Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells
Autor(a) principal: | |
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Data de Publicação: | 2023 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://hdl.handle.net/1822/84557 |
Resumo: | Typical Cu(In,Ga)Se2 solar cells are deposited on an opaque molybdenum back contact. However, for applications such as bifacial, semi-transparent or tandem solar cells a transparent back contact is required, for which various transparent conductive oxides have been tested, such as indium- or fluorine-doped tin oxide, and hydrogen-doped indium oxide. Here, a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH) is investigated, where H is supplied from a Ar/H2 (5%) mixed gas and oxygen is pulsed during the entire deposition at room temperature. After deposition, the films are post-annealed in vacuum to optimize their optoelectronic properties. The oxygen plays an important role for the optoelectronic properties, where a high content of oxygen allows higher transparency but also increases the film sheet resistance. Optimum oxygen and Ar/H2 partial pressures of 3.2 E-2 Pa and 13E-2 Pa, respectively, were found, producing IOH films with average visible transparency of 87% and sheet resistance after annealing of 19 Ohm/sq. |
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Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cellsIndium oxideHydrogen-doped indium oxideSputteringTransparent conductive oxideSheet resistanceEngenharia e Tecnologia::Engenharia dos MateriaisScience & TechnologyEnergias renováveis e acessíveisTypical Cu(In,Ga)Se2 solar cells are deposited on an opaque molybdenum back contact. However, for applications such as bifacial, semi-transparent or tandem solar cells a transparent back contact is required, for which various transparent conductive oxides have been tested, such as indium- or fluorine-doped tin oxide, and hydrogen-doped indium oxide. Here, a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH) is investigated, where H is supplied from a Ar/H2 (5%) mixed gas and oxygen is pulsed during the entire deposition at room temperature. After deposition, the films are post-annealed in vacuum to optimize their optoelectronic properties. The oxygen plays an important role for the optoelectronic properties, where a high content of oxygen allows higher transparency but also increases the film sheet resistance. Optimum oxygen and Ar/H2 partial pressures of 3.2 E-2 Pa and 13E-2 Pa, respectively, were found, producing IOH films with average visible transparency of 87% and sheet resistance after annealing of 19 Ohm/sq.This work was supported by the project “Semi-Transparent Solar cells for building integrated photovoltaics (STAR-SOL)”, funded by FCT – Fundação para a Ciência e a Tecnologia (FCT‐FNR/0001/2018). Marina Alves thanks the Fundação para a Ciência e a Tecnologia (FCT), Portugal for the PhD Grant (2020.06063.BD).ElsevierUniversidade do MinhoAlves, MarinaBrito, DanielCarneiro, Joaquim A. O.Teixeira, Vasco M. P.Sadewasser, Sascha2023-04-062023-04-06T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/84557engAlves, M., Brito, D., Carneiro, J., Teixeira, V., & Sadewasser, S. (2023, June). Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells. Thin Solid Films. Elsevier BV. http://doi.org/10.1016/j.tsf.2023.1398400040-60901879-273110.1016/j.tsf.2023.139840https://www.sciencedirect.com/science/article/pii/S0040609023001700info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:51:14Zoai:repositorium.sdum.uminho.pt:1822/84557Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:50:06.096156Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells |
title |
Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells |
spellingShingle |
Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells Alves, Marina Indium oxide Hydrogen-doped indium oxide Sputtering Transparent conductive oxide Sheet resistance Engenharia e Tecnologia::Engenharia dos Materiais Science & Technology Energias renováveis e acessíveis |
title_short |
Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells |
title_full |
Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells |
title_fullStr |
Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells |
title_full_unstemmed |
Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells |
title_sort |
Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells |
author |
Alves, Marina |
author_facet |
Alves, Marina Brito, Daniel Carneiro, Joaquim A. O. Teixeira, Vasco M. P. Sadewasser, Sascha |
author_role |
author |
author2 |
Brito, Daniel Carneiro, Joaquim A. O. Teixeira, Vasco M. P. Sadewasser, Sascha |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Alves, Marina Brito, Daniel Carneiro, Joaquim A. O. Teixeira, Vasco M. P. Sadewasser, Sascha |
dc.subject.por.fl_str_mv |
Indium oxide Hydrogen-doped indium oxide Sputtering Transparent conductive oxide Sheet resistance Engenharia e Tecnologia::Engenharia dos Materiais Science & Technology Energias renováveis e acessíveis |
topic |
Indium oxide Hydrogen-doped indium oxide Sputtering Transparent conductive oxide Sheet resistance Engenharia e Tecnologia::Engenharia dos Materiais Science & Technology Energias renováveis e acessíveis |
description |
Typical Cu(In,Ga)Se2 solar cells are deposited on an opaque molybdenum back contact. However, for applications such as bifacial, semi-transparent or tandem solar cells a transparent back contact is required, for which various transparent conductive oxides have been tested, such as indium- or fluorine-doped tin oxide, and hydrogen-doped indium oxide. Here, a radio-frequency magnetron sputtering deposition process for In2O3:H (IOH) is investigated, where H is supplied from a Ar/H2 (5%) mixed gas and oxygen is pulsed during the entire deposition at room temperature. After deposition, the films are post-annealed in vacuum to optimize their optoelectronic properties. The oxygen plays an important role for the optoelectronic properties, where a high content of oxygen allows higher transparency but also increases the film sheet resistance. Optimum oxygen and Ar/H2 partial pressures of 3.2 E-2 Pa and 13E-2 Pa, respectively, were found, producing IOH films with average visible transparency of 87% and sheet resistance after annealing of 19 Ohm/sq. |
publishDate |
2023 |
dc.date.none.fl_str_mv |
2023-04-06 2023-04-06T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/1822/84557 |
url |
https://hdl.handle.net/1822/84557 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Alves, M., Brito, D., Carneiro, J., Teixeira, V., & Sadewasser, S. (2023, June). Radio-frequency magnetron sputtering deposition process for In2O3:H transparent conductive oxide films for application in Cu(In,Ga)Se2 solar cells. Thin Solid Films. Elsevier BV. http://doi.org/10.1016/j.tsf.2023.139840 0040-6090 1879-2731 10.1016/j.tsf.2023.139840 https://www.sciencedirect.com/science/article/pii/S0040609023001700 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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1799133084259450880 |