Impact of process and device dimensions on Bio-TFET Sensitivity

Detalhes bibliográficos
Autor(a) principal: Macambira, C. N.
Data de Publicação: 2018
Outros Autores: Agopian, P. G. D. [UNESP], Martino, J. A., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/186352
Resumo: This paper reports the impact of process and dimensions on the sensitivity of the double gate Bio-TFET for drain and source underlap structures. The Bio-TFET is simulated using different dielectric permittivity materials (epsilon) localized over the drain to gate and gate to source underlap regions. The impact of silicon thickness (t(Si)), gate oxide (t(ox)), underlap length at the source (L-US) and at the drain region (L-UD) were studied. The best sensitivity for Bio-TFET biosensor is obtained for the source underlap (L-US) of 25 nm, channel silicon thickness of 5 nm and gate oxide thickness of 3 nm. The energy band diagram and the band-to-band tunneling generation rate were used to explain the results.
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spelling Impact of process and device dimensions on Bio-TFET SensitivityTFETBiosensorBio-TFETTunnel-FETThis paper reports the impact of process and dimensions on the sensitivity of the double gate Bio-TFET for drain and source underlap structures. The Bio-TFET is simulated using different dielectric permittivity materials (epsilon) localized over the drain to gate and gate to source underlap regions. The impact of silicon thickness (t(Si)), gate oxide (t(ox)), underlap length at the source (L-US) and at the drain region (L-UD) were studied. The best sensitivity for Bio-TFET biosensor is obtained for the source underlap (L-US) of 25 nm, channel silicon thickness of 5 nm and gate oxide thickness of 3 nm. The energy band diagram and the band-to-band tunneling generation rate were used to explain the results.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Univ Sao Paulo, LSI, PSI, Sao Paulo, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Macambira, C. N.Agopian, P. G. D. [UNESP]Martino, J. A.IEEE2019-10-04T19:12:05Z2019-10-04T19:12:05Z2018-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject32018 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2018.2573-5926http://hdl.handle.net/11449/186352WOS:000462960700023Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2018 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s)info:eu-repo/semantics/openAccess2021-10-23T19:49:58Zoai:repositorio.unesp.br:11449/186352Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:54:21.216156Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Impact of process and device dimensions on Bio-TFET Sensitivity
title Impact of process and device dimensions on Bio-TFET Sensitivity
spellingShingle Impact of process and device dimensions on Bio-TFET Sensitivity
Macambira, C. N.
TFET
Biosensor
Bio-TFET
Tunnel-FET
title_short Impact of process and device dimensions on Bio-TFET Sensitivity
title_full Impact of process and device dimensions on Bio-TFET Sensitivity
title_fullStr Impact of process and device dimensions on Bio-TFET Sensitivity
title_full_unstemmed Impact of process and device dimensions on Bio-TFET Sensitivity
title_sort Impact of process and device dimensions on Bio-TFET Sensitivity
author Macambira, C. N.
author_facet Macambira, C. N.
Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
author_role author
author2 Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Macambira, C. N.
Agopian, P. G. D. [UNESP]
Martino, J. A.
IEEE
dc.subject.por.fl_str_mv TFET
Biosensor
Bio-TFET
Tunnel-FET
topic TFET
Biosensor
Bio-TFET
Tunnel-FET
description This paper reports the impact of process and dimensions on the sensitivity of the double gate Bio-TFET for drain and source underlap structures. The Bio-TFET is simulated using different dielectric permittivity materials (epsilon) localized over the drain to gate and gate to source underlap regions. The impact of silicon thickness (t(Si)), gate oxide (t(ox)), underlap length at the source (L-US) and at the drain region (L-UD) were studied. The best sensitivity for Bio-TFET biosensor is obtained for the source underlap (L-US) of 25 nm, channel silicon thickness of 5 nm and gate oxide thickness of 3 nm. The energy band diagram and the band-to-band tunneling generation rate were used to explain the results.
publishDate 2018
dc.date.none.fl_str_mv 2018-01-01
2019-10-04T19:12:05Z
2019-10-04T19:12:05Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2018 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2018.
2573-5926
http://hdl.handle.net/11449/186352
WOS:000462960700023
identifier_str_mv 2018 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2018.
2573-5926
WOS:000462960700023
url http://hdl.handle.net/11449/186352
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2018 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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