InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications

Detalhes bibliográficos
Autor(a) principal: Lamas,T. E.
Data de Publicação: 2006
Outros Autores: Quivy,A. A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300046
Resumo: In this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAs quantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulating therefore a low deposition rate. Room-temperature photoluminescence experiments carried out on these samples showed intense emissions with a wavelength exceeding 1.35µm. Our preliminary data indicate that even better results can be achieved by further manipulation of the growth conditions.
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spelling InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applicationsMolecular-beam epitaxyInAs quantum dotsInGaAs quantum wellIn this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAs quantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulating therefore a low deposition rate. Room-temperature photoluminescence experiments carried out on these samples showed intense emissions with a wavelength exceeding 1.35µm. Our preliminary data indicate that even better results can be achieved by further manipulation of the growth conditions.Sociedade Brasileira de Física2006-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300046Brazilian Journal of Physics v.36 n.2a 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000300046info:eu-repo/semantics/openAccessLamas,T. E.Quivy,A. A.eng2006-07-06T00:00:00Zoai:scielo:S0103-97332006000300046Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-07-06T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
title InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
spellingShingle InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
Lamas,T. E.
Molecular-beam epitaxy
InAs quantum dots
InGaAs quantum well
title_short InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
title_full InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
title_fullStr InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
title_full_unstemmed InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
title_sort InGaAs embedding of large InAs quantum dots obtained by pulsed in deposition for long-wavelength applications
author Lamas,T. E.
author_facet Lamas,T. E.
Quivy,A. A.
author_role author
author2 Quivy,A. A.
author2_role author
dc.contributor.author.fl_str_mv Lamas,T. E.
Quivy,A. A.
dc.subject.por.fl_str_mv Molecular-beam epitaxy
InAs quantum dots
InGaAs quantum well
topic Molecular-beam epitaxy
InAs quantum dots
InGaAs quantum well
description In this work we studied the molecular-beam epitaxy of large InAs quantum dots embedded in an InGaAs quantum well. The formation of the quantum dots was performed by pulsed deposition of InAs material, simulating therefore a low deposition rate. Room-temperature photoluminescence experiments carried out on these samples showed intense emissions with a wavelength exceeding 1.35µm. Our preliminary data indicate that even better results can be achieved by further manipulation of the growth conditions.
publishDate 2006
dc.date.none.fl_str_mv 2006-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300046
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000300046
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000300046
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.2a 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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