Monte Carlo simulation of hole transport in SiGe alloys

Detalhes bibliográficos
Autor(a) principal: Soares, Caroline dos Santos
Data de Publicação: 2021
Outros Autores: Rossetto, Alan Carlos Junior, Vasileska, Dragica, Wirth, Gilson Inacio
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/259719
Resumo: This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole bands were considered in their dispersion relation, while the split-off band was described as parabolic and spherical. We consider phonon and alloy disorder scattering in these calculations. The mobility of holes for a range of SiGe al-loys was calculated at 300K. The simulation mobility results agree with the experimental data, implying that the selected transport model for holes in SiGe alloys is adequate.
id UFRGS-2_23a2546d80e09a24b8ff264dff4d2a63
oai_identifier_str oai:www.lume.ufrgs.br:10183/259719
network_acronym_str UFRGS-2
network_name_str Repositório Institucional da UFRGS
repository_id_str
spelling Soares, Caroline dos SantosRossetto, Alan Carlos JuniorVasileska, DragicaWirth, Gilson Inacio2023-07-01T03:38:52Z20211807-1953http://hdl.handle.net/10183/259719001167829This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole bands were considered in their dispersion relation, while the split-off band was described as parabolic and spherical. We consider phonon and alloy disorder scattering in these calculations. The mobility of holes for a range of SiGe al-loys was calculated at 300K. The simulation mobility results agree with the experimental data, implying that the selected transport model for holes in SiGe alloys is adequate.application/pdfengJournal of integrated circuits and systems. Porto Alegre. Vol. 16, no. 1 (2021), p. 1-5MicroeletrônicaSimulação computacionalPerturbações de cargaEnsemble Monte CarloHole transportSiGe alloysAlloy disorder scatteringDispersion relationMonte Carlo simulation of hole transport in SiGe alloysinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/otherinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT001167829.pdf.txt001167829.pdf.txtExtracted Texttext/plain23878http://www.lume.ufrgs.br/bitstream/10183/259719/2/001167829.pdf.txt845e7423f69ba7bb40bec9093d8af7f3MD52ORIGINAL001167829.pdfTexto completo (inglês)application/pdf680331http://www.lume.ufrgs.br/bitstream/10183/259719/1/001167829.pdff571ec8a132c46b82ad180424af11b2aMD5110183/2597192023-07-02 03:41:20.224354oai:www.lume.ufrgs.br:10183/259719Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2023-07-02T06:41:20Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Monte Carlo simulation of hole transport in SiGe alloys
title Monte Carlo simulation of hole transport in SiGe alloys
spellingShingle Monte Carlo simulation of hole transport in SiGe alloys
Soares, Caroline dos Santos
Microeletrônica
Simulação computacional
Perturbações de carga
Ensemble Monte Carlo
Hole transport
SiGe alloys
Alloy disorder scattering
Dispersion relation
title_short Monte Carlo simulation of hole transport in SiGe alloys
title_full Monte Carlo simulation of hole transport in SiGe alloys
title_fullStr Monte Carlo simulation of hole transport in SiGe alloys
title_full_unstemmed Monte Carlo simulation of hole transport in SiGe alloys
title_sort Monte Carlo simulation of hole transport in SiGe alloys
author Soares, Caroline dos Santos
author_facet Soares, Caroline dos Santos
Rossetto, Alan Carlos Junior
Vasileska, Dragica
Wirth, Gilson Inacio
author_role author
author2 Rossetto, Alan Carlos Junior
Vasileska, Dragica
Wirth, Gilson Inacio
author2_role author
author
author
dc.contributor.author.fl_str_mv Soares, Caroline dos Santos
Rossetto, Alan Carlos Junior
Vasileska, Dragica
Wirth, Gilson Inacio
dc.subject.por.fl_str_mv Microeletrônica
Simulação computacional
Perturbações de carga
topic Microeletrônica
Simulação computacional
Perturbações de carga
Ensemble Monte Carlo
Hole transport
SiGe alloys
Alloy disorder scattering
Dispersion relation
dc.subject.eng.fl_str_mv Ensemble Monte Carlo
Hole transport
SiGe alloys
Alloy disorder scattering
Dispersion relation
description This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole bands were considered in their dispersion relation, while the split-off band was described as parabolic and spherical. We consider phonon and alloy disorder scattering in these calculations. The mobility of holes for a range of SiGe al-loys was calculated at 300K. The simulation mobility results agree with the experimental data, implying that the selected transport model for holes in SiGe alloys is adequate.
publishDate 2021
dc.date.issued.fl_str_mv 2021
dc.date.accessioned.fl_str_mv 2023-07-01T03:38:52Z
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/other
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/259719
dc.identifier.issn.pt_BR.fl_str_mv 1807-1953
dc.identifier.nrb.pt_BR.fl_str_mv 001167829
identifier_str_mv 1807-1953
001167829
url http://hdl.handle.net/10183/259719
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Journal of integrated circuits and systems. Porto Alegre. Vol. 16, no. 1 (2021), p. 1-5
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/259719/2/001167829.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/259719/1/001167829.pdf
bitstream.checksum.fl_str_mv 845e7423f69ba7bb40bec9093d8af7f3
f571ec8a132c46b82ad180424af11b2a
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv
_version_ 1801225090497511424

Registros relacionados