Interface and thickness dependent domain switching and stability in Mg doped lithium niobate

Detalhes bibliográficos
Autor(a) principal: Neumayer, Sabine M.
Data de Publicação: 2015
Outros Autores: Ivanov, Ilia N., Manzo, Michele, Kholkin, Andrei L., Gallo, Katia, Rodriguez, Brian J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10773/20611
Resumo: Controlling ferroelectric switching in Mg doped lithium niobate (Mg: LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg: LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the \"up\" to the \"down\" state increases with increasing thickness in pure Mg: LN, whereas the voltage required for stable back switching to the original \"up\" state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg: LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg: LN layer above due to the presence of uncompensated polarization charge at the PE-Mg: LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg: LN via electromechanical coupling, which were corroborated with complimentary Raman measurements. (C) 2015 AIP Publishing LLC.
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spelling Interface and thickness dependent domain switching and stability in Mg doped lithium niobateEXCHANGED WAVE-GUIDESPIEZORESPONSE FORCE MICROSCOPYLINBO3 CRYSTALSRAMAN-SPECTROSCOPYSPECTRAFABRICATIONSCATTERINGINVERSIONPHONONSPHASESControlling ferroelectric switching in Mg doped lithium niobate (Mg: LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg: LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the \"up\" to the \"down\" state increases with increasing thickness in pure Mg: LN, whereas the voltage required for stable back switching to the original \"up\" state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg: LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg: LN layer above due to the presence of uncompensated polarization charge at the PE-Mg: LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg: LN via electromechanical coupling, which were corroborated with complimentary Raman measurements. (C) 2015 AIP Publishing LLC.AMER INST PHYSICS2017-12-07T19:53:17Z2015-01-01T00:00:00Z2015info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/20611eng0021-897910.1063/1.4936605Neumayer, Sabine M.Ivanov, Ilia N.Manzo, MicheleKholkin, Andrei L.Gallo, KatiaRodriguez, Brian J.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:40:31Zoai:ria.ua.pt:10773/20611Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T02:55:17.098779Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
title Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
spellingShingle Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
Neumayer, Sabine M.
EXCHANGED WAVE-GUIDES
PIEZORESPONSE FORCE MICROSCOPY
LINBO3 CRYSTALS
RAMAN-SPECTROSCOPY
SPECTRA
FABRICATION
SCATTERING
INVERSION
PHONONS
PHASES
title_short Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
title_full Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
title_fullStr Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
title_full_unstemmed Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
title_sort Interface and thickness dependent domain switching and stability in Mg doped lithium niobate
author Neumayer, Sabine M.
author_facet Neumayer, Sabine M.
Ivanov, Ilia N.
Manzo, Michele
Kholkin, Andrei L.
Gallo, Katia
Rodriguez, Brian J.
author_role author
author2 Ivanov, Ilia N.
Manzo, Michele
Kholkin, Andrei L.
Gallo, Katia
Rodriguez, Brian J.
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Neumayer, Sabine M.
Ivanov, Ilia N.
Manzo, Michele
Kholkin, Andrei L.
Gallo, Katia
Rodriguez, Brian J.
dc.subject.por.fl_str_mv EXCHANGED WAVE-GUIDES
PIEZORESPONSE FORCE MICROSCOPY
LINBO3 CRYSTALS
RAMAN-SPECTROSCOPY
SPECTRA
FABRICATION
SCATTERING
INVERSION
PHONONS
PHASES
topic EXCHANGED WAVE-GUIDES
PIEZORESPONSE FORCE MICROSCOPY
LINBO3 CRYSTALS
RAMAN-SPECTROSCOPY
SPECTRA
FABRICATION
SCATTERING
INVERSION
PHONONS
PHASES
description Controlling ferroelectric switching in Mg doped lithium niobate (Mg: LN) is of fundamental importance for optical device and domain wall electronics applications that require precise domain patterns. Stable ferroelectric switching has been previously observed in undoped LN layers above proton exchanged (PE) phases that exhibit reduced polarization, whereas PE layers have been found to inhibit lateral domain growth. Here, Mg doping, which is known to significantly alter ferroelectric switching properties including coercive field and switching currents, is shown to inhibit domain nucleation and stability in Mg: LN above buried PE phases that allow for precise ferroelectric patterning via domain growth control. Furthermore, piezoresponse force microscopy (PFM) and switching spectroscopy PFM reveal that the voltage at which polarization switches from the \"up\" to the \"down\" state increases with increasing thickness in pure Mg: LN, whereas the voltage required for stable back switching to the original \"up\" state does not exhibit this thickness dependence. This behavior is consistent with the presence of an internal frozen defect field. The inhibition of domain nucleation above PE interfaces, observed in this study, is a phenomenon that occurs in Mg: LN but not in undoped samples and is mainly ascribed to a remaining frozen polarization in the PE phase that opposes polarization reversal. This reduced frozen depolarization field in the PE phase also influences the depolarization field of the Mg: LN layer above due to the presence of uncompensated polarization charge at the PE-Mg: LN boundary. These alterations in internal electric fields within the sample cause long-range lattice distortions in Mg: LN via electromechanical coupling, which were corroborated with complimentary Raman measurements. (C) 2015 AIP Publishing LLC.
publishDate 2015
dc.date.none.fl_str_mv 2015-01-01T00:00:00Z
2015
2017-12-07T19:53:17Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10773/20611
url http://hdl.handle.net/10773/20611
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 0021-8979
10.1063/1.4936605
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv AMER INST PHYSICS
publisher.none.fl_str_mv AMER INST PHYSICS
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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