Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.22/21845 |
Resumo: | As devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the window layer by inserting buffer layers to adjust the transition. Depth-resolved studies are key for a fundamental understanding of the interface. In the present experiment, the interface between the chalcopyrite Cu(In,Ga)Se2 absorber and various buffer layers are investigated using low-energy muon spin rotation (μSR) spectroscopy. Depth resolution in the nm range is achieved by implanting the muons with different energies so that they stop at different depths in the sample. Near the interface, a region about 50 nm wide is detected where the lattice is more distorted than further inside the absorber. The distortion is attributed to the long-range strain field caused by defects. These measurements allow a quantification of the corresponding passivation effect of the buffer layer. Bath-deposited cadmium sulfide provides the best defect passivation in the near interface region, in contrast to the dry-deposited oxides, which have a much smaller effect. The experiment demonstrates the great potential of low energy μSR spectroscopy for microscopic interfacial studies of multilayer systems. |
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Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin SpectroscopyAs devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the window layer by inserting buffer layers to adjust the transition. Depth-resolved studies are key for a fundamental understanding of the interface. In the present experiment, the interface between the chalcopyrite Cu(In,Ga)Se2 absorber and various buffer layers are investigated using low-energy muon spin rotation (μSR) spectroscopy. Depth resolution in the nm range is achieved by implanting the muons with different energies so that they stop at different depths in the sample. Near the interface, a region about 50 nm wide is detected where the lattice is more distorted than further inside the absorber. The distortion is attributed to the long-range strain field caused by defects. These measurements allow a quantification of the corresponding passivation effect of the buffer layer. Bath-deposited cadmium sulfide provides the best defect passivation in the near interface region, in contrast to the dry-deposited oxides, which have a much smaller effect. The experiment demonstrates the great potential of low energy μSR spectroscopy for microscopic interfacial studies of multilayer systems.This work is based on experiments performed at the Swiss Muon Source (SμS), Paul Scherrer Institute, Villigen, Switzerland. A.W. thanks Prof. Klaus Lips for the invitation to the Helmholtz-Zentrum Berlin für Materialien und Energie. This work was supported with funds from FEDER (Programa Operacional Factores de Competitividade COMPETE) and by national funds from FCT - Fundação para a Ciância e Tecnologia, I. P. (Portugal) under projects PTDC/FIS-MAC/29696/2017, PD/BD/142780/2018, UID/04564/2020, UIDB/04730/2020, UIDP/04730/2020, UIDB/50025/2020, and UIDP/50025/2020.WileyRepositório Científico do Instituto Politécnico do PortoAlberto, Helena V.Vilão, Rui C.Ribeiro, Eduardo F. M.Gil, João M.Curado, Marco A.Teixeira, Jennifer P.Fernandes, Paulo A.Cunha, José M. V.Salomé, Pedro M. P.Edoff, MarikaMartins, Maria I.Prokscha, ThomasSalman, ZaherWeidinger, Alois20222035-01-01T00:00:00Z2022-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.22/21845eng10.1002/admi.202200374metadata only accessinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-03-13T13:18:10Zoai:recipp.ipp.pt:10400.22/21845Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T17:41:55.859134Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy |
title |
Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy |
spellingShingle |
Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy Alberto, Helena V. |
title_short |
Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy |
title_full |
Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy |
title_fullStr |
Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy |
title_full_unstemmed |
Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy |
title_sort |
Characterization of the Interfacial Defect Layer in Chalcopyrite Solar Cells by Depth‐Resolved Muon Spin Spectroscopy |
author |
Alberto, Helena V. |
author_facet |
Alberto, Helena V. Vilão, Rui C. Ribeiro, Eduardo F. M. Gil, João M. Curado, Marco A. Teixeira, Jennifer P. Fernandes, Paulo A. Cunha, José M. V. Salomé, Pedro M. P. Edoff, Marika Martins, Maria I. Prokscha, Thomas Salman, Zaher Weidinger, Alois |
author_role |
author |
author2 |
Vilão, Rui C. Ribeiro, Eduardo F. M. Gil, João M. Curado, Marco A. Teixeira, Jennifer P. Fernandes, Paulo A. Cunha, José M. V. Salomé, Pedro M. P. Edoff, Marika Martins, Maria I. Prokscha, Thomas Salman, Zaher Weidinger, Alois |
author2_role |
author author author author author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Repositório Científico do Instituto Politécnico do Porto |
dc.contributor.author.fl_str_mv |
Alberto, Helena V. Vilão, Rui C. Ribeiro, Eduardo F. M. Gil, João M. Curado, Marco A. Teixeira, Jennifer P. Fernandes, Paulo A. Cunha, José M. V. Salomé, Pedro M. P. Edoff, Marika Martins, Maria I. Prokscha, Thomas Salman, Zaher Weidinger, Alois |
description |
As devices become smaller and more complex, the interfaces between adjacent materials become increasingly important and are often critical to device performance. An important research goal is to improve the interface between the absorber and the window layer by inserting buffer layers to adjust the transition. Depth-resolved studies are key for a fundamental understanding of the interface. In the present experiment, the interface between the chalcopyrite Cu(In,Ga)Se2 absorber and various buffer layers are investigated using low-energy muon spin rotation (μSR) spectroscopy. Depth resolution in the nm range is achieved by implanting the muons with different energies so that they stop at different depths in the sample. Near the interface, a region about 50 nm wide is detected where the lattice is more distorted than further inside the absorber. The distortion is attributed to the long-range strain field caused by defects. These measurements allow a quantification of the corresponding passivation effect of the buffer layer. Bath-deposited cadmium sulfide provides the best defect passivation in the near interface region, in contrast to the dry-deposited oxides, which have a much smaller effect. The experiment demonstrates the great potential of low energy μSR spectroscopy for microscopic interfacial studies of multilayer systems. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022 2022-01-01T00:00:00Z 2035-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.22/21845 |
url |
http://hdl.handle.net/10400.22/21845 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1002/admi.202200374 |
dc.rights.driver.fl_str_mv |
metadata only access info:eu-repo/semantics/openAccess |
rights_invalid_str_mv |
metadata only access |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Wiley |
publisher.none.fl_str_mv |
Wiley |
dc.source.none.fl_str_mv |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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