Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor

Detalhes bibliográficos
Autor(a) principal: Mori, C. A.B.
Data de Publicação: 2019
Outros Autores: Agopian, P. G.D. [UNESP], Martino, J. A.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/EUROSOI-ULIS45800.2019.9041908
http://hdl.handle.net/11449/198580
Resumo: In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.
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spelling Proposal of a p-type Back-Enhanced Tunnel Field Effect TransistorSilicon-On-Insulator (SOI)Tunnel Field Effect Transistor (TFET)Ultra-Thin Body and Buried oxide (UTBB)In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.LSI/PSI/USP University of Sao PauloSao Paulo State University (UNESP)Sao Paulo State University (UNESP)Universidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)Mori, C. A.B.Agopian, P. G.D. [UNESP]Martino, J. A.2020-12-12T01:16:45Z2020-12-12T01:16:45Z2019-04-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/EUROSOI-ULIS45800.2019.90419082019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019.http://hdl.handle.net/11449/19858010.1109/EUROSOI-ULIS45800.2019.90419082-s2.0-85080744450Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019info:eu-repo/semantics/openAccess2021-10-22T17:02:40Zoai:repositorio.unesp.br:11449/198580Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:41:29.746963Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
spellingShingle Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
Mori, C. A.B.
Silicon-On-Insulator (SOI)
Tunnel Field Effect Transistor (TFET)
Ultra-Thin Body and Buried oxide (UTBB)
title_short Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title_full Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title_fullStr Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title_full_unstemmed Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
title_sort Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
author Mori, C. A.B.
author_facet Mori, C. A.B.
Agopian, P. G.D. [UNESP]
Martino, J. A.
author_role author
author2 Agopian, P. G.D. [UNESP]
Martino, J. A.
author2_role author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Mori, C. A.B.
Agopian, P. G.D. [UNESP]
Martino, J. A.
dc.subject.por.fl_str_mv Silicon-On-Insulator (SOI)
Tunnel Field Effect Transistor (TFET)
Ultra-Thin Body and Buried oxide (UTBB)
topic Silicon-On-Insulator (SOI)
Tunnel Field Effect Transistor (TFET)
Ultra-Thin Body and Buried oxide (UTBB)
description In this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.
publishDate 2019
dc.date.none.fl_str_mv 2019-04-01
2020-12-12T01:16:45Z
2020-12-12T01:16:45Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/EUROSOI-ULIS45800.2019.9041908
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019.
http://hdl.handle.net/11449/198580
10.1109/EUROSOI-ULIS45800.2019.9041908
2-s2.0-85080744450
url http://dx.doi.org/10.1109/EUROSOI-ULIS45800.2019.9041908
http://hdl.handle.net/11449/198580
identifier_str_mv 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019.
10.1109/EUROSOI-ULIS45800.2019.9041908
2-s2.0-85080744450
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129347088809984

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