Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples

Bibliographic Details
Main Author: Monteiro, T.
Publication Date: 2001
Other Authors: Soares, J., Correia, M.R., Alves, E.
Format: Article
Language: eng
Source: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Download full: http://hdl.handle.net/10773/6195
Summary: Er-related luminescence near 1.54 mm ~;805 meV! is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified.
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spelling Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samplesoxygenerbiumgallium compoundsIII-V semiconductorsannealingphotoluminescenceRutherford backscatteringion implantationimpurity statesEr-related luminescence near 1.54 mm ~;805 meV! is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified.AIP2012-02-10T13:54:03Z2001-03-01T00:00:00Z2001-03info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/6195eng0021-8979Monteiro, T.Soares, J.Correia, M.R.Alves, E.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:08:06Zoai:ria.ua.pt:10773/6195Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:43:26.290602Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
title Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
spellingShingle Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
Monteiro, T.
oxygen
erbium
gallium compounds
III-V semiconductors
annealing
photoluminescence
Rutherford backscattering
ion implantation
impurity states
title_short Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
title_full Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
title_fullStr Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
title_full_unstemmed Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
title_sort Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples
author Monteiro, T.
author_facet Monteiro, T.
Soares, J.
Correia, M.R.
Alves, E.
author_role author
author2 Soares, J.
Correia, M.R.
Alves, E.
author2_role author
author
author
dc.contributor.author.fl_str_mv Monteiro, T.
Soares, J.
Correia, M.R.
Alves, E.
dc.subject.por.fl_str_mv oxygen
erbium
gallium compounds
III-V semiconductors
annealing
photoluminescence
Rutherford backscattering
ion implantation
impurity states
topic oxygen
erbium
gallium compounds
III-V semiconductors
annealing
photoluminescence
Rutherford backscattering
ion implantation
impurity states
description Er-related luminescence near 1.54 mm ~;805 meV! is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green and red luminescences are observed in implanted samples. The dependence of luminescence on the excitation energy as well as the influence of different nominal fluence and annealing conditions is discussed. Combining the results obtained from photoluminescence and Rutherford backscattering spectrometry, different lattice sites for the optical active Er-related centers are identified.
publishDate 2001
dc.date.none.fl_str_mv 2001-03-01T00:00:00Z
2001-03
2012-02-10T13:54:03Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/6195
url http://hdl.handle.net/10773/6195
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0021-8979
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AIP
publisher.none.fl_str_mv AIP
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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