Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
Autor(a) principal: | |
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Data de Publicação: | 2015 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.1/11541 |
Resumo: | In this study, we report solution-processed amorphous zinc tin oxide transistors exhibiting high operational stability under positive gate bias stress, translated by a recoverable threshold voltage shift of about 20% of total applied stress voltage. Under vacuum condition, the threshold voltage shift saturates showing that the gate-bias stress is limited by trap exhaustion or balance between trap filling and emptying mechanism. In ambient atmosphere, the threshold voltage shift no longer saturates, stability is degraded and the recovering process is impeded. We suggest that the trapping time during the stress and detrapping time in recovering are affected by oxygen adsorption/desorption processes. The time constants extracted from stretched exponential fitting curves are approximate to 10(6) s and 10(5) s in vacuum and air, respectively. (C) 2015 Author(s). |
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Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stressIn this study, we report solution-processed amorphous zinc tin oxide transistors exhibiting high operational stability under positive gate bias stress, translated by a recoverable threshold voltage shift of about 20% of total applied stress voltage. Under vacuum condition, the threshold voltage shift saturates showing that the gate-bias stress is limited by trap exhaustion or balance between trap filling and emptying mechanism. In ambient atmosphere, the threshold voltage shift no longer saturates, stability is degraded and the recovering process is impeded. We suggest that the trapping time during the stress and detrapping time in recovering are affected by oxygen adsorption/desorption processes. The time constants extracted from stretched exponential fitting curves are approximate to 10(6) s and 10(5) s in vacuum and air, respectively. (C) 2015 Author(s).FEDER through COMPETE 2020 Programme; European Communities 7th Framework Programme (i-FLEXIS project) [ICT-2013-10-611070]; National Funds through FCT-Portuguese Foundation for Science and Technology [UID/CTM/50025/2013, EXCL/CTM-NAN/0201/2012]Amer Inst PhysicsSapientiaKiazadeh, AsalSalgueiro, DanielaBranquinho, RitaPinto, JoanaGomes, Henrique L.Barquinha, PedroMartins, RodrigoFortunato, Elvira2018-12-07T14:53:29Z2015-062015-06-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/11541eng2166-532X10.1063/1.4919057info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:23:22Zoai:sapientia.ualg.pt:10400.1/11541Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T20:03:02.091899Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress |
title |
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress |
spellingShingle |
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress Kiazadeh, Asal |
title_short |
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress |
title_full |
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress |
title_fullStr |
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress |
title_full_unstemmed |
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress |
title_sort |
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress |
author |
Kiazadeh, Asal |
author_facet |
Kiazadeh, Asal Salgueiro, Daniela Branquinho, Rita Pinto, Joana Gomes, Henrique L. Barquinha, Pedro Martins, Rodrigo Fortunato, Elvira |
author_role |
author |
author2 |
Salgueiro, Daniela Branquinho, Rita Pinto, Joana Gomes, Henrique L. Barquinha, Pedro Martins, Rodrigo Fortunato, Elvira |
author2_role |
author author author author author author author |
dc.contributor.none.fl_str_mv |
Sapientia |
dc.contributor.author.fl_str_mv |
Kiazadeh, Asal Salgueiro, Daniela Branquinho, Rita Pinto, Joana Gomes, Henrique L. Barquinha, Pedro Martins, Rodrigo Fortunato, Elvira |
description |
In this study, we report solution-processed amorphous zinc tin oxide transistors exhibiting high operational stability under positive gate bias stress, translated by a recoverable threshold voltage shift of about 20% of total applied stress voltage. Under vacuum condition, the threshold voltage shift saturates showing that the gate-bias stress is limited by trap exhaustion or balance between trap filling and emptying mechanism. In ambient atmosphere, the threshold voltage shift no longer saturates, stability is degraded and the recovering process is impeded. We suggest that the trapping time during the stress and detrapping time in recovering are affected by oxygen adsorption/desorption processes. The time constants extracted from stretched exponential fitting curves are approximate to 10(6) s and 10(5) s in vacuum and air, respectively. (C) 2015 Author(s). |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015-06 2015-06-01T00:00:00Z 2018-12-07T14:53:29Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.1/11541 |
url |
http://hdl.handle.net/10400.1/11541 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2166-532X 10.1063/1.4919057 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Amer Inst Physics |
publisher.none.fl_str_mv |
Amer Inst Physics |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799133264394321920 |