Electrical isolation of n-type and p-type InP layers by proton bombardment
Autor(a) principal: | |
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Data de Publicação: | 2001 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UFRGS |
Texto Completo: | http://hdl.handle.net/10183/95816 |
Resumo: | The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of -≈ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C. |
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Boudinov, Henri IvanovTan, Hoe H.Jagadish, Chenupati2014-05-31T02:06:39Z20010021-8979http://hdl.handle.net/10183/95816000292204The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of -≈ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C.application/pdfengJournal of applied physics. Melville. Vol. 89, no. 10 (May 2001), p. 5343-5347RecozimentoDefeitos anti-sítioDensidade de portadoresResistividade elétricaSemicondutores iii-vCompostos de indioEstabilidade térmicaElectrical isolation of n-type and p-type InP layers by proton bombardmentEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000292204.pdf000292204.pdfTexto completo (inglês)application/pdf229065http://www.lume.ufrgs.br/bitstream/10183/95816/1/000292204.pdf2c39e1745f24ba0a99fb2f69ee44c4a0MD51TEXT000292204.pdf.txt000292204.pdf.txtExtracted Texttext/plain24266http://www.lume.ufrgs.br/bitstream/10183/95816/2/000292204.pdf.txt5c277d112c94f873b6b76b4e6a3d9bd9MD52THUMBNAIL000292204.pdf.jpg000292204.pdf.jpgGenerated Thumbnailimage/jpeg1560http://www.lume.ufrgs.br/bitstream/10183/95816/3/000292204.pdf.jpg4bf815fcf761c4e2166ef86ed3ab75d9MD5310183/958162018-10-15 08:18:13.255oai:www.lume.ufrgs.br:10183/95816Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2018-10-15T11:18:13Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false |
dc.title.pt_BR.fl_str_mv |
Electrical isolation of n-type and p-type InP layers by proton bombardment |
title |
Electrical isolation of n-type and p-type InP layers by proton bombardment |
spellingShingle |
Electrical isolation of n-type and p-type InP layers by proton bombardment Boudinov, Henri Ivanov Recozimento Defeitos anti-sítio Densidade de portadores Resistividade elétrica Semicondutores iii-v Compostos de indio Estabilidade térmica |
title_short |
Electrical isolation of n-type and p-type InP layers by proton bombardment |
title_full |
Electrical isolation of n-type and p-type InP layers by proton bombardment |
title_fullStr |
Electrical isolation of n-type and p-type InP layers by proton bombardment |
title_full_unstemmed |
Electrical isolation of n-type and p-type InP layers by proton bombardment |
title_sort |
Electrical isolation of n-type and p-type InP layers by proton bombardment |
author |
Boudinov, Henri Ivanov |
author_facet |
Boudinov, Henri Ivanov Tan, Hoe H. Jagadish, Chenupati |
author_role |
author |
author2 |
Tan, Hoe H. Jagadish, Chenupati |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Boudinov, Henri Ivanov Tan, Hoe H. Jagadish, Chenupati |
dc.subject.por.fl_str_mv |
Recozimento Defeitos anti-sítio Densidade de portadores Resistividade elétrica Semicondutores iii-v Compostos de indio Estabilidade térmica |
topic |
Recozimento Defeitos anti-sítio Densidade de portadores Resistividade elétrica Semicondutores iii-v Compostos de indio Estabilidade térmica |
description |
The evolution of the sheet resistance (Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the replacement collisions are the carrier trapping centers, where InP is responsible for electron trapping and PIn for the hole trapping. A time dependence of the Rs was observed after each irradiation step to doses of -≈ Dth and higher. This time variation is related to metastable processes involving free carriers. The thermal stability of the isolation of n-type samples is limited to temperatures lower than 200 °C, irrespectively of the irradiated dose. For p-type samples the thermal stability of electrical isolation is extended to 450–500 °C. |
publishDate |
2001 |
dc.date.issued.fl_str_mv |
2001 |
dc.date.accessioned.fl_str_mv |
2014-05-31T02:06:39Z |
dc.type.driver.fl_str_mv |
Estrangeiro info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
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publishedVersion |
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http://hdl.handle.net/10183/95816 |
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0021-8979 |
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000292204 |
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http://hdl.handle.net/10183/95816 |
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eng |
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eng |
dc.relation.ispartof.pt_BR.fl_str_mv |
Journal of applied physics. Melville. Vol. 89, no. 10 (May 2001), p. 5343-5347 |
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openAccess |
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