Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Tipo de documento: | Dissertação |
Idioma: | por |
Título da fonte: | Biblioteca Digital de Teses e Dissertações do UFSM |
Texto Completo: | http://repositorio.ufsm.br/handle/1/13325 |
Resumo: | This dissertation presents a comparative study about the performance of silicon (Si) and gallium nitride (GaN) semiconductors in drivers for light emitting diodes. Hereby, it is expected to provide the theoretical background required for the development of future works using this new technology. Theoretical aspects related to the materials used in the manufacture of semiconductors and their implications in the final product, as well as the characteristics and peculiarities of GaN semiconductors are presented. The experimental development consisted of two case studies, each focused on a distinct topology with different types of GaN semiconductors. First, a comparison of Si and enhancement mode GaN transistors was carried out in a family of synchronous buck converters. Ten 48 V to 28.3 V and 22.6 W converters were designed with the same parameters, at five different switching frequencies, ranging from 100 kHz to 1 MHz. Efficiency and temperatures were measured in four different scenarios: with and without an external diode in parallel with the low-side switch and with two different dead-time values, 25 ns and 50 ns. Converters with GaN transistors showed higher efficiency and lower temperatures in all cases, with a maximum efficiency of 96.8% and a minimum of 94.5%. In addition, Si-based converters exhibited greater performance degradation as the switching frequency and dead time increased. In the second study, nine 75 W off-line integrated double buck-boost converters were developed and evaluated. Two different Si technologies were compared with a cascode GaN transistor at three switching frequencies, ranging from 50 to 150 kHz. Again, the efficiency and temperatures of the prototypes were measured. The converters with GaN demonstrated superior performance in all cases, yielding about 5% gain in efficiency over the worst tested Si semiconductor. In both cases, the converters’ loss distribution was presented based on simulation results. It was concluded that the gallium nitride transistors have the potential to replace silicon technology mainly due to its superior performance and requirement of small, or no change, in the original circuit. |
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2018-06-08T15:27:34Z2018-06-08T15:27:34Z2017-03-03http://repositorio.ufsm.br/handle/1/13325This dissertation presents a comparative study about the performance of silicon (Si) and gallium nitride (GaN) semiconductors in drivers for light emitting diodes. Hereby, it is expected to provide the theoretical background required for the development of future works using this new technology. Theoretical aspects related to the materials used in the manufacture of semiconductors and their implications in the final product, as well as the characteristics and peculiarities of GaN semiconductors are presented. The experimental development consisted of two case studies, each focused on a distinct topology with different types of GaN semiconductors. First, a comparison of Si and enhancement mode GaN transistors was carried out in a family of synchronous buck converters. Ten 48 V to 28.3 V and 22.6 W converters were designed with the same parameters, at five different switching frequencies, ranging from 100 kHz to 1 MHz. Efficiency and temperatures were measured in four different scenarios: with and without an external diode in parallel with the low-side switch and with two different dead-time values, 25 ns and 50 ns. Converters with GaN transistors showed higher efficiency and lower temperatures in all cases, with a maximum efficiency of 96.8% and a minimum of 94.5%. In addition, Si-based converters exhibited greater performance degradation as the switching frequency and dead time increased. In the second study, nine 75 W off-line integrated double buck-boost converters were developed and evaluated. Two different Si technologies were compared with a cascode GaN transistor at three switching frequencies, ranging from 50 to 150 kHz. Again, the efficiency and temperatures of the prototypes were measured. The converters with GaN demonstrated superior performance in all cases, yielding about 5% gain in efficiency over the worst tested Si semiconductor. In both cases, the converters’ loss distribution was presented based on simulation results. It was concluded that the gallium nitride transistors have the potential to replace silicon technology mainly due to its superior performance and requirement of small, or no change, in the original