopant. Thus, through the morphological-structural analysis, band-gap and photoelectrocatalytic activity, it was possible to reach the optimized condition of obtaining Sb2Se3 films. Of all the proposed TT conditions, the one submitted to 300 °C for 3 h showed better results, exhibiting good optoelectronic property and photoactivity, with band gap of 1.08 eV and average photocurrent of 168.15 μA cm-2, respectively. With the study of the electrodeposition parameters allowed to reach the following optimized condition: bath with 2.5 mmol L-1 K(SbO)C4H4O6 and 2.0 mmol L-1 SeO2 in 0.5 mol L-1 Na2SO4/H2SO4 – pH 2.0, and deposition total charge of 600 mC, besides of the applied potential of -0.6 V vs. Ag/AgCl/Cl-(sat. KCl). In the doping study, the incorporation of Fe2+ caused low influence on the band gap of the films and on their morphological-structural properties. In the film obtained from the deposition bath composed of 5% Fe, it presented a similar photocurrent to the non-doped film, however, with carrier density in an order of magnitude three times higher, i.e., 1,0 x 10^19 cm-3, showing an important characteristic for a high efficiency and fill factor in the case a photovoltaic device was installed.
id SCAR_c621d755c0c4df7a77ae20ebaf1313c6
oai_identifier_str oai:repositorio.ufscar.br:ufscar/9885
network_acronym_str SCAR
network_name_str Repositório Institucional da UFSCAR
repository_id_str
spelling Costa, Magno BarcelosMascaro, Lucia Helenahttp://lattes.cnpq.br/9130022476352844http://lattes.cnpq.br/27258562504178862018-05-07T19:44:51Z2018-05-07T19:44:51Z2017-12-05COSTA, Magno Barcelos. Síntese eletroquímica e caracterização de filmes finos de Sb2Se3. 2017. Dissertação (Mestrado em Química) – Universidade Federal de São Carlos, São Carlos, 2017. Disponível em: https://repositorio.ufscar.br/handle/ufscar/9885.https://repositorio.ufscar.br/handle/ufscar/9885Due to the environmental appeal, the shortage of raw material and the chemical complexity of some systems employed at photovoltaic devices, interest has been growing for semiconductors composed of abundant, low toxicity and less costly elements. Among these, the Sb2Se3 has gained attention, because besides having all the mentioned characteristics, it presents good photovoltaic properties. The present work presents the electro-obtaining of Sb2Se3 thin films, as well as the exploratory study of its properties from the effects of the thermal treatment (TT), the electrodeposition parameters and the addition of Fe2+ as a dopant to its photoelectrocatalytic activity in the reduction reaction of H+. The films were prepared by potentiostatic co-electrodeposition on FTO in a bath composed of K(SbO)C4H4O6 and SeO2 in 0.5 mol L-1 Na2SO4/H2SO4 – pH 2.0. After obtaining, they were submitted to different TT conditions under atmosphere of Se(vapor)/N2. Cyclic voltammetries were used to evaluate the electrochemical process of each separate element and the binary system. For the study of the electrodeposition parameters, the concentrations of the Sb and Se precursors (SbO+ and H2SeO3, respectively), the total deposition charge and the type of the supporting electrolyte were evaluated. Finally, the study of the addition of Fe2+ in the bath allowed to evaluate its effect under different concentrations of the dopant. Thus, through the morphological-structural analysis, band-gap and photoelectrocatalytic activity, it was possible to reach the optimized condition of obtaining Sb2Se3 films. Of all the proposed TT conditions, the one submitted to 300 °C for 3 h showed better results, exhibiting good optoelectronic property and photoactivity, with band gap of 1.08 eV and average photocurrent of 168.15 μA cm-2, respectively. With the study of the electrodeposition parameters allowed to reach the following optimized condition: bath with 2.5 mmol L-1 K(SbO)C4H4O6 and 2.0 mmol L-1 SeO2 in 0.5 mol L-1 Na2SO4/H2SO4 – pH 2.0, and deposition total charge of 600 mC, besides of the applied potential of -0.6 V vs. Ag/AgCl/Cl-(sat. KCl). In the doping study, the incorporation of Fe2+ caused low influence on the band gap of the films