Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
Autor(a) principal: | |
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Data de Publicação: | 2015 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/20611 |
Resumo: | Controlling ferroelectric switching in Mg doped lithium niobate (Mg: LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg: LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the \"up\" to the \"down\" state increases with increasing thickness in pure Mg: LN, whereas the voltage required for stable back switching to the original \"up\" state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg: LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg: LN layer above due to the presence of uncompensated polarization charge at the PE-Mg: LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg: LN via electromechanical coupling, which were corroborated with complimentary Raman measurements. (C) 2015 AIP Publishing LLC. |
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Interface and thickness dependent domain switching and stability in Mg doped lithium niobateEXCHANGED WAVE-GUIDESPIEZORESPONSE FORCE MICROSCOPYLINBO3 CRYSTALSRAMAN-SPECTROSCOPYSPECTRAFABRICATIONSCATTERINGINVERSIONPHONONSPHASESControlling ferroelectric switching in Mg doped lithium niobate (Mg: LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg: LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the \"up\" to the \"down\" state increases with increasing thickness in pure Mg: LN, whereas the voltage required for stable back switching to the original \"up\" state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg: LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg: LN layer above due to the presence of uncompensated polarization charge at the PE-Mg: LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg: LN via electromechanical coupling, which were corroborated with complimentary Raman measurements. (C) 2015 AIP Publishing LLC.AMER INST PHYSICS2017-12-07T19:53:17Z2015-01-01T00:00:00Z2015info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/20611eng0021-897910.1063/1.4936605Neumayer, Sabine M.Ivanov, Ilia N.Manzo, MicheleKholkin, Andrei L.Gallo, KatiaRodriguez, Brian J.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:40:31Zoai:ria.ua.pt:10773/20611Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:55:17.098779Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Interface and thickness dependent domain switching and stability in Mg doped lithium niobate |
title |
Interface and thickness dependent domain switching and stability in Mg doped lithium niobate |
spellingShingle |
Interface and thickness dependent domain switching and stability in Mg doped lithium niobate Neumayer, Sabine M. EXCHANGED WAVE-GUIDES PIEZORESPONSE FORCE MICROSCOPY LINBO3 CRYSTALS RAMAN-SPECTROSCOPY SPECTRA FABRICATION SCATTERING INVERSION PHONONS PHASES |
title_short |
Interface and thickness dependent domain switching and stability in Mg doped lithium niobate |
title_full |
Interface and thickness dependent domain switching and stability in Mg doped lithium niobate |
title_fullStr |
Interface and thickness dependent domain switching and stability in Mg doped lithium niobate |
title_full_unstemmed |
Interface and thickness dependent domain switching and stability in Mg doped lithium niobate |
title_sort |
Interface and thickness dependent domain switching and stability in Mg doped lithium niobate |
author |
Neumayer, Sabine M. |
author_facet |
Neumayer, Sabine M. Ivanov, Ilia N. Manzo, Michele Kholkin, Andrei L. Gallo, Katia Rodriguez, Brian J. |
author_role |
author |
author2 |
Ivanov, Ilia N. Manzo, Michele Kholkin, Andrei L. Gallo, Katia Rodriguez, Brian J. |
author2_role |
author author author author author |
dc.contributor.author.fl_str_mv |
Neumayer, Sabine M. Ivanov, Ilia N. Manzo, Michele Kholkin, Andrei L. Gallo, Katia Rodriguez, Brian J. |
dc.subject.por.fl_str_mv |
EXCHANGED WAVE-GUIDES PIEZORESPONSE FORCE MICROSCOPY LINBO3 CRYSTALS RAMAN-SPECTROSCOPY SPECTRA FABRICATION SCATTERING INVERSION PHONONS PHASES |
topic |
EXCHANGED WAVE-GUIDES PIEZORESPONSE FORCE MICROSCOPY LINBO3 CRYSTALS RAMAN-SPECTROSCOPY SPECTRA FABRICATION SCATTERING INVERSION PHONONS PHASES |
description |
Controlling ferroelectric switching in Mg doped lithium niobate (Mg: LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg: LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the \"up\" to the \"down\" state increases with increasing thickness in pure Mg: LN, whereas the voltage required for stable back switching to the original \"up\" state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg: LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg: LN layer above due to the presence of uncompensated polarization charge at the PE-Mg: LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg: LN via electromechanical coupling, which were corroborated with complimentary Raman measurements. (C) 2015 AIP Publishing LLC. |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015-01-01T00:00:00Z 2015 2017-12-07T19:53:17Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/20611 |
url |
http://hdl.handle.net/10773/20611 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0021-8979 10.1063/1.4936605 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
AMER INST PHYSICS |
publisher.none.fl_str_mv |
AMER INST PHYSICS |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799137606702727168 |