Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors

Detalhes bibliográficos
Autor(a) principal: Manoel,E.R.
Data de Publicação: 1999
Outros Autores: Custódio,M.C.C., Guimarães,F.E.G., Bianchi,R.F., Hernandes,A.C.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200006
Resumo: This paper presents a methodology for the preparation of <FONT FACE="Symbol">a</font>-HgI2 by Physical Vapor Transport and of PbI2 crystals using the Bridgman technique. The results of the growth of HgI2 diluted in PbI2 by the Bridgman technique are shown for the first time, its limit of solubility having been determined at 600 ppm of HgI2 in the PbI2 matrix. Optical absorption, photoluminescence and electrical conductivity measurements show that the crystals prepared are of good crystalline quality.
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spelling Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductorsmercuric iodidelead iodidecrystal growthThis paper presents a methodology for the preparation of <FONT FACE="Symbol">a</font>-HgI2 by Physical Vapor Transport and of PbI2 crystals using the Bridgman technique. The results of the growth of HgI2 diluted in PbI2 by the Bridgman technique are shown for the first time, its limit of solubility having been determined at 600 ppm of HgI2 in the PbI2 matrix. Optical absorption, photoluminescence and electrical conductivity measurements show that the crystals prepared are of good crystalline quality.ABM, ABC, ABPol1999-04-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200006Materials Research v.2 n.2 1999reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14391999000200006info:eu-repo/semantics/openAccessManoel,E.R.Custódio,M.C.C.Guimarães,F.E.G.Bianchi,R.F.Hernandes,A.C.eng2000-01-21T00:00:00Zoai:scielo:S1516-14391999000200006Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2000-01-21T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
title Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
spellingShingle Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
Manoel,E.R.
mercuric iodide
lead iodide
crystal growth
title_short Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
title_full Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
title_fullStr Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
title_full_unstemmed Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
title_sort Growth and characterization of HgI2, PbI2 and PbI2:HgI2 layered semiconductors
author Manoel,E.R.
author_facet Manoel,E.R.
Custódio,M.C.C.
Guimarães,F.E.G.
Bianchi,R.F.
Hernandes,A.C.
author_role author
author2 Custódio,M.C.C.
Guimarães,F.E.G.
Bianchi,R.F.
Hernandes,A.C.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Manoel,E.R.
Custódio,M.C.C.
Guimarães,F.E.G.
Bianchi,R.F.
Hernandes,A.C.
dc.subject.por.fl_str_mv mercuric iodide
lead iodide
crystal growth
topic mercuric iodide
lead iodide
crystal growth
description This paper presents a methodology for the preparation of <FONT FACE="Symbol">a</font>-HgI2 by Physical Vapor Transport and of PbI2 crystals using the Bridgman technique. The results of the growth of HgI2 diluted in PbI2 by the Bridgman technique are shown for the first time, its limit of solubility having been determined at 600 ppm of HgI2 in the PbI2 matrix. Optical absorption, photoluminescence and electrical conductivity measurements show that the crystals prepared are of good crystalline quality.
publishDate 1999
dc.date.none.fl_str_mv 1999-04-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200006
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14391999000200006
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S1516-14391999000200006
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.2 n.2 1999
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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