and on their morphological-structural properties. In the film obtained from the deposition bath composed of 5% Fe, it presented a similar photocurrent to the non-doped film, however, with carrier density in an order of magnitude three times higher, i.e., 1,0 x 10^19 cm-3, showing an important characteristic for a high efficiency and fill factor in the case a photovoltaic device was installed.Devido o apelo ambiental, a escassez de matéria prima e a complexidade química de alguns sistemas empregados em dispositivos fotovoltaicos, tem crescido o interesse por semicondutores compostos de elementos abundantes, de baixa toxicidade e menos custosos. Dentre esses, o Sb2Se3 tem ganhado atenção, pois além de possuir todas as características citadas, apresenta boas propriedades fotovoltaicas. O presente trabalho apresenta a eletro-obtenção de filmes finos de Sb2Se3, bem como o estudo exploratório de suas propriedades a partir dos efeitos do tratamento térmico (TT), dos parâmetros de eletrodeposição e da adição de Fe2+ como dopante frente à sua atividade fotoeletrocatalítica na reação de redução de H+. Os filmes foram preparados por co-eletrodeposição potenciostática sobre FTO em um banho composto de K(SbO)C4H4O6 e SeO2 em Na2SO4 0,5 mol L-1/H2SO4 – pH 2,0. Após obtenção, eles foram submetidos à diferentes condições de TT sob atmosfera de Se(vapor)/N2. Voltametrias cíclicas foram usadas para avaliar o processo eletroquímico de cada elemento separado e o sistema binário. Para o estudo dos parâmetros de eletrodeposição foram avaliadas as concentrações dos precursores de Sb e Se no banho (SbO+ e H2SeO3, respectivamente), a carga total de deposição e o tipo do eletrólito de suporte. Finalmente, o estudo da adição de Fe2+ no banho permitiu avaliar seus efeitos sob diferentes concentrações do dopante. Assim, por meio da análises morfológicas-estruturais, band gap e atividade fotoeletrocatalítica foi possível alcançar a condição otimizada de obtenção dos filmes de Sb2Se3. De todas as condições de TT propostas, a submetida a 300 °C por 3 h revelou melhores resultados, exibindo boa propriedade optoeletrônica e fotoatividade, com band gap de 1,08 eV e fotocorrente média de 168,15 µA cm-2. Com o estudo dos parâmetros de eletrodeposição permitiu chegar à seguinte condição otimizada: banho com 2,5 mmol L-1 de K(SbO)C4H4O6 e 2,0 mmol L-1 de SeO2 em Na2SO4 0,5 mol L-1/H2SO4 – pH 2,0, e carga total de deposição de 600 mC, além do potencial aplicado de -0,6 V vs. Ag/AgCl/Cl-(KCl sat.). No estudo de dopagem, a incorporação de Fe2+ causou baixa influencia no band gap dos filmes e em suas propriedades morfológicas-estruturais. O filme obtido a partir do banho de deposição composto por 5% de Fe apresentou fotocorrente similar ao filme não dopado, porém, com densidade de portadores numa ordem de grandeza três vezes maior, i.e., 1,0 x 10^19 cm-3, mostrando-se uma característica importante para uma alta eficiência e fator de preenchimento caso um dispositivo fotovoltaico fosse montado.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)CNPQ: 164429/2015-8porUniversidade Federal de São CarlosCâmpus São CarlosPrograma de Pós-Graduação em Química - PPGQUFSCarSeleneto de antimônioFotoeletroquímicaTratamento térmicoDopagemEletrodeposiçãoAntimony selenideThermal treatmentDopingElectrodepositionCIENCIAS EXATAS E DA TERRA::QUIMICA::FISICO-QUIMICA::ELETROQUIMICASíntese eletroquímica e caracterização de filmes finos de Sb2Se3Electrochemical synthesis and characterization of Sb2Se3 thin filmsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisOnlineinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINALDissertação final 2.pdfDissertação final 2.pdfapplication/pdf2928848https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/1/Disserta%c3%a7%c3%a3o%20final%202.pdfa3c1f38bdff573c2400be4c1a825951aMD51Carta da versão final da dissertação.jpgCarta da versão final da dissertação.jpgimage/jpeg704540https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/2/Carta%20da%20vers%c3%a3o%20final%20da%20disserta%c3%a7%c3%a3o.jpg7ecb6e0745770a925ef70683753d6a18MD52LICENSElicense.txtlicense.txttext/plain; charset=utf-81957https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/3/license.txtae0398b6f8b235e40ad82cba6c50031dMD53TEXTDissertação