Design of an Inverter-Based OTA Based on a 130 nm CMOS Process

Detalhes bibliográficos
Autor(a) principal: Silva, Otávio Soares
Data de Publicação: 2020
Outros Autores: Braga, Rodrigo Aparecido da Silva, Karolak, Dean Bicudo, Silva, Paulo Marcio Moreira e
Tipo de documento: Artigo
Idioma: por
Título da fonte: Research, Society and Development
Texto Completo: https://rsdjournal.org/index.php/rsd/article/view/3334
Resumo: In manufacturing processes of integrated differential amplifiers, an inherent characteristic is that the fabricated nMOS and pMOS transistors have physical differences in relation to the projected values, an effect known as mismatch. In this work, the manufacturing process variations in operational transconductance amplifiers (OTA) are evaluated. Two OTA based on CMOS inverters are designed using both low threshold and standard threshold uniformly doped transistors using quantitative experimental research.
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spelling Design of an Inverter-Based OTA Based on a 130 nm CMOS ProcessProyecto de OTA Basado en Inversores en Procesos CMOS de 130 nmProjeto de um OTA Baseado em Inversores em Processo CMOS de 130 nmAmplificadores operacionaisInversores CMOSTranscondutância diferencialTensão thresholdDescasamento.Amplificadores operacionalesInversores CMOSTransconductancia diferencialThreshold voltajeMismatch.Operational amplifiersCMOS invertersDifferential transconductanceThreshold voltageMismatch.In manufacturing processes of integrated differential amplifiers, an inherent characteristic is that the fabricated nMOS and pMOS transistors have physical differences in relation to the projected values, an effect known as mismatch. In this work, the manufacturing process variations in operational transconductance amplifiers (OTA) are evaluated. Two OTA based on CMOS inverters are designed using both low threshold and standard threshold uniformly doped transistors using quantitative experimental research.En los procesos de fabricación de amplificadores diferenciales integrados, una característica inherente es que los transistores nMOS y pMOS incorporados tienen diferencias físicas en relación con los valores proyectados, un efecto conocido como mismatch. En este trabajo, se evaluará el impacto que los procesos de fabricación infligen en un amplificador operacional de transconductancia construido con transistores con canal uniformemente dopado y baja threshold voltaje y transistores de canal uniforme dopado con regular threshold voltaje utilizando investigación experimental cuantitativa.Nos processos de fabricação de amplificadores diferenciais integrados uma característica inerente é que os transistores nMOS e pMOS construídos possuam diferenças físicas em relação aos valores projetados, efeito conhecido como descasamento. Neste trabalho será avaliado o impacto que os processos de fabricação infligem em um amplificador operacional de transcondutância construído com transistores com canal uniformemente dopado e baixa tensão de threshold e transistores de canal uniformemente dopado com tensão de threshold regular utilizando uma pesquisa experimental quantitativa.Research, Society and Development2020-04-12info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://rsdjournal.org/index.php/rsd/article/view/333410.33448/rsd-v9i6.3334Research, Society and Development; Vol. 9 No. 6; e51963334Research, Society and Development; Vol. 9 Núm. 6; e51963334Research, Society and Development; v. 9 n. 6; e519633342525-3409reponame:Research, Society and Developmentinstname:Universidade Federal de Itajubá (UNIFEI)instacron:UNIFEIporhttps://rsdjournal.org/index.php/rsd/article/view/3334/3727Copyright (c) 2020 Otávio Soares Silva, Rodrigo Aparecido da Silva Braga, Dean Bicudo Karolak, Paulo Marcio Moreira e Silvainfo:eu-repo/semantics/openAccessSilva, Otávio SoaresBraga, Rodrigo Aparecido da SilvaKarolak, Dean BicudoSilva, Paulo Marcio Moreira e2020-08-20T18:05:46Zoai:ojs.pkp.sfu.ca:article/3334Revistahttps://rsdjournal.org/index.php/rsd/indexPUBhttps://rsdjournal.org/index.php/rsd/oairsd.articles@gmail.com2525-34092525-3409opendoar:2024-01-17T09:27:34.024237Research, Society and Development - Universidade Federal de Itajubá (UNIFEI)false
dc.title.none.fl_str_mv Design of an Inverter-Based OTA Based on a 130 nm CMOS Process
Proyecto de OTA Basado en Inversores en Procesos CMOS de 130 nm
Projeto de um OTA Baseado em Inversores em Processo CMOS de 130 nm
title Design of an Inverter-Based OTA Based on a 130 nm CMOS Process
spellingShingle Design of an Inverter-Based OTA Based on a 130 nm CMOS Process
Silva, Otávio Soares
Amplificadores operacionais
Inversores CMOS
Transcondutância diferencial
Tensão threshold
Descasamento.
