Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1149/2162-8777/ac0ecb http://hdl.handle.net/11449/222065 |
Resumo: | An evaluation of a dielectrically modulated (DM) and a fringing field (FF) biosensor based on a tunneling field-effect transistor (Bio-TFET) by 2D numerical simulation is presented. The bio detection is based on the presence of a biomaterial with a distinct dielectric constant (k) on the sensitivity area. The performance of the devices is compared in terms of drain current in the ambipolar region (i.e., for negative gate voltage in an n-type Bio-nTFET device) due to the variation of the k, drain underlap length (LUD), and the presence of charges (QBio) into the biomaterial/silicon interface. The results show that the DM biosensor with LUD = 25 nm exhibits a higher sensitivity in all k simulated compared with FF biosensor, resulting in more than 2 orders of magnitude for k = 10. In the presence of charges, the DM shows a higher sensitivity in all of the range studied. Higher sensitivity values over a wider range of LUD and QBio are desirable and DM Bio-TFET achieves a better result compared with the FF Bio-TFET. Results show a new outlook for each type of biosensor. |
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Repositório Institucional da UNESP |
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2946 |
spelling |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors DevicesAn evaluation of a dielectrically modulated (DM) and a fringing field (FF) biosensor based on a tunneling field-effect transistor (Bio-TFET) by 2D numerical simulation is presented. The bio detection is based on the presence of a biomaterial with a distinct dielectric constant (k) on the sensitivity area. The performance of the devices is compared in terms of drain current in the ambipolar region (i.e., for negative gate voltage in an n-type Bio-nTFET device) due to the variation of the k, drain underlap length (LUD), and the presence of charges (QBio) into the biomaterial/silicon interface. The results show that the DM biosensor with LUD = 25 nm exhibits a higher sensitivity in all k simulated compared with FF biosensor, resulting in more than 2 orders of magnitude for k = 10. In the presence of charges, the DM shows a higher sensitivity in all of the range studied. Higher sensitivity values over a wider range of LUD and QBio are desirable and DM Bio-TFET achieves a better result compared with the FF Bio-TFET. Results show a new outlook for each type of biosensor.LSI/PSI/USP University of Sao PauloUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)Universidade Estadual Paulista (UNESP)Macambira, C. N.Agopian, P. G.D. [UNESP]Martino, J. A.2022-04-28T19:42:10Z2022-04-28T19:42:10Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1149/2162-8777/ac0ecbECS Journal of Solid State Science and Technology, v. 10, n. 7, 2021.2162-87772162-8769http://hdl.handle.net/11449/22206510.1149/2162-8777/ac0ecb2-s2.0-85111333037Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengECS Journal of Solid State Science and Technologyinfo:eu-repo/semantics/openAccess2022-04-28T19:42:10Zoai:repositorio.unesp.br:11449/222065Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T23:07:04.608534Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices |
title |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices |
spellingShingle |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices Macambira, C. N. |
title_short |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices |
title_full |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices |
title_fullStr |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices |
title_full_unstemmed |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices |
title_sort |
Evaluation of Dielectrically Modulated and Fringing Field Tunneling Field Effect Transistor Biosensors Devices |
author |
Macambira, C. N. |
author_facet |
Macambira, C. N. Agopian, P. G.D. [UNESP] Martino, J. A. |
author_role |
author |
author2 |
Agopian, P. G.D. [UNESP] Martino, J. A. |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (UNESP) |
dc.contributor.author.fl_str_mv |
Macambira, C. N. Agopian, P. G.D. [UNESP] Martino, J. A. |
description |
An evaluation of a dielectrically modulated (DM) and a fringing field (FF) biosensor based on a tunneling field-effect transistor (Bio-TFET) by 2D numerical simulation is presented. The bio detection is based on the presence of a biomaterial with a distinct dielectric constant (k) on the sensitivity area. The performance of the devices is compared in terms of drain current in the ambipolar region (i.e., for negative gate voltage in an n-type Bio-nTFET device) due to the variation of the k, drain underlap length (LUD), and the presence of charges (QBio) into the biomaterial/silicon interface. The results show that the DM biosensor with LUD = 25 nm exhibits a higher sensitivity in all k simulated compared with FF biosensor, resulting in more than 2 orders of magnitude for k = 10. In the presence of charges, the DM shows a higher sensitivity in all of the range studied. Higher sensitivity values over a wider range of LUD and QBio are desirable and DM Bio-TFET achieves a better result compared with the FF Bio-TFET. Results show a new outlook for each type of biosensor. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-01-01 2022-04-28T19:42:10Z 2022-04-28T19:42:10Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1149/2162-8777/ac0ecb ECS Journal of Solid State Science and Technology, v. 10, n. 7, 2021. 2162-8777 2162-8769 http://hdl.handle.net/11449/222065 10.1149/2162-8777/ac0ecb 2-s2.0-85111333037 |
url |
http://dx.doi.org/10.1149/2162-8777/ac0ecb http://hdl.handle.net/11449/222065 |
identifier_str_mv |
ECS Journal of Solid State Science and Technology, v. 10, n. 7, 2021. 2162-8777 2162-8769 10.1149/2162-8777/ac0ecb 2-s2.0-85111333037 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
ECS Journal of Solid State Science and Technology |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129491075072000 |