final 2.pdf.txtDissertação final 2.pdf.txtExtracted texttext/plain138017https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/4/Disserta%c3%a7%c3%a3o%20final%202.pdf.txte586e9b79be83106ee76b19039ae8851MD54THUMBNAILCarta da versão final da dissertação.jpg.jpgCarta da versão final da dissertação.jpg.jpgGenerated Thumbnailimage/jpeg1313https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/5/Carta%20da%20vers%c3%a3o%20final%20da%20disserta%c3%a7%c3%a3o.jpg.jpgbbd2a48fd0e8c64bdadc82cbd81e8803MD55Dissertação final 2.pdf.jpgDissertação final 2.pdf.jpgIM Thumbnailimage/jpeg8813https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/6/Disserta%c3%a7%c3%a3o%20final%202.pdf.jpg98f7f2d35ea7ab258d1643ad8a88643cMD56ufscar/98852019-09-11 03:03:55.493oai:repositorio.ufscar.br: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Repositório InstitucionalPUBhttps://repositorio.ufscar.br/oai/requestopendoar:43222019-09-11T03:03:55Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)false
dc.title.por.fl_str_mv Síntese eletroquímica e caracterização de filmes finos de Sb2Se3
dc.title.alternative.eng.fl_str_mv Electrochemical synthesis and characterization of Sb2Se3 thin films
title Síntese eletroquímica e caracterização de filmes finos de Sb2Se3
spellingShingle Síntese eletroquímica e caracterização de filmes finos de Sb2Se3
Costa, Magno Barcelos
Seleneto de antimônio
Fotoeletroquímica
Tratamento térmico
Dopagem
Eletrodeposição
Antimony selenide
Thermal treatment
Doping
Electrodeposition
CIENCIAS EXATAS E DA TERRA::QUIMICA::FISICO-QUIMICA::ELETROQUIMICA
title_short Síntese eletroquímica e caracterização de filmes finos de Sb2Se3
title_full Síntese eletroquímica e caracterização de filmes finos de Sb2Se3
title_fullStr Síntese eletroquímica e caracterização de filmes finos de Sb2Se3
title_full_unstemmed Síntese eletroquímica e caracterização de filmes finos de Sb2Se3
title_sort Síntese eletroquímica e caracterização de filmes finos de Sb2Se3
author Costa, Magno Barcelos
author_facet Costa, Magno Barcelos
author_role author
dc.contributor.authorlattes.por.fl_str_mv http://lattes.cnpq.br/2725856250417886
dc.contributor.author.fl_str_mv Costa, Magno Barcelos
dc.contributor.advisor1.fl_str_mv Mascaro, Lucia Helena
dc.contributor.advisor1Lattes.fl_str_mv http://lattes.cnpq.br/9130022476352844
contributor_str_mv Mascaro, Lucia Helena
dc.subject.por.fl_str_mv Seleneto de antimônio
Fotoeletroquímica
Tratamento térmico
Dopagem
Eletrodeposição
topic Seleneto de antimônio
Fotoeletroquímica
Tratamento térmico
Dopagem
Eletrodeposição
Antimony selenide
Thermal treatment
Doping
Electrodeposition
CIENCIAS EXATAS E DA TERRA::QUIMICA::FISICO-QUIMICA::ELETROQUIMICA
dc.subject.eng.fl_str_mv Antimony selenide
Thermal treatment
Doping
Electrodeposition
dc.subject.cnpq.fl_str_mv CIENCIAS EXATAS E DA TERRA::QUIMICA::FISICO-QUIMICA::ELETROQUIMICA
description Due to the environmental appeal, the shortage of raw material and the chemical complexity of some systems employed at photovoltaic devices, interest has been growing for semiconductors composed of abundant, low toxicity and less costly elements. Among these, the Sb2Se3 has gained attention, because besides having all the mentioned characteristics, it presents good photovoltaic properties. The present work presents the electro-obtaining of Sb2Se3 thin films, as well as the exploratory study of its properties from the effects of the thermal treatment (TT), the electrodeposition parameters and the addition of Fe2+ as a dopant to its photoelectrocatalytic activity in the reduction reaction of H+. The films were prepared by potentiostatic co-electrodeposition on FTO in a bath composed of K(SbO)C4H4O6 and SeO2 in 0.5 mol L-1 Na2SO4/H2SO4 – pH 2.0. After obtaining, they were submitted to different TT conditions under atmosphere of Se(vapor)/N2. Cyclic voltammetries were used to evaluate the electrochemical process of each separate element and the binary system. For the study of the