Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy
Autor(a) principal: | |
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Data de Publicação: | 2003 |
Outros Autores: | , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000400026 |
Resumo: | Bi4Ge3O12 (bismuth germanate - BGO) single crystals were produced by the Czochralski technique and their electrical and dielectric properties were investigated by impedance spectroscopy. The isothermal ac measurements were performed for temperatures from room temperature up to 750 °C, but only the data taken above 500 °C presented a complete semicircle in the complex impedance diagrams. Experimental data were fitted to a parallel RC equivalent circuit, and the electrical conductivity was obtained from the resistivity values. Conductivity values from 5.4 × 10(9) to 4.3 × 10-7 S/cm were found in the temperature range of 500 to 750 °C. This electrical conductivity is thermally activated, following the Arrhenius law with an apparent activation energy of (1.41 ± 0.04) eV. The dielectric properties of BGO single crystal were also studied for the same temperature interval. Permittivity values of 20 ± 2 for frequencies higher than 10³ Hz and a low-frequency dispersion were observed. Both electric and dielectric behavior of BGO are typical of systems in which the conduction mechanism dominates the dielectric response. |
id |
ABMABCABPOL-1_6a3599ecec70b3079f93584e064fb2db |
---|---|
oai_identifier_str |
oai:scielo:S1516-14392003000400026 |
network_acronym_str |
ABMABCABPOL-1 |
network_name_str |
Materials research (São Carlos. Online) |
repository_id_str |
|
spelling |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopybismuth germanateimpedance spectroscopyBi4Ge3O12 (bismuth germanate - BGO) single crystals were produced by the Czochralski technique and their electrical and dielectric properties were investigated by impedance spectroscopy. The isothermal ac measurements were performed for temperatures from room temperature up to 750 °C, but only the data taken above 500 °C presented a complete semicircle in the complex impedance diagrams. Experimental data were fitted to a parallel RC equivalent circuit, and the electrical conductivity was obtained from the resistivity values. Conductivity values from 5.4 × 10(9) to 4.3 × 10-7 S/cm were found in the temperature range of 500 to 750 °C. This electrical conductivity is thermally activated, following the Arrhenius law with an apparent activation energy of (1.41 ± 0.04) eV. The dielectric properties of BGO single crystal were also studied for the same temperature interval. Permittivity values of 20 ± 2 for frequencies higher than 10³ Hz and a low-frequency dispersion were observed. Both electric and dielectric behavior of BGO are typical of systems in which the conduction mechanism dominates the dielectric response.ABM, ABC, ABPol2003-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000400026Materials Research v.6 n.4 2003reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392003000400026info:eu-repo/semantics/openAccessMacedo,Zélia SoaresMartinez,André LuizHernandes,Antonio Carloseng2004-01-19T00:00:00Zoai:scielo:S1516-14392003000400026Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2004-01-19T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy |
title |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy |
spellingShingle |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy Macedo,Zélia Soares bismuth germanate impedance spectroscopy |
title_short |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy |
title_full |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy |
title_fullStr |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy |
title_full_unstemmed |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy |
title_sort |
Characterization of Bi4Ge3O12 single crystal by impedance spectroscopy |
author |
Macedo,Zélia Soares |
author_facet |
Macedo,Zélia Soares Martinez,André Luiz Hernandes,Antonio Carlos |
author_role |
author |
author2 |
Martinez,André Luiz Hernandes,Antonio Carlos |
author2_role |
author author |
dc.contributor.author.fl_str_mv |
Macedo,Zélia Soares Martinez,André Luiz Hernandes,Antonio Carlos |
dc.subject.por.fl_str_mv |
bismuth germanate impedance spectroscopy |
topic |
bismuth germanate impedance spectroscopy |
description |
Bi4Ge3O12 (bismuth germanate - BGO) single crystals were produced by the Czochralski technique and their electrical and dielectric properties were investigated by impedance spectroscopy. The isothermal ac measurements were performed for temperatures from room temperature up to 750 °C, but only the data taken above 500 °C presented a complete semicircle in the complex impedance diagrams. Experimental data were fitted to a parallel RC equivalent circuit, and the electrical conductivity was obtained from the resistivity values. Conductivity values from 5.4 × 10(9) to 4.3 × 10-7 S/cm were found in the temperature range of 500 to 750 °C. This electrical conductivity is thermally activated, following the Arrhenius law with an apparent activation energy of (1.41 ± 0.04) eV. The dielectric properties of BGO single crystal were also studied for the same temperature interval. Permittivity values of 20 ± 2 for frequencies higher than 10³ Hz and a low-frequency dispersion were observed. Both electric and dielectric behavior of BGO are typical of systems in which the conduction mechanism dominates the dielectric response. |
publishDate |
2003 |
dc.date.none.fl_str_mv |
2003-12-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000400026 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000400026 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S1516-14392003000400026 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.6 n.4 2003 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212657400905728 |