Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices
Autor(a) principal: | |
---|---|
Data de Publicação: | 2019 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | LOCUS Repositório Institucional da UFV |
Texto Completo: | http://dx.doi.org/10.3762/bjnano.10.34 http://www.locus.ufv.br/handle/123456789/24483 |
Resumo: | The large-scale production of high-quality and clean graphene devices, aiming at technological applications, has been a great challenge over the last decade. This is due to the high affinity of graphene with polymers that are usually applied in standard lithography processes and that, inevitably, modify the electrical proprieties of graphene. By Raman spectroscopy and electrical-transport investigations, we correlate the room-temperature carrier mobility of graphene devices with the size of well-ordered domains in graphene. In addition, we show that the size of these well-ordered domains is highly influenced by post-photolithography cleaning processes. Finally, we show that by using poly(dimethylglutarimide) (PMGI) as a protection layer, the production yield of CVD graphene devices is enhanced. Conversely, their electrical properties are deteriorated as compared with devices fabricated by conventional production methods. |
id |
UFV_4fcee2c6d36a1083d8ef589c9892e1c6 |
---|---|
oai_identifier_str |
oai:locus.ufv.br:123456789/24483 |
network_acronym_str |
UFV |
network_name_str |
LOCUS Repositório Institucional da UFV |
repository_id_str |
2145 |
spelling |
Araujo, Eduardo Nery Duarte deSousa, Thiago Alonso Stephan Lacerda deGuimarães, Luciano de MouraPlentz, Flavio2019-04-11T14:24:49Z2019-04-11T14:24:49Z20192190-4286http://dx.doi.org/10.3762/bjnano.10.34http://www.locus.ufv.br/handle/123456789/24483The large-scale production of high-quality and clean graphene devices, aiming at technological applications, has been a great challenge over the last decade. This is due to the high affinity of graphene with polymers that are usually applied in standard lithography processes and that, inevitably, modify the electrical proprieties of graphene. By Raman spectroscopy and electrical-transport investigations, we correlate the room-temperature carrier mobility of graphene devices with the size of well-ordered domains in graphene. In addition, we show that the size of these well-ordered domains is highly influenced by post-photolithography cleaning processes. Finally, we show that by using poly(dimethylglutarimide) (PMGI) as a protection layer, the production yield of CVD graphene devices is enhanced. Conversely, their electrical properties are deteriorated as compared with devices fabricated by conventional production methods.engBeilstein Journal of Nanotechnologyv. 10, p. 349– 355, 2019CVD grapheneDefectsMobilityWell- ordered domainEffects of post-lithography cleaning on the yield and performance of CVD graphene-based devicesinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfinfo:eu-repo/semantics/openAccessreponame:LOCUS Repositório Institucional da UFVinstname:Universidade Federal de Viçosa (UFV)instacron:UFVORIGINALartigo.pdfartigo.pdftexto completoapplication/pdf1686149https://locus.ufv.br//bitstream/123456789/24483/1/artigo.pdf6deed0c503f20dc62e6632d7a9abb91bMD51LICENSElicense.txtlicense.txttext/plain; charset=utf-81748https://locus.ufv.br//bitstream/123456789/24483/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52123456789/244832019-04-11 11:26:57.671oai:locus.ufv.br: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Repositório InstitucionalPUBhttps://www.locus.ufv.br/oai/requestfabiojreis@ufv.bropendoar:21452019-04-11T14:26:57LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV)false |
dc.title.en.fl_str_mv |
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices |
title |
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices |
spellingShingle |
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices Araujo, Eduardo Nery Duarte de CVD graphene Defects Mobility Well- ordered domain |
title_short |
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices |
title_full |
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices |
title_fullStr |
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices |
title_full_unstemmed |
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices |
title_sort |
Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices |
author |
Araujo, Eduardo Nery Duarte de |
author_facet |
Araujo, Eduardo Nery Duarte de Sousa, Thiago Alonso Stephan Lacerda de Guimarães, Luciano de Moura Plentz, Flavio |
author_role |
author |
author2 |
Sousa, Thiago Alonso Stephan Lacerda de Guimarães, Luciano de Moura Plentz, Flavio |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Araujo, Eduardo Nery Duarte de Sousa, Thiago Alonso Stephan Lacerda de Guimarães, Luciano de Moura Plentz, Flavio |
dc.subject.pt-BR.fl_str_mv |
CVD graphene Defects Mobility Well- ordered domain |
topic |
CVD graphene Defects Mobility Well- ordered domain |
description |
The large-scale production of high-quality and clean graphene devices, aiming at technological applications, has been a great challenge over the last decade. This is due to the high affinity of graphene with polymers that are usually applied in standard lithography processes and that, inevitably, modify the electrical proprieties of graphene. By Raman spectroscopy and electrical-transport investigations, we correlate the room-temperature carrier mobility of graphene devices with the size of well-ordered domains in graphene. In addition, we show that the size of these well-ordered domains is highly influenced by post-photolithography cleaning processes. Finally, we show that by using poly(dimethylglutarimide) (PMGI) as a protection layer, the production yield of CVD graphene devices is enhanced. Conversely, their electrical properties are deteriorated as compared with devices fabricated by conventional production methods. |
publishDate |
2019 |
dc.date.accessioned.fl_str_mv |
2019-04-11T14:24:49Z |
dc.date.available.fl_str_mv |
2019-04-11T14:24:49Z |
dc.date.issued.fl_str_mv |
2019 |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.3762/bjnano.10.34 http://www.locus.ufv.br/handle/123456789/24483 |
dc.identifier.issn.none.fl_str_mv |
2190-4286 |
identifier_str_mv |
2190-4286 |
url |
http://dx.doi.org/10.3762/bjnano.10.34 http://www.locus.ufv.br/handle/123456789/24483 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.ispartofseries.pt-BR.fl_str_mv |
v. 10, p. 349– 355, 2019 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Beilstein Journal of Nanotechnology |
publisher.none.fl_str_mv |
Beilstein Journal of Nanotechnology |
dc.source.none.fl_str_mv |
reponame:LOCUS Repositório Institucional da UFV instname:Universidade Federal de Viçosa (UFV) instacron:UFV |
instname_str |
Universidade Federal de Viçosa (UFV) |
instacron_str |
UFV |
institution |
UFV |
reponame_str |
LOCUS Repositório Institucional da UFV |
collection |
LOCUS Repositório Institucional da UFV |
bitstream.url.fl_str_mv |
https://locus.ufv.br//bitstream/123456789/24483/1/artigo.pdf https://locus.ufv.br//bitstream/123456789/24483/2/license.txt |
bitstream.checksum.fl_str_mv |
6deed0c503f20dc62e6632d7a9abb91b 8a4605be74aa9ea9d79846c1fba20a33 |
bitstream.checksumAlgorithm.fl_str_mv |
MD5 MD5 |
repository.name.fl_str_mv |
LOCUS Repositório Institucional da UFV - Universidade Federal de Viçosa (UFV) |
repository.mail.fl_str_mv |
fabiojreis@ufv.br |
_version_ |
1801212996925521920 |