electrodeposition parameters, the concentrations of the Sb and Se precursors (SbO+ and H2SeO3, respectively), the total deposition charge and the type of the supporting electrolyte were evaluated. Finally, the study of the addition of Fe2+ in the bath allowed to evaluate its effect under different concentrations of the dopant. Thus, through the morphological-structural analysis, band-gap and photoelectrocatalytic activity, it was possible to reach the optimized condition of obtaining Sb2Se3 films. Of all the proposed TT conditions, the one submitted to 300 °C for 3 h showed better results, exhibiting good optoelectronic property and photoactivity, with band gap of 1.08 eV and average photocurrent of 168.15 μA cm-2, respectively. With the study of the electrodeposition parameters allowed to reach the following optimized condition: bath with 2.5 mmol L-1 K(SbO)C4H4O6 and 2.0 mmol L-1 SeO2 in 0.5 mol L-1 Na2SO4/H2SO4 – pH 2.0, and deposition total charge of 600 mC, besides of the applied potential of -0.6 V vs. Ag/AgCl/Cl-(sat. KCl). In the doping study, the incorporation of Fe2+ caused low influence on the band gap of the films and on their morphological-structural properties. In the film obtained from the deposition bath composed of 5% Fe, it presented a similar photocurrent to the non-doped film, however, with carrier density in an order of magnitude three times higher, i.e., 1,0 x 10^19 cm-3, showing an important characteristic for a high efficiency and fill factor in the case a photovoltaic device was installed.
publishDate 2017
dc.date.issued.fl_str_mv 2017-12-05
dc.date.accessioned.fl_str_mv 2018-05-07T19:44:51Z
dc.date.available.fl_str_mv 2018-05-07T19:44:51Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/masterThesis
format masterThesis
status_str publishedVersion
dc.identifier.citation.fl_str_mv COSTA, Magno Barcelos. Síntese eletroquímica e caracterização de filmes finos de Sb2Se3. 2017. Dissertação (Mestrado em Química) – Universidade Federal de São Carlos, São Carlos, 2017. Disponível em: https://repositorio.ufscar.br/handle/ufscar/9885.
dc.identifier.uri.fl_str_mv https://repositorio.ufscar.br/handle/ufscar/9885
identifier_str_mv COSTA, Magno Barcelos. Síntese eletroquímica e caracterização de filmes finos de Sb2Se3. 2017. Dissertação (Mestrado em Química) – Universidade Federal de São Carlos, São Carlos, 2017. Disponível em: https://repositorio.ufscar.br/handle/ufscar/9885.
url https://repositorio.ufscar.br/handle/ufscar/9885
dc.language.iso.fl_str_mv por
language por
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Universidade Federal de São Carlos
Câmpus São Carlos
dc.publisher.program.fl_str_mv Programa de Pós-Graduação em Química - PPGQ
dc.publisher.initials.fl_str_mv UFSCar
publisher.none.fl_str_mv Universidade Federal de São Carlos
Câmpus São Carlos
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFSCAR
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:UFSCAR
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str UFSCAR
institution UFSCAR
reponame_str Repositório Institucional da UFSCAR
collection Repositório Institucional da UFSCAR
bitstream.url.fl_str_mv https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/1/Disserta%c3%a7%c3%a3o%20final%202.pdf
https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/2/Carta%20da%20vers%c3%a3o%20final%20da%20disserta%c3%a7%c3%a3o.jpg
https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/3/license.txt
https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/4/Disserta%c3%a7%c3%a3o%20final%202.pdf.txt
https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/5/Carta%20da%20vers%c3%a3o%20final%20da%20disserta%c3%a7%c3%a3o.jpg.jpg
https://{{ getenv "DSPACE_HOST" "repositorio.ufscar.br" }}/bitstream/ufscar/9885/6/Disserta%c3%a7%c3%a3o%20final%202.pdf.jpg
bitstream.checksum.fl_str_mv a3c1f38bdff573c2400be4c1a825951a
7ecb6e0745770a925ef70683753d6a18
ae0398b6f8b235e40ad82cba6c50031d
e586e9b79be83106ee76b19039ae8851
bbd2a48fd0e8c64bdadc82cbd81e8803
98f7f2d35ea7ab258d1643ad8a88643c
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv
_version_ 1777472093060857856