Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000400217 |
Resumo: | Abstract The aim of this study was to investigate the influence of the cutting parameters on monocrystalline silicon cut by diamond wire sawing. The sawn surface was analyzed in terms of surface morphology, surface roughness, material removal mechanism and residual stress (by Raman spectroscopy). The surface morphology exhibited evidence of both material removal mechanisms: the brittle mode and the ductile mode. The surface roughness increased with a high vf, which promoted the formation of craters on the sawn surface. On applying a higher vc, the surface roughness reduced, since this favored the formation of damage-free grooves. The Raman spectrum showed evidence of different residual crystalline phases on the sawn surface, which confirms the material removal mechanisms. An increase in vf, for the same vc, caused at reduction in the compressive stress, since the brittle mode predominated as the material removal mechanism. Maintaining vf constant and increasing vc results in higher compressive stress, caused by plastic deformation of the silicon during chip formation. |
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Materials research (São Carlos. Online) |
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Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire SawingDiamond wire sawingMonocrystalline siliconBrittle-to-ductile transitionResidual stressPhase transformationAbstract The aim of this study was to investigate the influence of the cutting parameters on monocrystalline silicon cut by diamond wire sawing. The sawn surface was analyzed in terms of surface morphology, surface roughness, material removal mechanism and residual stress (by Raman spectroscopy). The surface morphology exhibited evidence of both material removal mechanisms: the brittle mode and the ductile mode. The surface roughness increased with a high vf, which promoted the formation of craters on the sawn surface. On applying a higher vc, the surface roughness reduced, since this favored the formation of damage-free grooves. The Raman spectrum showed evidence of different residual crystalline phases on the sawn surface, which confirms the material removal mechanisms. An increase in vf, for the same vc, caused at reduction in the compressive stress, since the brittle mode predominated as the material removal mechanism. Maintaining vf constant and increasing vc results in higher compressive stress, caused by plastic deformation of the silicon during chip formation.ABM, ABC, ABPol2020-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000400217Materials Research v.23 n.4 2020reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1980-5373-mr-2020-0013info:eu-repo/semantics/openAccessCosta,Erick CardosoSantos,Caroline Piesanti dosXavier,Fabio AntonioWeingaertner,Walter Lindolfoeng2020-08-24T00:00:00Zoai:scielo:S1516-14392020000400217Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2020-08-24T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing |
title |
Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing |
spellingShingle |
Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing Costa,Erick Cardoso Diamond wire sawing Monocrystalline silicon Brittle-to-ductile transition Residual stress Phase transformation |
title_short |
Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing |
title_full |
Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing |
title_fullStr |
Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing |
title_full_unstemmed |
Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing |
title_sort |
Experimental Investigation of the Sawn Surface of Monocrystalline Silicon Cut by Endless Diamond Wire Sawing |
author |
Costa,Erick Cardoso |
author_facet |
Costa,Erick Cardoso Santos,Caroline Piesanti dos Xavier,Fabio Antonio Weingaertner,Walter Lindolfo |
author_role |
author |
author2 |
Santos,Caroline Piesanti dos Xavier,Fabio Antonio Weingaertner,Walter Lindolfo |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Costa,Erick Cardoso Santos,Caroline Piesanti dos Xavier,Fabio Antonio Weingaertner,Walter Lindolfo |
dc.subject.por.fl_str_mv |
Diamond wire sawing Monocrystalline silicon Brittle-to-ductile transition Residual stress Phase transformation |
topic |
Diamond wire sawing Monocrystalline silicon Brittle-to-ductile transition Residual stress Phase transformation |
description |
Abstract The aim of this study was to investigate the influence of the cutting parameters on monocrystalline silicon cut by diamond wire sawing. The sawn surface was analyzed in terms of surface morphology, surface roughness, material removal mechanism and residual stress (by Raman spectroscopy). The surface morphology exhibited evidence of both material removal mechanisms: the brittle mode and the ductile mode. The surface roughness increased with a high vf, which promoted the formation of craters on the sawn surface. On applying a higher vc, the surface roughness reduced, since this favored the formation of damage-free grooves. The Raman spectrum showed evidence of different residual crystalline phases on the sawn surface, which confirms the material removal mechanisms. An increase in vf, for the same vc, caused at reduction in the compressive stress, since the brittle mode predominated as the material removal mechanism. Maintaining vf constant and increasing vc results in higher compressive stress, caused by plastic deformation of the silicon during chip formation. |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-01-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000400217 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392020000400217 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/1980-5373-mr-2020-0013 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.23 n.4 2020 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212677423464448 |