Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

Detalhes bibliográficos
Autor(a) principal: Oliveira, F.
Data de Publicação: 2015
Outros Autores: Fischer, I. A., Benedetti, A., Cerqueira, M. F., Vasilevskiy, Mikhail, Stefanov, S., Chiussi, S., Schulze, J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/39103
Resumo: We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.
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spelling Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysisSelf-assembled GeSn dotsMolecular beam epitaxyTEM&AFMRamanCiências Naturais::Ciências FísicasScience & TechnologyWe report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.This work was partly supported by the Portuguese Foundation for Science and Technology (FCT) through Strategic Project PEst-C/FIS/UI0607/2013 and PhD Fellowship (F. Oliveira).AIP PublishingUniversidade do MinhoOliveira, F.Fischer, I. A.Benedetti, A.Cerqueira, M. F.Vasilevskiy, MikhailStefanov, S.Chiussi, S.Schulze, J.20152015-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/39103engOliveira, F., Fischer, I. A., Benedetti, A., Cerqueira, M. F., Vasilevskiy, M. I., Stefanov, S., . . . Schulze, J. (2015). Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis. Journal of Applied Physics, 117(12). doi: 10.1063/1.49159390021-897910.1063/1.4915939http://dx.doi.org/10.1063/1.4915939info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-05-11T04:17:38Zoai:repositorium.sdum.uminho.pt:1822/39103Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-05-11T04:17:38Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
title Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
spellingShingle Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
Oliveira, F.
Self-assembled GeSn dots
Molecular beam epitaxy
TEM&AFM
Raman
Ciências Naturais::Ciências Físicas
Science & Technology
title_short Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
title_full Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
title_fullStr Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
title_full_unstemmed Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
title_sort Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis
author Oliveira, F.
author_facet Oliveira, F.
Fischer, I. A.
Benedetti, A.
Cerqueira, M. F.
Vasilevskiy, Mikhail
Stefanov, S.
Chiussi, S.
Schulze, J.
author_role author
author2 Fischer, I. A.
Benedetti, A.
Cerqueira, M. F.
Vasilevskiy, Mikhail
Stefanov, S.
Chiussi, S.
Schulze, J.
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Oliveira, F.
Fischer, I. A.
Benedetti, A.
Cerqueira, M. F.
Vasilevskiy, Mikhail
Stefanov, S.
Chiussi, S.
Schulze, J.
dc.subject.por.fl_str_mv Self-assembled GeSn dots
Molecular beam epitaxy
TEM&AFM
Raman
Ciências Naturais::Ciências Físicas
Science & Technology
topic Self-assembled GeSn dots
Molecular beam epitaxy
TEM&AFM
Raman
Ciências Naturais::Ciências Físicas
Science & Technology
description We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge0.96Sn0.04 self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.
publishDate 2015
dc.date.none.fl_str_mv 2015
2015-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/39103
url http://hdl.handle.net/1822/39103
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Oliveira, F., Fischer, I. A., Benedetti, A., Cerqueira, M. F., Vasilevskiy, M. I., Stefanov, S., . . . Schulze, J. (2015). Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis. Journal of Applied Physics, 117(12). doi: 10.1063/1.4915939
0021-8979
10.1063/1.4915939
http://dx.doi.org/10.1063/1.4915939
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP Publishing
publisher.none.fl_str_mv AIP Publishing
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv mluisa.alvim@gmail.com
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