Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | LOCUS Repositório Institucional da UFV |
Texto Completo: | https://doi.org/10.1007/s10854-018-9018-z http://www.locus.ufv.br/handle/123456789/22091 |
Resumo: | We analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average crystallite size increased from15.30 ± 0.73 nm to 16.71 ± 012 nm, when Co content is increased from 1 to 4%. Enhancement of dopants (Mn, Co) introduced more and more oxygen vacancies to ZnO lattice confirmed from EDX and XPS. The high-temperature annealing leads to reduction of the dielectric properties due to enhancement in grain growth (large grain volume and lesser number of grain boundaries) with the incorporation of Co and Mn ions into the ZnO lattice. The electrical conductivity of the Mn doped and (Mn, Co) co-doped ZnO samples were enhanced due to increase in the volume of conducting grains and charge density (liberation of trapped charge carriers in oxygen vacancies and free charge carriers at higher frequencies). The Mn-doped and (Mn, Co) co-doped ZnO NPs show ferromagnetic (FM) behaviour. The saturation and remnant magnetizations (Ms and Mr) elevates from (0.235 to 1.489) × 10−2 and (0.12 to 0.27) × 10−2 emu/g while Coercivity (Hc) reduced from 97 to 36 Oe with enhancement in the concentration of dopants in ZnO matrix. Oxygen vacancies were found to be the main reason for room-temperature ferromagnetism (RTFM) in the doped and co-doped ZnO NPs. The results show that the enhanced dielectric and magnetic properties of Mn doped and (Mn, Co) co-doped ZnO is strongly correlated with the concentration of oxygen vacancies. The observed enhanced RTFM, dielectric properties and electrical conductivity makes TM doped ZnO nanoparticles suitable for spintronics, microelectronics and optoelectronics based applications. |
id |
UFV_ce76a440ce5eeb2143dbf3ce95b57f7e |
---|---|
oai_identifier_str |
oai:locus.ufv.br:123456789/22091 |
network_acronym_str |
UFV |
network_name_str |
LOCUS Repositório Institucional da UFV |
repository_id_str |
2145 |
spelling |
Araujo, Clodoaldo Irineu Levartoski deKhan, RajwaliZulfiqarKhan, TahirzebRahman, Muneeb UrRehman, Zia UrKhan, AurangzebUllah, BurhanFashu, Simbarashe2018-10-01T12:03:15Z2018-10-01T12:03:15Z2018-061573-482Xhttps://doi.org/10.1007/s10854-018-9018-zhttp://www.locus.ufv.br/handle/123456789/22091We analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average crystallite size increased from15.30 ± 0.73 nm to 16.71 ± 012 nm, when Co content is increased from 1 to 4%. Enhancement of dopants (Mn, Co) introduced more and more oxygen vacancies to ZnO lattice confirmed from EDX and XPS. The high-temperature annealing leads to reduction of the dielectric properties due to enhancement in grain growth (large grain volume and lesser number of grain boundaries) with the incorporation of Co and Mn ions into the ZnO lattice. The electrical conductivity of the Mn doped and (Mn, Co) co-doped ZnO samples were enhanced due to increase in the volume of conducting grains and charge density (liberation of trapped charge carriers in oxygen vacancies and free charge carriers at higher frequencies). The Mn-doped and (Mn, Co) co-doped ZnO NPs show ferromagnetic (FM) behaviour. The saturation and remnant magnetizations (Ms and Mr) elevates from (0.235 to 1.489) × 10−2 and (0.12 to 0.27) × 10−2 emu/g while Coercivity (Hc) reduced from 97 to 36 Oe with enhancement in the concentration of dopants in ZnO matrix. Oxygen vacancies were found to be the main reason for room-temperature ferromagnetism (RTFM) in the doped and co-doped ZnO NPs. The results show that the enhanced dielectric and magnetic properties of Mn doped and (Mn, Co) co-doped ZnO is strongly correlated with the concentration of oxygen vacancies. The observed enhanced RTFM, dielectric properties and electrical conductivity makes TM doped ZnO nanoparticles suitable for spintronics, microelectronics and optoelectronics based applications.engJournal of Materials Science: Materials in ElectronicsVolume 29, Issue 12, p. 9785–9795, June 2018Springer USinfo:eu-repo/semantics/openAccessOxygen vacanciesStructuralDielectricMagnetic properties(Mn, Co) co-doped ZnO nanostructuresInfluence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructuresinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfreponame:LOCUS Repositório Institucional da UFVinstname:Universidade Federal de Viçosa (UFV)instacron:UFVORIGINALartigo.pdfartigo.pdfTexto completoapplication/pdf2736162https://locus.ufv.br//bitstream/123456789/22091/1/artigo.pdf6de53c6f1942caf124712245eba28575MD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748https://locus.ufv.br//bitstream/123456789/22091/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52THUMBNAILartigo.pdf.jpgartigo.pdf.jpgIM Thumbnailimage/jpeg4644https://locus.ufv.br//bitstream/123456789/22091/3/artigo.pdf.jpgc42e84c26916634b9ff37eac1f09c79cMD53123456789/220912018-10-01 23:00:43.363oai:locus.ufv.br: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Repositório InstitucionalPUBhttps://www.locus.ufv.br/oai/requestfabiojreis@ufv.bropendoar:21452018-10-02T02:00:43LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV)false |
dc.title.en.fl_str_mv |
Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures |
title |
Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures |
spellingShingle |
Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures Araujo, Clodoaldo Irineu Levartoski de Oxygen vacancies Structural Dielectric Magnetic properties (Mn, Co) co-doped ZnO nanostructures |
title_short |
Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures |
title_full |
Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures |
title_fullStr |
Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures |
title_full_unstemmed |
Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures |
title_sort |
Influence of oxygen vacancies on the structural, dielectric, and magnetic properties of (Mn, Co) co-doped ZnO nanostructures |
author |
Araujo, Clodoaldo Irineu Levartoski de |
author_facet |
Araujo, Clodoaldo Irineu Levartoski de Khan, Rajwali Zulfiqar Khan, Tahirzeb Rahman, Muneeb Ur Rehman, Zia Ur Khan, Aurangzeb Ullah, Burhan Fashu, Simbarashe |
author_role |
author |
author2 |
Khan, Rajwali Zulfiqar Khan, Tahirzeb Rahman, Muneeb Ur Rehman, Zia Ur Khan, Aurangzeb Ullah, Burhan Fashu, Simbarashe |
author2_role |
author author author author author author author author |
dc.contributor.author.fl_str_mv |
Araujo, Clodoaldo Irineu Levartoski de Khan, Rajwali Zulfiqar Khan, Tahirzeb Rahman, Muneeb Ur Rehman, Zia Ur Khan, Aurangzeb Ullah, Burhan Fashu, Simbarashe |
dc.subject.pt-BR.fl_str_mv |
Oxygen vacancies Structural Dielectric Magnetic properties (Mn, Co) co-doped ZnO nanostructures |
topic |
Oxygen vacancies Structural Dielectric Magnetic properties (Mn, Co) co-doped ZnO nanostructures |
description |
We analysed the variation and effect of oxygen vacancies on the structural, dielectric and magnetic properties in case of Mn (4%) and Co (1, 2 and 4%) co-doped ZnO nanoparticles (NPs), synthesized by chemical precipitation route and annealed at 750 °C for 2 h. From the XRD, the calculated average crystallite size increased from15.30 ± 0.73 nm to 16.71 ± 012 nm, when Co content is increased from 1 to 4%. Enhancement of dopants (Mn, Co) introduced more and more oxygen vacancies to ZnO lattice confirmed from EDX and XPS. The high-temperature annealing leads to reduction of the dielectric properties due to enhancement in grain growth (large grain volume and lesser number of grain boundaries) with the incorporation of Co and Mn ions into the ZnO lattice. The electrical conductivity of the Mn doped and (Mn, Co) co-doped ZnO samples were enhanced due to increase in the volume of conducting grains and charge density (liberation of trapped charge carriers in oxygen vacancies and free charge carriers at higher frequencies). The Mn-doped and (Mn, Co) co-doped ZnO NPs show ferromagnetic (FM) behaviour. The saturation and remnant magnetizations (Ms and Mr) elevates from (0.235 to 1.489) × 10−2 and (0.12 to 0.27) × 10−2 emu/g while Coercivity (Hc) reduced from 97 to 36 Oe with enhancement in the concentration of dopants in ZnO matrix. Oxygen vacancies were found to be the main reason for room-temperature ferromagnetism (RTFM) in the doped and co-doped ZnO NPs. The results show that the enhanced dielectric and magnetic properties of Mn doped and (Mn, Co) co-doped ZnO is strongly correlated with the concentration of oxygen vacancies. The observed enhanced RTFM, dielectric properties and electrical conductivity makes TM doped ZnO nanoparticles suitable for spintronics, microelectronics and optoelectronics based applications. |
publishDate |
2018 |
dc.date.accessioned.fl_str_mv |
2018-10-01T12:03:15Z |
dc.date.available.fl_str_mv |
2018-10-01T12:03:15Z |
dc.date.issued.fl_str_mv |
2018-06 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://doi.org/10.1007/s10854-018-9018-z http://www.locus.ufv.br/handle/123456789/22091 |
dc.identifier.issn.none.fl_str_mv |
1573-482X |
identifier_str_mv |
1573-482X |
url |
https://doi.org/10.1007/s10854-018-9018-z http://www.locus.ufv.br/handle/123456789/22091 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartofseries.pt-BR.fl_str_mv |
Volume 29, Issue 12, p. 9785–9795, June 2018 |
dc.rights.driver.fl_str_mv |
Springer US info:eu-repo/semantics/openAccess |
rights_invalid_str_mv |
Springer US |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Journal of Materials Science: Materials in Electronics |
publisher.none.fl_str_mv |
Journal of Materials Science: Materials in Electronics |
dc.source.none.fl_str_mv |
reponame:LOCUS Repositório Institucional da UFV instname:Universidade Federal de Viçosa (UFV) instacron:UFV |
instname_str |
Universidade Federal de Viçosa (UFV) |
instacron_str |
UFV |
institution |
UFV |
reponame_str |
LOCUS Repositório Institucional da UFV |
collection |
LOCUS Repositório Institucional da UFV |
bitstream.url.fl_str_mv |
https://locus.ufv.br//bitstream/123456789/22091/1/artigo.pdf https://locus.ufv.br//bitstream/123456789/22091/2/license.txt https://locus.ufv.br//bitstream/123456789/22091/3/artigo.pdf.jpg |
bitstream.checksum.fl_str_mv |
6de53c6f1942caf124712245eba28575 8a4605be74aa9ea9d79846c1fba20a33 c42e84c26916634b9ff37eac1f09c79c |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 MD5 |
repository.name.fl_str_mv |
LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV) |
repository.mail.fl_str_mv |
fabiojreis@ufv.br |
_version_ |
1794528167495467008 |