Boron doped diamond thin films on large area Ti6Al4V substrates for electrochemical application

• Autor(a) principal: Diniz,Alessandra V.
• Data de Publicação: 2003
• Outros Autores: Ferreira,Neidenêi G., Corat,Evaldo J., Trava-Airoldi,Vladimir J.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Materials research (São Carlos. Online)
• Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392003000100011
• topic: boron doped-diamond; Ti6Al4V; electrochemistry

Boron doped diamond thin films were grown on titanium alloy substrates (Ti6Al4V) with 36 × 35 × 1.3 mm at 873-933 K at 6.5 × 10³ Pa during 8 h by hot filament CVD assisted technique. The boron source was obtained from a H2 line forced to pass through a bubbler containing B2O3 dissolved in methanol (B\C = 6000 ppm). The films were grown on both sides of perforated and non-perforated substrates. Emphasis for diamond growing on perforated substrates have been done in order to increase the active surface area and hereafter to promote an easier electrolyte flow for wastewater treatment. The electrode performance was determined by cyclic voltammetry measurements in KCl, KNO3, Na2SO4, HCl, HNO3 and H2SO4 solutions and the reversibility behavior of the Fe(CN)6(3-/4-) at the Ti6Al4V/Diamond electrode were studied. Also, Scaning Electron Microcopy and Raman Scattering Spectroscopy were used for morphology and diamond quality evaluation, respectively.