Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina
Autor(a) principal: | |
---|---|
Data de Publicação: | 2023 |
Tipo de documento: | Tese |
Idioma: | por |
Título da fonte: | Repositório Institucional da UFSCAR |
Texto Completo: | https://repositorio.ufscar.br/handle/ufscar/18106 |
Resumo: | The optical and electrical properties in a semiconductor can be modeled by structural defects. In this thesis, we study the influence of defects on the optical and electronic properties of organic and inorganic semiconductors in thin films form. Polyaniline (PANI), an organic conductive polymer, was synthesized by the chemical route and deposited on a glass substrate by casting technique. Though, the zinc and silver oxide films were produced by the spray pyrolysis technique. The zinc and silver concentrations were controlled using zinc acetate e silver nitrate concentrations in process synthesis. The films are polycrystalline, and it is noted that phase segregation when the silver nitrate is higher them 5%. The film has grown up just with silver nitrate was exhibit two phases: metallic silver (Ag) in the cubic structure and silver oxide (AgO) in the monoclinic structure. In ternary films, the absorption in the visible region referring to the surface plasmons of Ag is observed. In terms of luminescent properties, two emission bands are present: one, in the ultraviolet region, referring to emissions close to the conduction and valence bands, and another in the visible region, referring to defects. The PANI film has absorptions at 440 nm and 800 nm, characteristic of the salt emeraldine oxidation state, and emits in a broad visible band. The dynamics of photoconduction in PANI were analyzed using a rate equation model. While PANI and silver films showed photoresponses in the order of seconds, films containing Zn showed slow and persistent responses. We also observed the resistive memory effect on the longitudinal transport of ZnO when stimulated by a periodically applied voltage. The memory effect is dependent on the scan period and temperature, and we identified a critical period in the memory effect of 120 min. An increase in the memory effect is also observed with increasing temperature, modeled in terms of the energy barriers present in the crystallite boundaries of the film. |
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de Paiva, Aline BastosDe Godoy, Marcio Peron Francohttp://lattes.cnpq.br/2609654784637427http://lattes.cnpq.br/3108905407780000https://orcid.org/0000-0002-2383-1101https://orcid.org/0000-0002-8376-864203cf06b6-c719-4757-9d24-a8294ac48f4c2023-06-02T13:32:07Z2023-06-02T13:32:07Z2023-03-03DE PAIVA, Aline Bastos. Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina. 2023. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2023. Disponível em: https://repositorio.ufscar.br/handle/ufscar/18106.https://repositorio.ufscar.br/handle/ufscar/18106The optical and electrical properties in a semiconductor can be modeled by structural defects. In this thesis, we study the influence of defects on the optical and electronic properties of organic and inorganic semiconductors in thin films form. Polyaniline (PANI), an organic conductive polymer, was synthesized by the chemical route and deposited on a glass substrate by casting technique. Though, the zinc and silver oxide films were produced by the spray pyrolysis technique. The zinc and silver concentrations were controlled using zinc acetate e silver nitrate concentrations in process synthesis. The films are polycrystalline, and it is noted that phase segregation when the silver nitrate is higher them 5%. The film has grown up just with silver nitrate was exhibit two phases: metallic silver (Ag) in the cubic structure and silver oxide (AgO) in the monoclinic structure. In ternary films, the absorption in the visible region referring to the surface plasmons of Ag is observed. In terms of luminescent properties, two emission bands are present: one, in the ultraviolet region, referring to emissions close to the conduction and valence bands, and another in the visible region, referring to defects. The PANI film has absorptions at 440 nm and 800 nm, characteristic of the salt emeraldine oxidation state, and emits in a broad visible band. The dynamics of photoconduction in PANI were analyzed using a rate equation model. While PANI and silver films showed photoresponses in the order of seconds, films containing Zn showed slow and persistent responses. We also observed the resistive memory effect on the longitudinal transport of ZnO when stimulated by a periodically applied voltage. The memory effect is dependent on the scan period and temperature, and we identified a critical