Minority anion substitution by Ni in ZnO

Detalhes bibliográficos
Autor(a) principal: Pereira, L. M. C.
Data de Publicação: 2013
Outros Autores: Wahl, U., Correia, J. G., Amorim, L. M., Silva, D. J., Bosne, E., Decoster, S., da Silva, M. R., Temst, K., Vantomme, A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/20079
Resumo: We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC.
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spelling Minority anion substitution by Ni in ZnOMAGNETIC SEMICONDUCTORSEMISSIONDETECTORSWe report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC.AMER INST PHYSICS2017-12-07T19:34:45Z2013-01-01T00:00:00Z2013info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/20079eng0003-695110.1063/1.4820254Pereira, L. M. C.Wahl, U.Correia, J. G.Amorim, L. M.Silva, D. J.Bosne, E.Decoster, S.da Silva, M. R.Temst, K.Vantomme, A.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-17T03:50:30ZPortal AgregadorONG
dc.title.none.fl_str_mv Minority anion substitution by Ni in ZnO
title Minority anion substitution by Ni in ZnO
spellingShingle Minority anion substitution by Ni in ZnO
Pereira, L. M. C.
MAGNETIC SEMICONDUCTORS
EMISSION
DETECTORS
title_short Minority anion substitution by Ni in ZnO
title_full Minority anion substitution by Ni in ZnO
title_fullStr Minority anion substitution by Ni in ZnO
title_full_unstemmed Minority anion substitution by Ni in ZnO
title_sort Minority anion substitution by Ni in ZnO
author Pereira, L. M. C.
author_facet Pereira, L. M. C.
Wahl, U.
Correia, J. G.
Amorim, L. M.
Silva, D. J.
Bosne, E.
Decoster, S.
da Silva, M. R.
Temst, K.
Vantomme, A.
author_role author
author2 Wahl, U.
Correia, J. G.
Amorim, L. M.
Silva, D. J.
Bosne, E.
Decoster, S.
da Silva, M. R.
Temst, K.
Vantomme, A.
author2_role author
author
author
author
author
author
author
author
author
dc.contributor.author.fl_str_mv Pereira, L. M. C.
Wahl, U.
Correia, J. G.
Amorim, L. M.
Silva, D. J.
Bosne, E.
Decoster, S.
da Silva, M. R.
Temst, K.
Vantomme, A.
dc.subject.por.fl_str_mv MAGNETIC SEMICONDUCTORS
EMISSION
DETECTORS
topic MAGNETIC SEMICONDUCTORS
EMISSION
DETECTORS
description We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC.
publishDate 2013
dc.date.none.fl_str_mv 2013-01-01T00:00:00Z
2013
2017-12-07T19:34:45Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/20079
url http://hdl.handle.net/10773/20079
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0003-6951
10.1063/1.4820254
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AMER INST PHYSICS
publisher.none.fl_str_mv AMER INST PHYSICS
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
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