Impact of biosensor permittivity on a double-gate nTFET ambipolar current

Detalhes bibliográficos
Autor(a) principal: Macambira, C. N.
Data de Publicação: 2018
Outros Autores: Agopian, P. G.D. [UNESP], Martino, J. A.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1149/08508.0187ecst
http://hdl.handle.net/11449/171227
Resumo: The goal of this work is to analyze the effect of gate to drain underlapping on n-type Tunnel-FET (nTFET) devices, filled with different dielectric permittivity material (k) in order to simulate the bio element materials. The results show that the use of Tunnel-FET ambipolar current presents high sensitivity for using it as biosensor devices for transistors with the drain underlap of 15 run and total channel length of 50 nm for the range studied in this paper.
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spelling Impact of biosensor permittivity on a double-gate nTFET ambipolar currentThe goal of this work is to analyze the effect of gate to drain underlapping on n-type Tunnel-FET (nTFET) devices, filled with different dielectric permittivity material (k) in order to simulate the bio element materials. The results show that the use of Tunnel-FET ambipolar current presents high sensitivity for using it as biosensor devices for transistors with the drain underlap of 15 run and total channel length of 50 nm for the range studied in this paper.LSI/PSI/USP University of Sao PauloSao Paulo State University (UNESP)Sao Paulo State University (UNESP)Universidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Macambira, C. N.Agopian, P. G.D. [UNESP]Martino, J. A.2018-12-11T16:54:29Z2018-12-11T16:54:29Z2018-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject187-192application/pdfhttp://dx.doi.org/10.1149/08508.0187ecstECS Transactions, v. 85, n. 8, p. 187-192, 2018.1938-58621938-6737http://hdl.handle.net/11449/17122710.1149/08508.0187ecst2-s2.0-850501507422-s2.0-85050150742.pdf04969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengECS Transactions0,2250,225info:eu-repo/semantics/openAccess2023-11-07T06:15:43Zoai:repositorio.unesp.br:11449/171227Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:07:03.658712Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Impact of biosensor permittivity on a double-gate nTFET ambipolar current
title Impact of biosensor permittivity on a double-gate nTFET ambipolar current
spellingShingle Impact of biosensor permittivity on a double-gate nTFET ambipolar current
Macambira, C. N.
title_short Impact of biosensor permittivity on a double-gate nTFET ambipolar current
title_full Impact of biosensor permittivity on a double-gate nTFET ambipolar current
title_fullStr Impact of biosensor permittivity on a double-gate nTFET ambipolar current
title_full_unstemmed Impact of biosensor permittivity on a double-gate nTFET ambipolar current
title_sort Impact of biosensor permittivity on a double-gate nTFET ambipolar current
author Macambira, C. N.
author_facet Macambira, C. N.
Agopian, P. G.D. [UNESP]
Martino, J. A.
author_role author
author2 Agopian, P. G.D. [UNESP]
Martino, J. A.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Macambira, C. N.
Agopian, P. G.D. [UNESP]
Martino, J. A.
description The goal of this work is to analyze the effect of gate to drain underlapping on n-type Tunnel-FET (nTFET) devices, filled with different dielectric permittivity material (k) in order to simulate the bio element materials. The results show that the use of Tunnel-FET ambipolar current presents high sensitivity for using it as biosensor devices for transistors with the drain underlap of 15 run and total channel length of 50 nm for the range studied in this paper.
publishDate 2018
dc.date.none.fl_str_mv 2018-12-11T16:54:29Z
2018-12-11T16:54:29Z
2018-01-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1149/08508.0187ecst
ECS Transactions, v. 85, n. 8, p. 187-192, 2018.
1938-5862
1938-6737
http://hdl.handle.net/11449/171227
10.1149/08508.0187ecst
2-s2.0-85050150742
2-s2.0-85050150742.pdf
0496909595465696
0000-0002-0886-7798
url http://dx.doi.org/10.1149/08508.0187ecst
http://hdl.handle.net/11449/171227
identifier_str_mv ECS Transactions, v. 85, n. 8, p. 187-192, 2018.
1938-5862
1938-6737
10.1149/08508.0187ecst
2-s2.0-85050150742
2-s2.0-85050150742.pdf
0496909595465696
0000-0002-0886-7798
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv ECS Transactions
0,225
0,225
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 187-192
application/pdf
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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