Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device

Detalhes bibliográficos
Autor(a) principal: Macambira, Christian N.
Data de Publicação: 2019
Outros Autores: Agopian, Paula G. D. [UNESP], Martino, Joao A., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/195392
Resumo: In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (t(Bio)). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to 1x10(20) cm(-3). The t(Bio) influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher t(Bio). The highest sensitivity value obtained in this work was for a drain doping concentration of 1x10(20) cm(-3) and for biomaterial thickness equal or higher than 40 nm.
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spelling Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET DeviceBiosensorTFETBiomaterial thicknessDrain dopingUnderlapSensitivityPermittivityIn this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (t(Bio)). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to 1x10(20) cm(-3). The t(Bio) influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher t(Bio). The highest sensitivity value obtained in this work was for a drain doping concentration of 1x10(20) cm(-3) and for biomaterial thickness equal or higher than 40 nm.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Univ Sao Paulo, LSI PSI USP, Sao Paulo, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Macambira, Christian N.Agopian, Paula G. D. [UNESP]Martino, Joao A.IEEE2020-12-10T17:33:07Z2020-12-10T17:33:07Z2019-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject42019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.http://hdl.handle.net/11449/195392WOS:000534490900049Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)info:eu-repo/semantics/openAccess2021-10-22T16:05:35Zoai:repositorio.unesp.br:11449/195392Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T19:34:11.960777Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
title Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
spellingShingle Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
Macambira, Christian N.
Biosensor
TFET
Biomaterial thickness
Drain doping
Underlap
Sensitivity
Permittivity
title_short Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
title_full Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
title_fullStr Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
title_full_unstemmed Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
title_sort Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device
author Macambira, Christian N.
author_facet Macambira, Christian N.
Agopian, Paula G. D. [UNESP]
Martino, Joao A.
IEEE
author_role author
author2 Agopian, Paula G. D. [UNESP]
Martino, Joao A.
IEEE
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Macambira, Christian N.
Agopian, Paula G. D. [UNESP]
Martino, Joao A.
IEEE
dc.subject.por.fl_str_mv Biosensor
TFET
Biomaterial thickness
Drain doping
Underlap
Sensitivity
Permittivity
topic Biosensor
TFET
Biomaterial thickness
Drain doping
Underlap
Sensitivity
Permittivity
description In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (t(Bio)). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to 1x10(20) cm(-3). The t(Bio) influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher t(Bio). The highest sensitivity value obtained in this work was for a drain doping concentration of 1x10(20) cm(-3) and for biomaterial thickness equal or higher than 40 nm.
publishDate 2019
dc.date.none.fl_str_mv 2019-01-01
2020-12-10T17:33:07Z
2020-12-10T17:33:07Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.
http://hdl.handle.net/11449/195392
WOS:000534490900049
identifier_str_mv 2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 4 p., 2019.
WOS:000534490900049
url http://hdl.handle.net/11449/195392
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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