Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3

Detalhes bibliográficos
Autor(a) principal: Curado, Marco A.
Data de Publicação: 2020
Outros Autores: Teixeira, Jennifer P., Monteiro, Margarida, Ribeiro, E. F. M., Vilão, Rui César, Alberto, Helena Vieira, Cunha, José M. V., Lopes, Tomás S., Oliveira, Kevin, Donzel-Gargand, Olivier, Hultqvist, Adam, Calderon, Sebastian, Barreiros, Maria Alexandra, Chiappim, W., Leitão, Joaquim Prata, Silva, Ana Gomes, Prokscha, Thomas, Vinhais, Carlos, Fernandes, Paulo A., Salomé, Pedro M. P.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/113161
Resumo: NovaCell (028075) InovSolarCells (029696) 1F/00133/2015 PD/BD/142780/2018 SFREHBD/1/1677G/2019 MB/50025/2020 UIDP/50025/2020 CENTRO-01-0145-FEDER-000005 FCT UIDB/04730/2020 UID/FIS/04564/2016 PTDC/FIS-MAC/29696/2017
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spelling Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3Culprits and benefitsAlOAtomic layer deposition (ALD)Cu(In,Ga)Se (CIGS)Surface passivationThin film solar cellsMaterials Science(all)NovaCell (028075) InovSolarCells (029696) 1F/00133/2015 PD/BD/142780/2018 SFREHBD/1/1677G/2019 MB/50025/2020 UIDP/50025/2020 CENTRO-01-0145-FEDER-000005 FCT UIDB/04730/2020 UID/FIS/04564/2016 PTDC/FIS-MAC/29696/2017In the past years, the strategies used to break the Cu(In,Ga)Se2 (CIGS) light to power conversion efficiency world record value were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, further advances in the solar cell architecture are needed, in particular, with respect to the CIGS interfaces. In this study, we evaluate the structural, morphological and optoelectronic impact of an Al2O3 layer as a potential front passivation layer on the CIGS properties, as well as an Al2O3 tunneling layer between CIGS and CdS. Morphological and structural analyses reveal that the use of Al2O3 alone is not detrimental to CIGS, although it does not resist to the CdS chemical bath deposition. The CIGS optoelectronic properties degrade when the CdS is deposited on top of Al2O3. Nonetheless, when Al2O3 is used alone, the optoelectronic measurements reveal a positive impact of this inclusion such as a very low concentration of interface defects while keeping the same CIGS recombination channels. Thus, we suggest that an Al2O3 front passivation layer can be successfully used with alternative buffer layers. Depth-resolved microscopic analysis of the CIGS interface with slow-muons strongly suggests for the first time that low-energy muon spin spectroscopy (LE-µSR) is sensitive to both charge carrier separation and bulk recombination in complex semiconductors. The demonstration that Al2O3 has the potential to be used as a front passivation layer is of significant importance, considering that Al2O3 has been widely studied as rear interface passivation material.DF – Departamento de FísicaRUNCurado, Marco A.Teixeira, Jennifer P.Monteiro, MargaridaRibeiro, E. F. M.Vilão, Rui CésarAlberto, Helena VieiraCunha, José M. V.Lopes, Tomás S.Oliveira, KevinDonzel-Gargand, OlivierHultqvist, AdamCalderon, SebastianBarreiros, Maria AlexandraChiappim, W.Leitão, Joaquim PrataSilva, Ana GomesProkscha, ThomasVinhais, CarlosFernandes, Paulo A.Salomé, Pedro M. P.2021-03-04T23:54:54Z2020-122020-12-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/113161eng2352-9407PURE: 27032154https://doi.org/10.1016/j.apmt.2020.100867info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:56:21Zoai:run.unl.pt:10362/113161Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:42:16.906113Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
Culprits and benefits
title Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
spellingShingle Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
Curado, Marco A.
AlO
Atomic layer deposition (ALD)
Cu(In,Ga)Se (CIGS)
Surface passivation
Thin film solar cells
Materials Science(all)
title_short Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
title_full Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
title_fullStr Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
title_full_unstemmed Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
title_sort Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
author Curado, Marco A.
author_facet Curado, Marco A.
Teixeira, Jennifer P.
Monteiro, Margarida
Ribeiro, E. F. M.
Vilão, Rui César
Alberto, Helena Vieira
Cunha, José M. V.
Lopes, Tomás S.
Oliveira, Kevin
Donzel-Gargand, Olivier
Hultqvist, Adam
Calderon, Sebastian
Barreiros, Maria Alexandra
Chiappim, W.
Leitão, Joaquim Prata
Silva, Ana Gomes
Prokscha, Thomas
Vinhais, Carlos
Fernandes, Paulo A.
Salomé, Pedro M. P.
author_role author
author2 Teixeira, Jennifer P.
Monteiro, Margarida
Ribeiro, E. F. M.
Vilão, Rui César
Alberto, Helena Vieira
Cunha, José M. V.
Lopes, Tomás S.
Oliveira, Kevin
Donzel-Gargand, Olivier
Hultqvist, Adam
Calderon, Sebastian
Barreiros, Maria Alexandra
Chiappim, W.
Leitão, Joaquim Prata
Silva, Ana Gomes
Prokscha, Thomas
Vinhais, Carlos
Fernandes, Paulo A.
Salomé, Pedro M. P.
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv DF – Departamento de Física
RUN
dc.contributor.author.fl_str_mv Curado, Marco A.
Teixeira, Jennifer P.
Monteiro, Margarida
Ribeiro, E. F. M.
Vilão, Rui César
Alberto, Helena Vieira
Cunha, José M. V.
Lopes, Tomás S.
Oliveira, Kevin
Donzel-Gargand, Olivier
Hultqvist, Adam
Calderon, Sebastian
Barreiros, Maria Alexandra
Chiappim, W.
Leitão, Joaquim Prata
Silva, Ana Gomes
Prokscha, Thomas
Vinhais, Carlos
Fernandes, Paulo A.
Salomé, Pedro M. P.
dc.subject.por.fl_str_mv AlO
Atomic layer deposition (ALD)
Cu(In,Ga)Se (CIGS)
Surface passivation
Thin film solar cells
Materials Science(all)
topic AlO
Atomic layer deposition (ALD)
Cu(In,Ga)Se (CIGS)
Surface passivation
Thin film solar cells
Materials Science(all)
description NovaCell (028075) InovSolarCells (029696) 1F/00133/2015 PD/BD/142780/2018 SFREHBD/1/1677G/2019 MB/50025/2020 UIDP/50025/2020 CENTRO-01-0145-FEDER-000005 FCT UIDB/04730/2020 UID/FIS/04564/2016 PTDC/FIS-MAC/29696/2017
publishDate 2020
dc.date.none.fl_str_mv 2020-12
2020-12-01T00:00:00Z
2021-03-04T23:54:54Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/113161
url http://hdl.handle.net/10362/113161
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2352-9407
PURE: 27032154
https://doi.org/10.1016/j.apmt.2020.100867
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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