Structural quality in single crystalline CdSe ingots grown by PVT

Detalhes bibliográficos
Autor(a) principal: D´Elía,Raúl Luis
Data de Publicação: 2020
Outros Autores: Aguirre,Myriam Haydée, Stéfano,María Cristina Di, Heredia,Eduardo Armando, Martínez,Ana María, Cánepa,Horacio Ricardo, García,Javier Luis Mariano Núñez, Trigubó,Alicia Beatriz
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Matéria (Rio de Janeiro. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762020000100339
Resumo: ABSTRACT CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor.
id RLAM-1_7d7fd5b000910f25633698c16ced0ccd
oai_identifier_str oai:scielo:S1517-70762020000100339
network_acronym_str RLAM-1
network_name_str Matéria (Rio de Janeiro. Online)
repository_id_str
spelling Structural quality in single crystalline CdSe ingots grown by PVTSingle crystalline CdSe ingotsPVTHPBChemical etchingOptical MicroscopyTransmission and scanning electron microscopyABSTRACT CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor.Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiroem cooperação com a Associação Brasileira do Hidrogênio, ABH22020-01-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762020000100339Matéria (Rio de Janeiro) v.25 n.1 2020reponame:Matéria (Rio de Janeiro. Online)instname:Matéria (Rio de Janeiro. Online)instacron:RLAM10.1590/s1517-707620200001.0911info:eu-repo/semantics/openAccessD´Elía,Raúl LuisAguirre,Myriam HaydéeStéfano,María Cristina DiHeredia,Eduardo ArmandoMartínez,Ana MaríaCánepa,Horacio RicardoGarcía,Javier Luis Mariano NúñezTrigubó,Alicia Beatrizeng2020-07-22T00:00:00Zoai:scielo:S1517-70762020000100339Revistahttp://www.materia.coppe.ufrj.br/https://old.scielo.br/oai/scielo-oai.php||materia@labh2.coppe.ufrj.br1517-70761517-7076opendoar:2020-07-22T00:00Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online)false
dc.title.none.fl_str_mv Structural quality in single crystalline CdSe ingots grown by PVT
title Structural quality in single crystalline CdSe ingots grown by PVT
spellingShingle Structural quality in single crystalline CdSe ingots grown by PVT
D´Elía,Raúl Luis
Single crystalline CdSe ingots
PVT
HPB
Chemical etching
Optical Microscopy
Transmission and scanning electron microscopy
title_short Structural quality in single crystalline CdSe ingots grown by PVT
title_full Structural quality in single crystalline CdSe ingots grown by PVT
title_fullStr Structural quality in single crystalline CdSe ingots grown by PVT
title_full_unstemmed Structural quality in single crystalline CdSe ingots grown by PVT
title_sort Structural quality in single crystalline CdSe ingots grown by PVT
author D´Elía,Raúl Luis
author_facet D´Elía,Raúl Luis
Aguirre,Myriam Haydée
Stéfano,María Cristina Di
Heredia,Eduardo Armando
Martínez,Ana María
Cánepa,Horacio Ricardo
García,Javier Luis Mariano Núñez
Trigubó,Alicia Beatriz
author_role author
author2 Aguirre,Myriam Haydée
Stéfano,María Cristina Di
Heredia,Eduardo Armando
Martínez,Ana María
Cánepa,Horacio Ricardo
García,Javier Luis Mariano Núñez
Trigubó,Alicia Beatriz
author2_role author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv D´Elía,Raúl Luis
Aguirre,Myriam Haydée
Stéfano,María Cristina Di
Heredia,Eduardo Armando
Martínez,Ana María
Cánepa,Horacio Ricardo
García,Javier Luis Mariano Núñez
Trigubó,Alicia Beatriz
dc.subject.por.fl_str_mv Single crystalline CdSe ingots
PVT
HPB
Chemical etching
Optical Microscopy
Transmission and scanning electron microscopy
topic Single crystalline CdSe ingots
PVT
HPB
Chemical etching
Optical Microscopy
Transmission and scanning electron microscopy
description ABSTRACT CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor.
publishDate 2020
dc.date.none.fl_str_mv 2020-01-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762020000100339
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1517-70762020000100339
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/s1517-707620200001.0911
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro
em cooperação com a Associação Brasileira do Hidrogênio, ABH2
publisher.none.fl_str_mv Laboratório de Hidrogênio, Coppe - Universidade Federal do Rio de Janeiro
em cooperação com a Associação Brasileira do Hidrogênio, ABH2
dc.source.none.fl_str_mv Matéria (Rio de Janeiro) v.25 n.1 2020
reponame:Matéria (Rio de Janeiro. Online)
instname:Matéria (Rio de Janeiro. Online)
instacron:RLAM
instname_str Matéria (Rio de Janeiro. Online)
instacron_str RLAM
institution RLAM
reponame_str Matéria (Rio de Janeiro. Online)
collection Matéria (Rio de Janeiro. Online)
repository.name.fl_str_mv Matéria (Rio de Janeiro. Online) - Matéria (Rio de Janeiro. Online)
repository.mail.fl_str_mv ||materia@labh2.coppe.ufrj.br
_version_ 1752126692925636608

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