Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor

Detalhes bibliográficos
Autor(a) principal: Mori, C. A. B.
Data de Publicação: 2019
Outros Autores: Agopian, P. G. D. [UNESP], Martino, J. A., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/195645
Resumo: In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.
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spelling Proposal of a p-type Back-Enhanced Tunnel Field Effect TransistorTunnel Field Effect Transistor (TFET)Silicon-On-Insulator (SOI)Ultra-Thin Body and Buried oxide (UTBB)In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Univ Sao Paulo, LSI PSI USP, Sao Paulo, BrazilSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, BrazilFAPESP: 2017/26489-7IeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Mori, C. A. B.Agopian, P. G. D. [UNESP]Martino, J. A.IEEE2020-12-10T17:58:55Z2020-12-10T17:58:55Z2019-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject32019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, 3 p., 2019.2330-5738http://hdl.handle.net/11449/195645WOS:000565067300054Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis)info:eu-repo/semantics/openAccess2021-10-23T10:18:16Zoai:repositorio.unesp.br:11449/195645Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:48:34.972466Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
spellingShingle Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
Mori, C. A. B.
Tunnel Field Effect Transistor (TFET)
Silicon-On-Insulator (SOI)
Ultra-Thin Body and Buried oxide (UTBB)
title_short Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title_full Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title_fullStr Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title_full_unstemmed Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title_sort Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
author Mori, C. A. B.
author_facet Mori, C. A. B.
Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
author_role author
author2 Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Mori, C. A. B.
Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
dc.subject.por.fl_str_mv Tunnel Field Effect Transistor (TFET)
Silicon-On-Insulator (SOI)
Ultra-Thin Body and Buried oxide (UTBB)
topic Tunnel Field Effect Transistor (TFET)
Silicon-On-Insulator (SOI)
Ultra-Thin Body and Buried oxide (UTBB)
description In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.
publishDate 2019
dc.date.none.fl_str_mv 2019-01-01
2020-12-10T17:58:55Z
2020-12-10T17:58:55Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, 3 p., 2019.
2330-5738
http://hdl.handle.net/11449/195645
WOS:000565067300054
identifier_str_mv 2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis). New York: Ieee, 3 p., 2019.
2330-5738
WOS:000565067300054
url http://hdl.handle.net/11449/195645
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2019 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128860612460544

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