Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition
Autor(a) principal: | |
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Data de Publicação: | 1995 |
Outros Autores: | , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/14188 |
Resumo: | Hydrogenated microcrystalline silicon (microc-Si:H) thin films with Cu as a dopant material (about 2 wt.%) were deposited by RF planar magnetron sputtering in an argon/hydrogen plasma. The composition and microstructure of the films were analysed by SEM, ERD/RBS, X-ray diffraction and Raman spectroscopy. These techniques revealed a columnar film structure, each column consisting of several small (nano) crystals with a lateral dimension up to 10nm. The crystals are oriented, generally with the (111) plane parallel to the sample surface. The hydrogen content of the thin films is about 27-33 at.%. Low deposition rates and low sputter gas pressures favour crystallisation and grain growth. The behaviour can be understood in terms of the diffusion or relaxation length of the deposited Si-atoms. |
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Microcrystalline silicon thin films prepared by RF reactive magnetron sputter depositionHydrogenated microcrystalline siliconMagnetron sputteringX-ray diffractionRaman spectroscopyScience & TechnologyHydrogenated microcrystalline silicon (microc-Si:H) thin films with Cu as a dopant material (about 2 wt.%) were deposited by RF planar magnetron sputtering in an argon/hydrogen plasma. The composition and microstructure of the films were analysed by SEM, ERD/RBS, X-ray diffraction and Raman spectroscopy. These techniques revealed a columnar film structure, each column consisting of several small (nano) crystals with a lateral dimension up to 10nm. The crystals are oriented, generally with the (111) plane parallel to the sample surface. The hydrogen content of the thin films is about 27-33 at.%. Low deposition rates and low sputter gas pressures favour crystallisation and grain growth. The behaviour can be understood in terms of the diffusion or relaxation length of the deposited Si-atoms.ElsevierUniversidade do MinhoCerqueira, M. F.Andritschky, M.Rebouta, L.Ferreira, J. A.Silva, M. F.19951995-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/14188eng0042-207X10.1016/0042-207X(95)00158-1http://www.sciencedirect.com/science/article/pii/0042207X95001581info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:16:20ZPortal AgregadorONG |
dc.title.none.fl_str_mv |
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition |
title |
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition |
spellingShingle |
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition Cerqueira, M. F. Hydrogenated microcrystalline silicon Magnetron sputtering X-ray diffraction Raman spectroscopy Science & Technology |
title_short |
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition |
title_full |
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition |
title_fullStr |
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition |
title_full_unstemmed |
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition |
title_sort |
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition |
author |
Cerqueira, M. F. |
author_facet |
Cerqueira, M. F. Andritschky, M. Rebouta, L. Ferreira, J. A. Silva, M. F. |
author_role |
author |
author2 |
Andritschky, M. Rebouta, L. Ferreira, J. A. Silva, M. F. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Cerqueira, M. F. Andritschky, M. Rebouta, L. Ferreira, J. A. Silva, M. F. |
dc.subject.por.fl_str_mv |
Hydrogenated microcrystalline silicon Magnetron sputtering X-ray diffraction Raman spectroscopy Science & Technology |
topic |
Hydrogenated microcrystalline silicon Magnetron sputtering X-ray diffraction Raman spectroscopy Science & Technology |
description |
Hydrogenated microcrystalline silicon (microc-Si:H) thin films with Cu as a dopant material (about 2 wt.%) were deposited by RF planar magnetron sputtering in an argon/hydrogen plasma. The composition and microstructure of the films were analysed by SEM, ERD/RBS, X-ray diffraction and Raman spectroscopy. These techniques revealed a columnar film structure, each column consisting of several small (nano) crystals with a lateral dimension up to 10nm. The crystals are oriented, generally with the (111) plane parallel to the sample surface. The hydrogen content of the thin films is about 27-33 at.%. Low deposition rates and low sputter gas pressures favour crystallisation and grain growth. The behaviour can be understood in terms of the diffusion or relaxation length of the deposited Si-atoms. |
publishDate |
1995 |
dc.date.none.fl_str_mv |
1995 1995-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/14188 |
url |
http://hdl.handle.net/1822/14188 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0042-207X 10.1016/0042-207X(95)00158-1 http://www.sciencedirect.com/science/article/pii/0042207X95001581 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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repository.mail.fl_str_mv |
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1777303719462830080 |