period in the memory effect of 120 min. An increase in the memory effect is also observed with increasing temperature, modeled in terms of the energy barriers present in the crystallite boundaries of the film.As propriedades ópticas e elétricas em um semicondutor podem ser moduladas pelos defeitos estruturais. Nesta tese, estudamos a influência dos defeitos nas propriedades ópticas e eletrônicas de semicondutores orgânicos e inorgânicos na forma de filmes finos. A polianilina (PANI), um polímero conjugado orgânico, foi sintetizado por rota química seguida de casting, enquanto filmes de óxidos de zinco e prata foram produzidos pela técnica de spray pirólise. A concentração de zinco e prata foi controlada através da concentração de acetato de zinco e nitrato de prata durante o processo de síntese. Os filmes são policristalinos e nota-se a segregação de fase quando a porcentagem do terceiro elemento supera 5%. O filme produzido somente com nitrato de prata apresentou duas fases: prata (Ag) metálica na estrutura cúbica e o óxido de prata (AgO) na estrutura monoclínica. Em filmes ternários, nota-se a absorção na região do visível referente aos plasmons de superfície da Ag. Em termos de propriedades luminescentes, duas bandas de emissão são presentes: uma, na região ultravioleta, referente às emissões próximas às bandas de condução e valência e outra na região do visível referente aos defeitos. O filme de PANI possui absorções em 440 nm e 800 nm, característicos ao estado de oxidação sal esmeraldina e emitem em uma banda larga no visível. A dinâmica da fotocondução na PANI foi analisada através de um modelo de equações de taxas. Enquanto os filmes de PANI e de prata apresentam fotorrespostas na ordem de segundos, os filmes contendo Zn apresentaram respostas lentas e persistentes. Observamos também o efeito de memória resistiva no transporte longitudinal do ZnO quando estimulado por uma tensão aplicada periódica. O efeito de memória tem dependência com o período de varredura e temperatura e identificamos um período crítico no efeito de memória de 120 min. Observa-se também um incremento do efeito de memória com o aumento da temperatura, modelado em termos das barreiras de energia presentes nos contornos de cristalitos do filme.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)141636/2018-1porUniversidade Federal de São CarlosCâmpus São CarlosPrograma de Pós-Graduação em Física - PPGFUFSCarAttribution 3.0 Brazilhttp://creativecommons.org/licenses/by/3.0/br/info:eu-repo/semantics/openAccessPolianilinaDefeitosFotoconduçãoMemresistorZnOAgOPolyanilineDefectsPhotoconductionMemresistorCIENCIAS EXATAS E DA TERRA::FISICAInfluência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilinaInfluence of defects on the electrical functionalities of ZnO, AgO and polyanilineinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/doctoralThesis600600ba716b64-7eaf-426d-9800-9e33f2c3353dreponame:Repositório Institucional da UFSCARinstname:Universidade Federal de São Carlos (UFSCAR)instacron:UFSCARORIGINALTese_Aline_Bastos_dePaiva .pdfTese_Aline_Bastos_dePaiva .pdfTeseapplication/pdf6062549https://repositorio.ufscar.br/bitstream/ufscar/18106/1/Tese_Aline_Bastos_dePaiva%20.pdff0180af842338f6037a7607988476aebMD51CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; charset=utf-8913https://repositorio.ufscar.br/bitstream/ufscar/18106/2/license_rdf3185b4de2190c2d366d1d324db01f8b8MD52TEXTTese_Aline_Bastos_dePaiva .pdf.txtTese_Aline_Bastos_dePaiva .pdf.txtExtracted texttext/plain203020https://repositorio.ufscar.br/bitstream/ufscar/18106/3/Tese_Aline_Bastos_dePaiva%20.pdf.txt1fc1738f40443c007106e670d0f2850dMD53THUMBNAILTese_Aline_Bastos_dePaiva .pdf.jpgTese_Aline_Bastos_dePaiva .pdf.jpgIM Thumbnailimage/jpeg6280https://repositorio.ufscar.br/bitstream/ufscar/18106/4/Tese_Aline_Bastos_dePaiva%20.pdf.jpgdd87bebd28a92e4b22b05d50cf8c88d7MD54ufscar/181062023-09-18 18:32:39.423oai:repositorio.ufscar.br:ufscar/18106Repositório InstitucionalPUBhttps://repositorio.ufscar.br/oai/requestopendoar:43222023-09-18T18:32:39Repositório Institucional da UFSCAR - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.por.fl_str_mv |
Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina |
dc.title.alternative.eng.fl_str_mv |
Influence of defects on the electrical functionalities of ZnO, AgO and polyaniline |
title |
Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina |
spellingShingle |
Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina de Paiva, Aline Bastos Polianilina Defeitos Fotocondução Memresistor ZnO AgO Polyaniline Defects Photoconduction Memresistor CIENCIAS EXATAS E DA TERRA::FISICA |
title_short |
Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina |
