Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3
Autor(a) principal: | |
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Data de Publicação: | 2020 |
Outros Autores: | , , , , , , , , , , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10362/113161 |
Resumo: | NovaCell (028075) InovSolarCells (029696) 1F/00133/2015 PD/BD/142780/2018 SFREHBD/1/1677G/2019 MB/50025/2020 UIDP/50025/2020 CENTRO-01-0145-FEDER-000005 FCT UIDB/04730/2020 UID/FIS/04564/2016 PTDC/FIS-MAC/29696/2017 |
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oai:run.unl.pt:10362/113161 |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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7160 |
spelling |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3Culprits and benefitsAlOAtomic layer deposition (ALD)Cu(In,Ga)Se (CIGS)Surface passivationThin film solar cellsMaterials Science(all)NovaCell (028075) InovSolarCells (029696) 1F/00133/2015 PD/BD/142780/2018 SFREHBD/1/1677G/2019 MB/50025/2020 UIDP/50025/2020 CENTRO-01-0145-FEDER-000005 FCT UIDB/04730/2020 UID/FIS/04564/2016 PTDC/FIS-MAC/29696/2017In the past years, the strategies used to break the Cu(In,Ga)Se2 (CIGS) light to power conversion efficiency world record value were based on improvements of the absorber optoelectronic and crystalline properties, mainly using complex post-deposition treatments. To reach even higher efficiency values, further advances in the solar cell architecture are needed, in particular, with respect to the CIGS interfaces. In this study, we evaluate the structural, morphological and optoelectronic impact of an Al2O3 layer as a potential front passivation layer on the CIGS properties, as well as an Al2O3 tunneling layer between CIGS and CdS. Morphological and structural analyses reveal that the use of Al2O3 alone is not detrimental to CIGS, although it does not resist to the CdS chemical bath deposition. The CIGS optoelectronic properties degrade when the CdS is deposited on top of Al2O3. Nonetheless, when Al2O3 is used alone, the optoelectronic measurements reveal a positive impact of this inclusion such as a very low concentration of interface defects while keeping the same CIGS recombination channels. Thus, we suggest that an Al2O3 front passivation layer can be successfully used with alternative buffer layers. Depth-resolved microscopic analysis of the CIGS interface with slow-muons strongly suggests for the first time that low-energy muon spin spectroscopy (LE-µSR) is sensitive to both charge carrier separation and bulk recombination in complex semiconductors. The demonstration that Al2O3 has the potential to be used as a front passivation layer is of significant importance, considering that Al2O3 has been widely studied as rear interface passivation material.DF – Departamento de FísicaRUNCurado, Marco A.Teixeira, Jennifer P.Monteiro, MargaridaRibeiro, E. F. M.Vilão, Rui CésarAlberto, Helena VieiraCunha, José M. V.Lopes, Tomás S.Oliveira, KevinDonzel-Gargand, OlivierHultqvist, AdamCalderon, SebastianBarreiros, Maria AlexandraChiappim, W.Leitão, Joaquim PrataSilva, Ana GomesProkscha, ThomasVinhais, CarlosFernandes, Paulo A.Salomé, Pedro M. P.2021-03-04T23:54:54Z2020-122020-12-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10362/113161eng2352-9407PURE: 27032154https://doi.org/10.1016/j.apmt.2020.100867info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:56:21Zoai:run.unl.pt:10362/113161Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:42:16.906113Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 Culprits and benefits |
title |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 |
spellingShingle |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 Curado, Marco A. AlO Atomic layer deposition (ALD) Cu(In,Ga)Se (CIGS) Surface passivation Thin film solar cells Materials Science(all) |
title_short |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 |
title_full |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 |
title_fullStr |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 |
title_full_unstemmed |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 |
title_sort |
Front passivation of Cu(In,Ga)Se2 solar cells using Al2O3 |
author |
Curado, Marco A. |
author_facet |
Curado, Marco A. Teixeira, Jennifer P. Monteiro, Margarida Ribeiro, E. F. M. Vilão, Rui César Alberto, Helena Vieira Cunha, José M. V. Lopes, Tomás S. Oliveira, Kevin Donzel-Gargand, Olivier Hultqvist, Adam Calderon, Sebastian Barreiros, Maria Alexandra Chiappim, W. Leitão, Joaquim Prata Silva, Ana Gomes Prokscha, Thomas Vinhais, Carlos Fernandes, Paulo A. Salomé, Pedro M. P. |
author_role |
author |
author2 |
Teixeira, Jennifer P. Monteiro, Margarida Ribeiro, E. F. M. Vilão, Rui César Alberto, Helena Vieira Cunha, José M. V. Lopes, Tomás S. Oliveira, Kevin Donzel-Gargand, Olivier Hultqvist, Adam Calderon, Sebastian Barreiros, Maria Alexandra Chiappim, W. Leitão, Joaquim Prata Silva, Ana Gomes Prokscha, Thomas Vinhais, Carlos Fernandes, Paulo A. Salomé, Pedro M. P. |
author2_role |
author author author author author author author author author author author author author author author author author author author |
dc.contributor.none.fl_str_mv |
DF – Departamento de Física RUN |
dc.contributor.author.fl_str_mv |
Curado, Marco A. Teixeira, Jennifer P. Monteiro, Margarida Ribeiro, E. F. M. Vilão, Rui César Alberto, Helena Vieira Cunha, José M. V. Lopes, Tomás S. Oliveira, Kevin Donzel-Gargand, Olivier Hultqvist, Adam Calderon, Sebastian Barreiros, Maria Alexandra Chiappim, W. Leitão, Joaquim Prata Silva, Ana Gomes Prokscha, Thomas Vinhais, Carlos Fernandes, Paulo A. Salomé, Pedro M. P. |
dc.subject.por.fl_str_mv |
AlO Atomic layer deposition (ALD) Cu(In,Ga)Se (CIGS) Surface passivation Thin film solar cells Materials Science(all) |
topic |
AlO Atomic layer deposition (ALD) Cu(In,Ga)Se (CIGS) Surface passivation Thin film solar cells Materials Science(all) |
description |
NovaCell (028075) InovSolarCells (029696) 1F/00133/2015 PD/BD/142780/2018 SFREHBD/1/1677G/2019 MB/50025/2020 UIDP/50025/2020 CENTRO-01-0145-FEDER-000005 FCT UIDB/04730/2020 UID/FIS/04564/2016 PTDC/FIS-MAC/29696/2017 |
publishDate |
2020 |
dc.date.none.fl_str_mv |
2020-12 2020-12-01T00:00:00Z 2021-03-04T23:54:54Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10362/113161 |
url |
http://hdl.handle.net/10362/113161 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2352-9407 PURE: 27032154 https://doi.org/10.1016/j.apmt.2020.100867 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799138034398003201 |