Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures

Detalhes bibliográficos
Autor(a) principal: Chitta,V. A.
Data de Publicação: 1999
Outros Autores: Maialle,M. Z., Leão,S. A., Degani,M. H.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400016
Resumo: We calculate the characteristic current-voltage curve of a tunneling device based on semimagnetic semiconductor materials. The device is a heterostructure with layers of Cd1<FONT FACE=Symbol>-</FONT> x Mn x Te in which the magnetic ions Mn2+ interact strongly with the conducting electrons via the s-d exchange interaction. Thermal fluctuations of Mn2+ magnetic moments cause spin-dependent electron scattering that modifies the characteristic current-voltage curve. Our calculation shows how this electron-ion scattering is expected to affect the spin dynamics in transport measurements.
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spelling Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructuresWe calculate the characteristic current-voltage curve of a tunneling device based on semimagnetic semiconductor materials. The device is a heterostructure with layers of Cd1<FONT FACE=Symbol>-</FONT> x Mn x Te in which the magnetic ions Mn2+ interact strongly with the conducting electrons via the s-d exchange interaction. Thermal fluctuations of Mn2+ magnetic moments cause spin-dependent electron scattering that modifies the characteristic current-voltage curve. Our calculation shows how this electron-ion scattering is expected to affect the spin dynamics in transport measurements.Sociedade Brasileira de Física1999-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400016Brazilian Journal of Physics v.29 n.4 1999reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97331999000400016info:eu-repo/semantics/openAccessChitta,V. A.Maialle,M. Z.Leão,S. A.Degani,M. H.eng2001-02-23T00:00:00Zoai:scielo:S0103-97331999000400016Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2001-02-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
title Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
spellingShingle Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
Chitta,V. A.
title_short Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
title_full Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
title_fullStr Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
title_full_unstemmed Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
title_sort Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
author Chitta,V. A.
author_facet Chitta,V. A.
Maialle,M. Z.
Leão,S. A.
Degani,M. H.
author_role author
author2 Maialle,M. Z.
Leão,S. A.
Degani,M. H.
author2_role author
author
author
dc.contributor.author.fl_str_mv Chitta,V. A.
Maialle,M. Z.
Leão,S. A.
Degani,M. H.
description We calculate the characteristic current-voltage curve of a tunneling device based on semimagnetic semiconductor materials. The device is a heterostructure with layers of Cd1<FONT FACE=Symbol>-</FONT> x Mn x Te in which the magnetic ions Mn2+ interact strongly with the conducting electrons via the s-d exchange interaction. Thermal fluctuations of Mn2+ magnetic moments cause spin-dependent electron scattering that modifies the characteristic current-voltage curve. Our calculation shows how this electron-ion scattering is expected to affect the spin dynamics in transport measurements.
publishDate 1999
dc.date.none.fl_str_mv 1999-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400016
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331999000400016
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97331999000400016
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.29 n.4 1999
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
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