circuit.A presente dissertação apresenta um estudo comparativo do desempenho de semicondutores de silício (Si) e nitreto de gálio (GaN) em circuitos utilizados na alimentação de diodos emissores de luz. Por meio deste, procura-se fornecer o embasamento teórico necessário para o desenvolvimento de trabalhos futuros utilizando esta nova tecnologia. São apresentados, inicialmente, aspectos teóricos relacionados aos materiais utilizados na fabricação de semicondutores e suas implicações no produto final, além das características e peculiaridades dos semicondutores GaN. O desenvolvimento experimental consistiu de dois estudos de caso, cada um focado em uma topologia distinta com tipos de semicondutores GaN diferentes. Primeiramente, realizou-se um comparativo de transistores Si e GaN do tipo intensificação em uma família de conversores buck síncronos. Dez conversores 48 V para 28,3 V e 22,6 W foram projetados, com os mesmos parâmetros, em cinco diferentes frequências de comutação, variando de 100 kHz a 1 MHz. Eficiência e temperaturas foram medidas em quatro diferentes cenários: com e sem um diodo externo em paralelo com o interruptor de roda-livre e com dois valores diferentes de tempo morto, 25 ns e 50 ns. Os conversores com transistores GaN apresentaram maior eficiência e menores temperaturas em todos os casos, com uma eficiência máxima de 96,8% e uma mínima de 94,5%. Além disso, os conversores com Si exibiram uma maior degradação de desempenho à medida que a frequência de comutação e o tempo morto aumentam. No segundo estudo, nove conversores duplo buck-boost integrados de 75 W com alimentação a partir da rede elétrica foram desenvolvidos e avaliados. Compararam-se duas tecnologias distintas de interruptores de Si com um transistor GaN do tipo cascode, em três frequências de comutação, variando de 50 a 150 kHz. Novamente, mediu-se a eficiência e temperaturas dos protótipos. Os conversores com GaN demonstraram desempenho superior em todos os casos, com um ganho de cerca de 5% no rendimento em relação ao pior semicondutor Si testado. Em ambos os estudos de caso, a distribuição de perdas dos conversores foi apresentada com base em resultados de simulação. Concluiu-se que os transistores de nitreto de gálio têm potencial para substituir a tecnologia de silício utilizada atualmente devido, principalmente, a seu desempenho superior e exigência de pouca, ou nenhuma, mudança no circuito original.porUniversidade Federal de Santa MariaCentro de TecnologiaPrograma de Pós-Graduação em Engenharia ElétricaUFSMBrasilEngenharia ElétricaAttribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessTransistor de Nitreto de GálioGaNGaN HEMTLED driverGallium nitride transistorCNPQ::ENGENHARIAS::ENGENHARIA ELETRICAEstudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de ledsComparative study between silicon and gallium nitride semiconductors in led driversinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisDalla Costa, Marco Antôniohttp://lattes.cnpq.br/4455422053321491Seidel, Alysson Ranierehttp://lattes.cnpq.br/5764635299335289Kirsten, André Luishttp://lattes.cnpq.br/3559083413253401http://lattes.cnpq.br/3864761697400948Duarte, Renan Rodrigo3004000000076004e82ca7f-4cee-4e8a-9019-64e291cdf7cd03cc4e1b-bf7c-4751-b5a1-06dc6b7ec1a3d0f94572-f37f-4c29-a681-fefaeb1d0529ca6f5c07-d3de-4ced-b9d6-f36067f3c5a9reponame:Biblioteca Digital de Teses e Dissertações do UFSMinstname:Universidade Federal de Santa Maria (UFSM)instacron:UFSMORIGINALDIS_PPGEE_2017_DUARTE_RENAN.pdfDIS_PPGEE_2017_DUARTE_RENAN.pdfDissertação de Mestradoapplication/pdf5974362http://repositorio.ufsm.br/bitstream/1/13325/1/DIS_PPGEE_2017_DUARTE_RENAN.pdfa26b94def9e8e50c209b5303857322d3MD51CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; 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dc.title.por.fl_str_mv |
Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds |
dc.title.alternative.eng.fl_str_mv |
Comparative study between silicon and gallium nitride semiconductors in led drivers |
title |
Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds |
spellingShingle |
Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds Duarte, Renan Rodrigo Transistor de Nitreto de Gálio GaN GaN HEMT LED driver Gallium nitride transistor CNPQ::ENGENHARIAS::ENGENHARIA ELETRICA |
title_short |
Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds |
title_full |
Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds |
title_fullStr |
Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds |
title_full_unstemmed |
Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds |
title_sort |
Estudo comparativo entre semicondutores de silício e nitreto de gálio em circuitos de acionamento de leds |
author |
Duarte, Renan Rodrigo |
