Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , |
Tipo de documento: | Artigo de conferência |
Título da fonte: | Repositório Institucional do IPEN |
Texto Completo: | http://repositorio.ipen.br/handle/123456789/33064 |
Resumo: | A new double line waveguide architecture produced in Nd3+ doped GeO2-PbO glasses is presented for photonic applications. These glasses produced with the melt quenching technique have interesting characteristics that make them attractive for photonic applications: large transmission window (400???5000 nm), large polarizability, low melting temperature (1200?? C) with respect to silicates, low cut-off phonon energy (~800 cm-1), large mechanical resistance, high chemical durability and high refractive index (~2.0). The double line waveguides are written directly into Nd3+ doped GeO2-PbO glasses using a Ti:Sapphire femtosecond (fs) laser, operating at 800 nm, delivering 30 fs pulses at 10 kHz repetition rate. The two written lines that form the double waveguide are formed by several collinearly overlapping lines. Results of the output mode profile, the M2 beam quality factor at 632 and 1064 nm and refractive index change are presented, as well as the parameters used for laser writing. Double waveguides written with 4 and 8 overlapping lines, writing speed of 0.5 mm/s and pulse energy of 30 ??J demonstrated to be adequate parameters for writing; refractive index changes of ~10-3 were found at 632 nm for all the cases. The present results demonstrated that Nd3+ doped GeO2-PbO glasses with the new double line waveguide architecture are promising materials for the fabrication of passive and active components for photonic applications. Further investigation will focus on the influence of the writing parameters on the optical performance of the different waveguides, and evaluate the potential of the materials as optical amplifiers at 1064 nm. |
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GARCIA-BLANCO, SONIA M.CHEBEN, PAVELBORDON, CAMILA D.S.WETTER, NIKLAUS U.ROSSI, WAGNER deKASSAB, LUCIANA R.P.SPIE PHOTONICS WEST; SPIE OPTO2022-05-09T19:09:47Z2022-05-09T19:09:47ZJanuary 22 - February 28, 2022http://repositorio.ipen.br/handle/123456789/3306410.1117/12.26101550000-0003-1371-75210000-0002-9379-9530A new double line waveguide architecture produced in Nd3+ doped GeO2-PbO glasses is presented for photonic applications. These glasses produced with the melt quenching technique have interesting characteristics that make them attractive for photonic applications: large transmission window (400???5000 nm), large polarizability, low melting temperature (1200?? C) with respect to silicates, low cut-off phonon energy (~800 cm-1), large mechanical resistance, high chemical durability and high refractive index (~2.0). The double line waveguides are written directly into Nd3+ doped GeO2-PbO glasses using a Ti:Sapphire femtosecond (fs) laser, operating at 800 nm, delivering 30 fs pulses at 10 kHz repetition rate. The two written lines that form the double waveguide are formed by several collinearly overlapping lines. Results of the output mode profile, the M2 beam quality factor at 632 and 1064 nm and refractive index change are presented, as well as the parameters used for laser writing. Double waveguides written with 4 and 8 overlapping lines, writing speed of 0.5 mm/s and pulse energy of 30 ??J demonstrated to be adequate parameters for writing; refractive index changes of ~10-3 were found at 632 nm for all the cases. The present results demonstrated that Nd3+ doped GeO2-PbO glasses with the new double line waveguide architecture are promising materials for the fabrication of passive and active components for photonic applications. Further investigation will focus on the influence of the writing parameters on the optical performance of the different waveguides, and evaluate the potential of the materials as optical amplifiers at 1064 nm.Submitted by Pedro Silva Filho (pfsilva@ipen.br) on 2022-05-09T19:09:46Z No. of bitstreams: 1 28757.pdf: 454730 bytes, checksum: c585a11eab66c87fee43d0317d071587 (MD5)Made available in DSpace on 2022-05-09T19:09:47Z (GMT). No. of bitstreams: 1 28757.pdf: 454730 bytes, checksum: c585a11eab66c87fee43d0317d071587 (MD5)Funda????o de Amparo ?? Pesquisa do Estado de S??o Paulo (FAPESP)Conselho Nacional de Desenvolvimento Cient??fico e Tecnol??gico (CNPq)FAPESP: 13/26113-6CNPq: INFO 465763/2014-6; 440228/2021-2120040Y-1 - 120040Y-6SPIEProceedings SPIE 12004, Integrated Optics: Devices, Materials, and Technologies XXVI91973600600optical systemswaveguideslasersprocessinggermanatesglassFs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applicationsinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjectIBellingham, WA, USASan Francisco, CA, USAinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional do IPENinstname:Instituto de Pesquisas Energéticas e Nucleares (IPEN)instacron:IPEN287572022ROSSI, WAGNER