Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

Detalhes bibliográficos
Autor(a) principal: Meng Lijian
Data de Publicação: 2008
Outros Autores: Gao Jinsong, Silva, R. A., Song Shigeng
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/13698
Resumo: ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10−2 Pa at this oxygen flow).
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spelling Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)ITOThin filmsIon beam assisted depositionIR reflectanceOptical and electrical propertiesthin FilmScience & TechnologyITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10−2 Pa at this oxygen flow).Fundação para a Ciência e a Tecnologia (FCT) - SFRH-BSAB-514.ElsevierUniversidade do MinhoMeng LijianGao JinsongSilva, R. A.Song Shigeng2008-06-302008-06-30T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/13698eng0040-609010.1016/j.tsf.2007.07.071http://www.sciencedirect.com/science/article/pii/S0040609007012229info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:17:36Zoai:repositorium.sdum.uminho.pt:1822/13698Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:10:16.520500Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
title Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
spellingShingle Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
Meng Lijian
ITO
Thin films
Ion beam assisted deposition
IR reflectance
Optical and electrical properties
thin Film
Science & Technology
title_short Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
title_full Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
title_fullStr Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
title_full_unstemmed Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
title_sort Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)
author Meng Lijian
author_facet Meng Lijian
Gao Jinsong
Silva, R. A.
Song Shigeng
author_role author
author2 Gao Jinsong
Silva, R. A.
Song Shigeng
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Meng Lijian
Gao Jinsong
Silva, R. A.
Song Shigeng
dc.subject.por.fl_str_mv ITO
Thin films
Ion beam assisted deposition
IR reflectance
Optical and electrical properties
thin Film
Science & Technology
topic ITO
Thin films
Ion beam assisted deposition
IR reflectance
Optical and electrical properties
thin Film
Science & Technology
description ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10−2 Pa at this oxygen flow).
publishDate 2008
dc.date.none.fl_str_mv 2008-06-30
2008-06-30T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/13698
url http://hdl.handle.net/1822/13698
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0040-6090
10.1016/j.tsf.2007.07.071
http://www.sciencedirect.com/science/article/pii/S0040609007012229
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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