author_facet |
Duarte, Renan Rodrigo |
author_role |
author |
dc.contributor.advisor1.fl_str_mv |
Dalla Costa, Marco Antônio |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/4455422053321491 |
dc.contributor.referee1.fl_str_mv |
Seidel, Alysson Raniere |
dc.contributor.referee1Lattes.fl_str_mv |
http://lattes.cnpq.br/5764635299335289 |
dc.contributor.referee2.fl_str_mv |
Kirsten, André Luis |
dc.contributor.referee2Lattes.fl_str_mv |
http://lattes.cnpq.br/3559083413253401 |
dc.contributor.authorLattes.fl_str_mv |
http://lattes.cnpq.br/3864761697400948 |
dc.contributor.author.fl_str_mv |
Duarte, Renan Rodrigo |
contributor_str_mv |
Dalla Costa, Marco Antônio Seidel, Alysson Raniere Kirsten, André Luis |
dc.subject.por.fl_str_mv |
Transistor de Nitreto de Gálio GaN GaN HEMT LED driver |
topic |
Transistor de Nitreto de Gálio GaN GaN HEMT LED driver Gallium nitride transistor CNPQ::ENGENHARIAS::ENGENHARIA ELETRICA |
dc.subject.eng.fl_str_mv |
Gallium nitride transistor |
dc.subject.cnpq.fl_str_mv |
CNPQ::ENGENHARIAS::ENGENHARIA ELETRICA |
description |
This dissertation presents a comparative study about the performance of silicon (Si) and gallium nitride (GaN) semiconductors in drivers for light emitting diodes. Hereby, it is expected to provide the theoretical background required for the development of future works using this new technology. Theoretical aspects related to the materials used in the manufacture of semiconductors and their implications in the final product, as well as the characteristics and peculiarities of GaN semiconductors are presented. The experimental development consisted of two case studies, each focused on a distinct topology with different types of GaN semiconductors. First, a comparison of Si and enhancement mode GaN transistors was carried out in a family of synchronous buck converters. Ten 48 V to 28.3 V and 22.6 W converters were designed with the same parameters, at five different switching frequencies, ranging from 100 kHz to 1 MHz. Efficiency and temperatures were measured in four different scenarios: with and without an external diode in parallel with the low-side switch and with two different dead-time values, 25 ns and 50 ns. Converters with GaN transistors showed higher efficiency and lower temperatures in all cases, with a maximum efficiency of 96.8% and a minimum of 94.5%. In addition, Si-based converters exhibited greater performance degradation as the switching frequency and dead time increased. In the second study, nine 75 W off-line integrated double buck-boost converters were developed and evaluated. Two different Si technologies were compared with a cascode GaN transistor at three switching frequencies, ranging from 50 to 150 kHz. Again, the efficiency and temperatures of the prototypes were measured. The converters with GaN demonstrated superior performance in all cases, yielding about 5% gain in efficiency over the worst tested Si semiconductor. In both cases, the converters’ loss distribution was presented based on simulation results. It was concluded that the gallium nitride transistors have the potential to replace silicon technology mainly due to its superior performance and requirement of small, or no change, in the original circuit. |
publishDate |
2017 |
dc.date.issued.fl_str_mv |
2017-03-03 |
dc.date.accessioned.fl_str_mv |
2018-06-08T15:27:34Z |
dc.date.available.fl_str_mv |
2018-06-08T15:27:34Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/masterThesis |
format |
masterThesis |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://repositorio.ufsm.br/handle/1/13325 |
url |
http://repositorio.ufsm.br/handle/1/13325 |
dc.language.iso.fl_str_mv |
por |
language |
por |
dc.relation.cnpq.fl_str_mv |
300400000007 |
dc.relation.confidence.fl_str_mv |
600 |
dc.relation.authority.fl_str_mv |
4e82ca7f-4cee-4e8a-9019-64e291cdf7cd 03cc4e1b-bf7c-4751-b5a1-06dc6b7ec1a3 d0f94572-f37f-4c29-a681-fefaeb1d0529 ca6f5c07-d3de-4ced-b9d6-f36067f3c5a9 |
dc.rights.driver.fl_str_mv |
Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ info:eu-repo/semantics/openAccess |
rights_invalid_str_mv |
Attribution-NonCommercial-NoDerivatives 4.0 International http://creativecommons.org/licenses/by-nc-nd/4.0/ |
eu_rights_str_mv |
openAccess |
dc.publisher.none.fl_str_mv |
Universidade Federal de Santa Maria Centro de Tecnologia |
dc.publisher.program.fl_str_mv |
Programa de Pós-Graduação em Engenharia Elétrica |
dc.publisher.initials.fl_str_mv |
UFSM |
dc.publisher.country.fl_str_mv |
Brasil |
dc.publisher.department.fl_str_mv |
Engenharia Elétrica |
publisher.none.fl_str_mv |
Universidade Federal de Santa Maria Centro de Tecnologia |
dc.source.none.fl_str_mv |
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