High-k oxides
Autor(a) principal: | |
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Data de Publicação: | 2013 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.8/1430 |
Resumo: | Due to the need of increasing the gate capacitance of metal-oxide-semiconductor (MOS) devices, the layer thickness of the SiO2 gate dielectric is reducing to such thickness that the leakage current is becoming too large to control. Suitable high-oxides hence need to be found in order to replace the existing gate dielectric, because the thicker layer of the oxide contender may exponentially decrease the tunnelling currents, while achieving the same level of capacitance as the actual devices of SiO2. |
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High-k oxidesDue to the need of increasing the gate capacitance of metal-oxide-semiconductor (MOS) devices, the layer thickness of the SiO2 gate dielectric is reducing to such thickness that the leakage current is becoming too large to control. Suitable high-oxides hence need to be found in order to replace the existing gate dielectric, because the thicker layer of the oxide contender may exponentially decrease the tunnelling currents, while achieving the same level of capacitance as the actual devices of SiO2.CDRSP-IPLeiriaIC-OnlineSilva, E. L.Santos, M. C.2015-11-23T15:31:32Z20132013-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.8/1430eng2183-6000info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-01-17T15:43:03Zoai:iconline.ipleiria.pt:10400.8/1430Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T01:46:03.986583Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
High-k oxides |
title |
High-k oxides |
spellingShingle |
High-k oxides Silva, E. L. |
title_short |
High-k oxides |
title_full |
High-k oxides |
title_fullStr |
High-k oxides |
title_full_unstemmed |
High-k oxides |
title_sort |
High-k oxides |
author |
Silva, E. L. |
author_facet |
Silva, E. L. Santos, M. C. |
author_role |
author |
author2 |
Santos, M. C. |
author2_role |
author |
dc.contributor.none.fl_str_mv |
IC-Online |
dc.contributor.author.fl_str_mv |
Silva, E. L. Santos, M. C. |
description |
Due to the need of increasing the gate capacitance of metal-oxide-semiconductor (MOS) devices, the layer thickness of the SiO2 gate dielectric is reducing to such thickness that the leakage current is becoming too large to control. Suitable high-oxides hence need to be found in order to replace the existing gate dielectric, because the thicker layer of the oxide contender may exponentially decrease the tunnelling currents, while achieving the same level of capacitance as the actual devices of SiO2. |
publishDate |
2013 |
dc.date.none.fl_str_mv |
2013 2013-01-01T00:00:00Z 2015-11-23T15:31:32Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.8/1430 |
url |
http://hdl.handle.net/10400.8/1430 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2183-6000 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
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openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
CDRSP-IPLeiria |
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CDRSP-IPLeiria |
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reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799136956746039296 |