title_full |
Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina |
title_fullStr |
Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina |
title_full_unstemmed |
Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina |
title_sort |
Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina |
author |
de Paiva, Aline Bastos |
author_facet |
de Paiva, Aline Bastos |
author_role |
author |
dc.contributor.authorlattes.por.fl_str_mv |
http://lattes.cnpq.br/3108905407780000 |
dc.contributor.authororcid.por.fl_str_mv |
https://orcid.org/0000-0002-2383-1101 |
dc.contributor.advisor1orcid.por.fl_str_mv |
https://orcid.org/0000-0002-8376-8642 |
dc.contributor.author.fl_str_mv |
de Paiva, Aline Bastos |
dc.contributor.advisor1.fl_str_mv |
De Godoy, Marcio Peron Franco |
dc.contributor.advisor1Lattes.fl_str_mv |
http://lattes.cnpq.br/2609654784637427 |
dc.contributor.authorID.fl_str_mv |
03cf06b6-c719-4757-9d24-a8294ac48f4c |
contributor_str_mv |
De Godoy, Marcio Peron Franco |
dc.subject.por.fl_str_mv |
Polianilina Defeitos Fotocondução Memresistor ZnO AgO |
topic |
Polianilina Defeitos Fotocondução Memresistor ZnO AgO Polyaniline Defects Photoconduction Memresistor CIENCIAS EXATAS E DA TERRA::FISICA |
dc.subject.eng.fl_str_mv |
Polyaniline Defects Photoconduction Memresistor |
dc.subject.cnpq.fl_str_mv |
CIENCIAS EXATAS E DA TERRA::FISICA |
description |
The optical and electrical properties in a semiconductor can be modeled by structural defects. In this thesis, we study the influence of defects on the optical and electronic properties of organic and inorganic semiconductors in thin films form. Polyaniline (PANI), an organic conductive polymer, was synthesized by the chemical route and deposited on a glass substrate by casting technique. Though, the zinc and silver oxide films were produced by the spray pyrolysis technique. The zinc and silver concentrations were controlled using zinc acetate e silver nitrate concentrations in process synthesis. The films are polycrystalline, and it is noted that phase segregation when the silver nitrate is higher them 5%. The film has grown up just with silver nitrate was exhibit two phases: metallic silver (Ag) in the cubic structure and silver oxide (AgO) in the monoclinic structure. In ternary films, the absorption in the visible region referring to the surface plasmons of Ag is observed. In terms of luminescent properties, two emission bands are present: one, in the ultraviolet region, referring to emissions close to the conduction and valence bands, and another in the visible region, referring to defects. The PANI film has absorptions at 440 nm and 800 nm, characteristic of the salt emeraldine oxidation state, and emits in a broad visible band. The dynamics of photoconduction in PANI were analyzed using a rate equation model. While PANI and silver films showed photoresponses in the order of seconds, films containing Zn showed slow and persistent responses. We also observed the resistive memory effect on the longitudinal transport of ZnO when stimulated by a periodically applied voltage. The memory effect is dependent on the scan period and temperature, and we identified a critical period in the memory effect of 120 min. An increase in the memory effect is also observed with increasing temperature, modeled in terms of the energy barriers present in the crystallite boundaries of the film. |
publishDate |
2023 |
dc.date.accessioned.fl_str_mv |
2023-06-02T13:32:07Z |
dc.date.available.fl_str_mv |
2023-06-02T13:32:07Z |
dc.date.issued.fl_str_mv |
2023-03-03 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/doctoralThesis |
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doctoralThesis |
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publishedVersion |
dc.identifier.citation.fl_str_mv |
DE PAIVA, Aline Bastos. Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina. 2023. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2023. Disponível em: https://repositorio.ufscar.br/handle/ufscar/18106. |
dc.identifier.uri.fl_str_mv |
https://repositorio.ufscar.br/handle/ufscar/18106 |
identifier_str_mv |
DE PAIVA, Aline Bastos. Influência dos defeitos nas funcionalidades elétricas de ZnO, AgO e polianilina. 2023. Tese (Doutorado em Física) – Universidade Federal de São Carlos, São Carlos, 2023. Disponível em: https://repositorio.ufscar.br/handle/ufscar/18106. |
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https://repositorio.ufscar.br/handle/ufscar/18106 |
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Universidade Federal de São Carlos Câmpus São Carlos |
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UFSCar |
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