deWETTER, NIKLAUS U.22-05Proceedings73919ROSSI, WAGNER de:73:920:NWETTER, NIKLAUS U.:919:910:NLICENSElicense.txtlicense.txttext/plain; charset=utf-81748http://repositorio.ipen.br/bitstream/123456789/33064/2/license.txt8a4605be74aa9ea9d79846c1fba20a33MD52ORIGINAL28757.pdf28757.pdfapplication/pdf454730http://repositorio.ipen.br/bitstream/123456789/33064/1/28757.pdfc585a11eab66c87fee43d0317d071587MD51123456789/330642022-05-20 14:30:58.405oai:repositorio.ipen.br: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Repositório InstitucionalPUBhttp://repositorio.ipen.br/oai/requestbibl@ipen.bropendoar:45102022-05-20T14:30:58Repositório Institucional do IPEN - Instituto de Pesquisas Energéticas e Nucleares (IPEN)false |
dc.title.pt_BR.fl_str_mv |
Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications |
title |
Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications |
spellingShingle |
Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications BORDON, CAMILA D.S. optical systems waveguides lasers processing germanates glass |
title_short |
Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications |
title_full |
Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications |
title_fullStr |
Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications |
title_full_unstemmed |
Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications |
title_sort |
Fs laser writing in Nd3+ doped GeO2-PbO glasses for the production of a new double line waveguide architecture for photonic applications |
author |
BORDON, CAMILA D.S. |
author_facet |
BORDON, CAMILA D.S. WETTER, NIKLAUS U. ROSSI, WAGNER de KASSAB, LUCIANA R.P. SPIE PHOTONICS WEST; SPIE OPTO |
author_role |
author |
author2 |
WETTER, NIKLAUS U. ROSSI, WAGNER de KASSAB, LUCIANA R.P. SPIE PHOTONICS WEST; SPIE OPTO |
author2_role |
author author author author |
dc.contributor.editor.pt_BR.fl_str_mv |
GARCIA-BLANCO, SONIA M. CHEBEN, PAVEL |
dc.contributor.author.fl_str_mv |
BORDON, CAMILA D.S. WETTER, NIKLAUS U. ROSSI, WAGNER de KASSAB, LUCIANA R.P. SPIE PHOTONICS WEST; SPIE OPTO |
dc.subject.por.fl_str_mv |
optical systems waveguides lasers processing germanates glass |
topic |
optical systems waveguides lasers processing germanates glass |
description |
A new double line waveguide architecture produced in Nd3+ doped GeO2-PbO glasses is presented for photonic applications. These glasses produced with the melt quenching technique have interesting characteristics that make them attractive for photonic applications: large transmission window (400???5000 nm), large polarizability, low melting temperature (1200?? C) with respect to silicates, low cut-off phonon energy (~800 cm-1), large mechanical resistance, high chemical durability and high refractive index (~2.0). The double line waveguides are written directly into Nd3+ doped GeO2-PbO glasses using a Ti:Sapphire femtosecond (fs) laser, operating at 800 nm, delivering 30 fs pulses at 10 kHz repetition rate. The two written lines that form the double waveguide are formed by several collinearly overlapping lines. Results of the output mode profile, the M2 beam quality factor at 632 and 1064 nm and refractive index change are presented, as well as the parameters used for laser writing. Double waveguides written with 4 and 8 overlapping lines, writing speed of 0.5 mm/s and pulse energy of 30 ??J demonstrated to be adequate parameters for writing; refractive index changes of ~10-3 were found at 632 nm for all the cases. The present results demonstrated that Nd3+ doped GeO2-PbO glasses with the new double line waveguide architecture are promising materials for the fabrication of passive and active components for photonic applications. Further investigation will focus on the influence of the writing parameters on the optical performance of the different waveguides, and evaluate the potential of the materials as optical amplifiers at 1064 nm. |
publishDate |
2022 |
dc.date.evento.pt_BR.fl_str_mv |
January 22 - February 28, 2022 |
dc.date.accessioned.fl_str_mv |
2022-05-09T19:09:47Z |
dc.date.available.fl_str_mv |
2022-05-09T19:09:47Z |
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info:eu-repo/semantics/publishedVersion |
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http://repositorio.ipen.br/handle/123456789/33064 |
dc.identifier.doi.pt_BR.fl_str_mv |
10.1117/12.2610155 |
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0000-0003-1371-7521 0000-0002-9379-9530 |
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10.1117/12.2610155 0000-0003-1371-7521 0000-0002-9379-9530 |
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Proceedings SPIE 12004, Integrated Optics: Devices, Materials, and Technologies XXVI |
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openAccess |
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120040Y-1 - 120040Y-6 |
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