Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs
Autor(a) principal: | |
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Data de Publicação: | 1999 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400041 |
Resumo: | In this paper we present experimental evidence supporting that persistent behavior in the electronic and optical properties of bulk GaAs and AlGaAs can have different origins as: the metastability of a defect, the persistent charge transfer from a defect to another defect, and the transfer from a defect to the conduction band. In particular, we show three different cases in which defects are either directly or indirectly related to persistent changes of the optical absorption, the magnetic circular dichroism of the absorption (MCDA) and the photoconductivity (PC). The three cases are as follows: the transfer of EL2 to the metastable state EL2(0*) in semi-insulating (SI) GaAs causing persistent quenching of the absorption and photoconductivity (PPCQ); the persistent transfer of electrons from stable EL2(0) to arsenic vacancies in lightly n-type GaAs; and the correlated appearance of persistent MCDA and photoconductivity in AlGaAs due to the photoionization of DX-centers. |
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Brazilian Journal of Physics |
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Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAsIn this paper we present experimental evidence supporting that persistent behavior in the electronic and optical properties of bulk GaAs and AlGaAs can have different origins as: the metastability of a defect, the persistent charge transfer from a defect to another defect, and the transfer from a defect to the conduction band. In particular, we show three different cases in which defects are either directly or indirectly related to persistent changes of the optical absorption, the magnetic circular dichroism of the absorption (MCDA) and the photoconductivity (PC). The three cases are as follows: the transfer of EL2 to the metastable state EL2(0*) in semi-insulating (SI) GaAs causing persistent quenching of the absorption and photoconductivity (PPCQ); the persistent transfer of electrons from stable EL2(0) to arsenic vacancies in lightly n-type GaAs; and the correlated appearance of persistent MCDA and photoconductivity in AlGaAs due to the photoionization of DX-centers.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400041Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400041info:eu-repo/semantics/openAccessPinheiro,M.V.BKrambroc,K.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400041Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs |
title |
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs |
spellingShingle |
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs Pinheiro,M.V.B |
title_short |
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs |
title_full |
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs |
title_fullStr |
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs |
title_full_unstemmed |
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs |
title_sort |
Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs |
author |
Pinheiro,M.V.B |
author_facet |
Pinheiro,M.V.B Krambroc,K. |
author_role |
author |
author2 |
Krambroc,K. |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Pinheiro,M.V.B Krambroc,K. |
description |
In this paper we present experimental evidence supporting that persistent behavior in the electronic and optical properties of bulk GaAs and AlGaAs can have different origins as: the metastability of a defect, the persistent charge transfer from a defect to another defect, and the transfer from a defect to the conduction band. In particular, we show three different cases in which defects are either directly or indirectly related to persistent changes of the optical absorption, the magnetic circular dichroism of the absorption (MCDA) and the photoconductivity (PC). The three cases are as follows: the transfer of EL2 to the metastable state EL2(0*) in semi-insulating (SI) GaAs causing persistent quenching of the absorption and photoconductivity (PPCQ); the persistent transfer of electrons from stable EL2(0) to arsenic vacancies in lightly n-type GaAs; and the correlated appearance of persistent MCDA and photoconductivity in AlGaAs due to the photoionization of DX-centers. |
publishDate |
1999 |
dc.date.none.fl_str_mv |
1999-12-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400041 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400041 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97331999000400041 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.29 n.4 1999 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734858832183296 |