Amplificadores operacionales
Inversores CMOS
Transconductancia diferencial
Threshold voltaje
Mismatch.
Operational amplifiers
CMOS inverters
Differential transconductance
Threshold voltage
Mismatch.
title_short Design of an Inverter-Based OTA Based on a 130 nm CMOS Process
title_full Design of an Inverter-Based OTA Based on a 130 nm CMOS Process
title_fullStr Design of an Inverter-Based OTA Based on a 130 nm CMOS Process
title_full_unstemmed Design of an Inverter-Based OTA Based on a 130 nm CMOS Process
title_sort Design of an Inverter-Based OTA Based on a 130 nm CMOS Process
author Silva, Otávio Soares
author_facet Silva, Otávio Soares
Braga, Rodrigo Aparecido da Silva
Karolak, Dean Bicudo
Silva, Paulo Marcio Moreira e
author_role author
author2 Braga, Rodrigo Aparecido da Silva
Karolak, Dean Bicudo
Silva, Paulo Marcio Moreira e
author2_role author
author
author
dc.contributor.author.fl_str_mv Silva, Otávio Soares
Braga, Rodrigo Aparecido da Silva
Karolak, Dean Bicudo
Silva, Paulo Marcio Moreira e
dc.subject.por.fl_str_mv Amplificadores operacionais
Inversores CMOS
Transcondutância diferencial
Tensão threshold
Descasamento.
Amplificadores operacionales
Inversores CMOS
Transconductancia diferencial
Threshold voltaje
Mismatch.
Operational amplifiers
CMOS inverters
Differential transconductance
Threshold voltage
Mismatch.
topic Amplificadores operacionais
Inversores CMOS
Transcondutância diferencial
Tensão threshold
Descasamento.
Amplificadores operacionales
Inversores CMOS
Transconductancia diferencial
Threshold voltaje
Mismatch.
Operational amplifiers
CMOS inverters
Differential transconductance
Threshold voltage
Mismatch.
description In manufacturing processes of integrated differential amplifiers, an inherent characteristic is that the fabricated nMOS and pMOS transistors have physical differences in relation to the projected values, an effect known as mismatch. In this work, the manufacturing process variations in operational transconductance amplifiers (OTA) are evaluated. Two OTA based on CMOS inverters are designed using both low threshold and standard threshold uniformly doped transistors using quantitative experimental research.
publishDate 2020
dc.date.none.fl_str_mv 2020-04-12
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://rsdjournal.org/index.php/rsd/article/view/3334
10.33448/rsd-v9i6.3334
url https://rsdjournal.org/index.php/rsd/article/view/3334
identifier_str_mv 10.33448/rsd-v9i6.3334
dc.language.iso.fl_str_mv por
language por
dc.relation.none.fl_str_mv https://rsdjournal.org/index.php/rsd/article/view/3334/3727
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Research, Society and Development
publisher.none.fl_str_mv Research, Society and Development
dc.source.none.fl_str_mv Research, Society and Development; Vol. 9 No. 6; e51963334
Research, Society and Development; Vol. 9 Núm. 6; e51963334
Research, Society and Development; v. 9 n. 6; e51963334
2525-3409
reponame:Research, Society and Development
instname:Universidade Federal de Itajubá (UNIFEI)
instacron:UNIFEI
instname_str Universidade Federal de Itajubá (UNIFEI)
instacron_str UNIFEI
institution UNIFEI
reponame_str Research, Society and Development
collection Research, Society and Development
repository.name.fl_str_mv Research, Society and Development - Universidade Federal de Itajubá (UNIFEI)
repository.mail.fl_str_mv rsd.articles@gmail.com
_version_ 1797052647603175424

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