Optical modulation spectroscopy of hydrogenated microcrystalline silicon

Detalhes bibliográficos
Autor(a) principal: Cerqueira, M. F.
Data de Publicação: 1997
Outros Autores: Jansen, John A., Adriaenssens, G. J., Ferreira, J. A.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/14199
Resumo: The properties of microcrystalline silicon thin films prepared by RF sputtering were investigated by optical modulation spectroscopy at room temperature and the results were correlated with Raman and conductivity measurements. For comparative purposes, a number of good quality PECVD microc-Si:H samples were also investigated. For PECVD samples the OMS signal is very weak, and only measurable for probe beam energies comparable to the gap of amorphous silicon. This indicates the absence of gap states and therefore a very high crystalline fraction, as confirmed by Raman and TEM measurements. In what concerns RF-sputtered samples, different behaviors can be distinguished: Some samples show a low OMS signal which can be attributed either to a high crystallinity (low density of gap states) or to high recombination rates. These two cases can be distinguished by electrical conductivity values and analysis of the Raman spectra. Other samples exhibit a OMS signal similar to a-Si:H and have low conductivity values, consistent with a Raman spectrum typical of a-Si:H.
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spelling Optical modulation spectroscopy of hydrogenated microcrystalline siliconOptical modulation spectroscopyHydrogenated siliconScience & TechnologyThe properties of microcrystalline silicon thin films prepared by RF sputtering were investigated by optical modulation spectroscopy at room temperature and the results were correlated with Raman and conductivity measurements. For comparative purposes, a number of good quality PECVD microc-Si:H samples were also investigated. For PECVD samples the OMS signal is very weak, and only measurable for probe beam energies comparable to the gap of amorphous silicon. This indicates the absence of gap states and therefore a very high crystalline fraction, as confirmed by Raman and TEM measurements. In what concerns RF-sputtered samples, different behaviors can be distinguished: Some samples show a low OMS signal which can be attributed either to a high crystallinity (low density of gap states) or to high recombination rates. These two cases can be distinguished by electrical conductivity values and analysis of the Raman spectra. Other samples exhibit a OMS signal similar to a-Si:H and have low conductivity values, consistent with a Raman spectrum typical of a-Si:H.FCT-grant from PRAXIS XXIElsevierUniversidade do MinhoCerqueira, M. F.Jansen, John A.Adriaenssens, G. J.Ferreira, J. A.19971997-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/14199eng0040-609010.1016/S0040-6090(96)09353-4http://www.sciencedirect.com/science/article/pii/S0040609096093534info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:12:31Zoai:repositorium.sdum.uminho.pt:1822/14199Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:04:26.928812Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Optical modulation spectroscopy of hydrogenated microcrystalline silicon
title Optical modulation spectroscopy of hydrogenated microcrystalline silicon
spellingShingle Optical modulation spectroscopy of hydrogenated microcrystalline silicon
Cerqueira, M. F.
Optical modulation spectroscopy
Hydrogenated silicon
Science & Technology
title_short Optical modulation spectroscopy of hydrogenated microcrystalline silicon
title_full Optical modulation spectroscopy of hydrogenated microcrystalline silicon
title_fullStr Optical modulation spectroscopy of hydrogenated microcrystalline silicon
title_full_unstemmed Optical modulation spectroscopy of hydrogenated microcrystalline silicon
title_sort Optical modulation spectroscopy of hydrogenated microcrystalline silicon
author Cerqueira, M. F.
author_facet Cerqueira, M. F.
Jansen, John A.
Adriaenssens, G. J.
Ferreira, J. A.
author_role author
author2 Jansen, John A.
Adriaenssens, G. J.
Ferreira, J. A.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Cerqueira, M. F.
Jansen, John A.
Adriaenssens, G. J.
Ferreira, J. A.
dc.subject.por.fl_str_mv Optical modulation spectroscopy
Hydrogenated silicon
Science & Technology
topic Optical modulation spectroscopy
Hydrogenated silicon
Science & Technology
description The properties of microcrystalline silicon thin films prepared by RF sputtering were investigated by optical modulation spectroscopy at room temperature and the results were correlated with Raman and conductivity measurements. For comparative purposes, a number of good quality PECVD microc-Si:H samples were also investigated. For PECVD samples the OMS signal is very weak, and only measurable for probe beam energies comparable to the gap of amorphous silicon. This indicates the absence of gap states and therefore a very high crystalline fraction, as confirmed by Raman and TEM measurements. In what concerns RF-sputtered samples, different behaviors can be distinguished: Some samples show a low OMS signal which can be attributed either to a high crystallinity (low density of gap states) or to high recombination rates. These two cases can be distinguished by electrical conductivity values and analysis of the Raman spectra. Other samples exhibit a OMS signal similar to a-Si:H and have low conductivity values, consistent with a Raman spectrum typical of a-Si:H.
publishDate 1997
dc.date.none.fl_str_mv 1997
1997-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/14199
url http://hdl.handle.net/1822/14199
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0040-6090
10.1016/S0040-6090(96)09353-4
http://www.sciencedirect.com/science/article/pii/S0040609096093534
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
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dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
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