Thin-film transistors based on p-type Cu2O thin films produced at room temperature

Detalhes bibliográficos
Autor(a) principal: Fortunato, Elvira Maria Correia
Data de Publicação: 2010
Outros Autores: Figueiredo, Vitor, Barquinha, Pedro Miguel Cândido, Elamurugu, Elangovan, Barros, Raquel, Gonçalves, Gonçalo, Park, Sang Hee Ko, Martins, Rodrigo Ferrão de Paiva, Hwang, Chisun
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/24020
Resumo: This work was funded by the Portuguese Science Foundation (FCT-MCTES) through projects PTDC/CTM/73943/2006, PTDC/EEA-ELC/64975/2006, ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) from ETRI Korea. We thank K. Nomura for the Seebeck measurements and N. Franco for the XRD analysis.
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spelling Thin-film transistors based on p-type Cu2O thin films produced at room temperatureBottom gateElectrical performanceField-effect mobilitiesOn/off ratioP-typePolycrystalline structurerf-Magnetron sputteringRoom temperatureElectrodepositionCopper oxidesCuprous oxideThis work was funded by the Portuguese Science Foundation (FCT-MCTES) through projects PTDC/CTM/73943/2006, PTDC/EEA-ELC/64975/2006, ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) from ETRI Korea. We thank K. Nomura for the Seebeck measurements and N. Franco for the XRD analysis.Copper oxide (Cu2 O) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm2 /V s and an on/off ratio of 2× 102.DCM - Departamento de Ciência dos MateriaisCENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)UNINOVA-Instituto de Desenvolvimento de Novas TecnologiasRUNFortunato, Elvira Maria CorreiaFigueiredo, VitorBarquinha, Pedro Miguel CândidoElamurugu, ElangovanBarros, RaquelGonçalves, GonçaloPark, Sang Hee KoMartins, Rodrigo Ferrão de PaivaHwang, Chisun2017-10-10T22:00:39Z20102010-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/24020eng0003-6951PURE: 163361https://doi.org/10.1063/1.3428434info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:12:24Zoai:run.unl.pt:10362/24020Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:27:57.472429Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Thin-film transistors based on p-type Cu2O thin films produced at room temperature
title Thin-film transistors based on p-type Cu2O thin films produced at room temperature
spellingShingle Thin-film transistors based on p-type Cu2O thin films produced at room temperature
Fortunato, Elvira Maria Correia
Bottom gate
Electrical performance
Field-effect mobilities
On/off ratio
P-type
Polycrystalline structure
rf-Magnetron sputtering
Room temperature
Electrodeposition
Copper oxides
Cuprous oxide
title_short Thin-film transistors based on p-type Cu2O thin films produced at room temperature
title_full Thin-film transistors based on p-type Cu2O thin films produced at room temperature
title_fullStr Thin-film transistors based on p-type Cu2O thin films produced at room temperature
title_full_unstemmed Thin-film transistors based on p-type Cu2O thin films produced at room temperature
title_sort Thin-film transistors based on p-type Cu2O thin films produced at room temperature
author Fortunato, Elvira Maria Correia
author_facet Fortunato, Elvira Maria Correia
Figueiredo, Vitor
Barquinha, Pedro Miguel Cândido
Elamurugu, Elangovan
Barros, Raquel
Gonçalves, Gonçalo
Park, Sang Hee Ko
Martins, Rodrigo Ferrão de Paiva
Hwang, Chisun
author_role author
author2 Figueiredo, Vitor
Barquinha, Pedro Miguel Cândido
Elamurugu, Elangovan
Barros, Raquel
Gonçalves, Gonçalo
Park, Sang Hee Ko
Martins, Rodrigo Ferrão de Paiva
Hwang, Chisun
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv DCM - Departamento de Ciência dos Materiais
CENIMAT-i3N - Centro de Investigação de Materiais (Lab. Associado I3N)
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
RUN
dc.contributor.author.fl_str_mv Fortunato, Elvira Maria Correia
Figueiredo, Vitor
Barquinha, Pedro Miguel Cândido
Elamurugu, Elangovan
Barros, Raquel
Gonçalves, Gonçalo
Park, Sang Hee Ko
Martins, Rodrigo Ferrão de Paiva
Hwang, Chisun
dc.subject.por.fl_str_mv Bottom gate
Electrical performance
Field-effect mobilities
On/off ratio
P-type
Polycrystalline structure
rf-Magnetron sputtering
Room temperature
Electrodeposition
Copper oxides
Cuprous oxide
topic Bottom gate
Electrical performance
Field-effect mobilities
On/off ratio
P-type
Polycrystalline structure
rf-Magnetron sputtering
Room temperature
Electrodeposition
Copper oxides
Cuprous oxide
description This work was funded by the Portuguese Science Foundation (FCT-MCTES) through projects PTDC/CTM/73943/2006, PTDC/EEA-ELC/64975/2006, ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) from ETRI Korea. We thank K. Nomura for the Seebeck measurements and N. Franco for the XRD analysis.
publishDate 2010
dc.date.none.fl_str_mv 2010
2010-01-01T00:00:00Z
2017-10-10T22:00:39Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/24020
url http://hdl.handle.net/10362/24020
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0003-6951
PURE: 163361
https://doi.org/10.1063/1.3428434
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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