Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
Autor(a) principal: | |
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Data de Publicação: | 2018 |
Outros Autores: | , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/30554 |
Resumo: | In this work we present a method to grow Sb2Se3 thin films with a potential use as absorber layers in solar cell structures. The films were grown on several substrates: soda-lime glass, Mo coated soda-lime glass and Si . The Sb-Se precursor’s films were deposited by RF magnetron sputtering and then selenized under a H2Se gas flow. Different selenization temperatures were tested and analysed. Compositional and morphological analyses were performed by Energy Dispersive Spectroscopy and Scanning Electron Microscopy, respectively. Phase identification and structural characterization were done by X-ray Diffraction and Raman scattering spectroscopy showing that Sb2Se3 is the dominant phase with an orthorhombic crystalline structure. Traces of rhombohedral and amorphous Se secondary phases were also observed supported by their Se-rich compositions. Visible-NIR reflectance measurements allowed to extract a direct bandgap with a value close to 1.06 eV. Photoluminescence spectroscopy shows an emission with a broad band at 0.85 eV for samples selenized at lower temperatures and an intense peak at 0.75 eV for the sample selenized at higher temperatures. Electrical characterization shows low free hole concentrations and mobilities. At low temperatures, the nearest neighbour hopping is the dominant mechanism for the electronic transport for the analysed samples. Both electrical and optical properties are influenced by the type of defects present on samples. A discussion is made on the properties that need to be improved in order that these films can be integrated into thin film solar cells. |
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Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursorsSb2Se3Thin filmRamanXRDIn this work we present a method to grow Sb2Se3 thin films with a potential use as absorber layers in solar cell structures. The films were grown on several substrates: soda-lime glass, Mo coated soda-lime glass and Si . The Sb-Se precursor’s films were deposited by RF magnetron sputtering and then selenized under a H2Se gas flow. Different selenization temperatures were tested and analysed. Compositional and morphological analyses were performed by Energy Dispersive Spectroscopy and Scanning Electron Microscopy, respectively. Phase identification and structural characterization were done by X-ray Diffraction and Raman scattering spectroscopy showing that Sb2Se3 is the dominant phase with an orthorhombic crystalline structure. Traces of rhombohedral and amorphous Se secondary phases were also observed supported by their Se-rich compositions. Visible-NIR reflectance measurements allowed to extract a direct bandgap with a value close to 1.06 eV. Photoluminescence spectroscopy shows an emission with a broad band at 0.85 eV for samples selenized at lower temperatures and an intense peak at 0.75 eV for the sample selenized at higher temperatures. Electrical characterization shows low free hole concentrations and mobilities. At low temperatures, the nearest neighbour hopping is the dominant mechanism for the electronic transport for the analysed samples. Both electrical and optical properties are influenced by the type of defects present on samples. A discussion is made on the properties that need to be improved in order that these films can be integrated into thin film solar cells.Elsevier2021-02-11T12:43:58Z2018-12-01T00:00:00Z2018-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/30554eng0927-024810.1016/j.solmat.2018.08.003Shongalova, A.Correia, M. R.Teixeira, J. P.Leitão, J. P.González, J. C.Ranjbar, S.Garud, S.Vermang, B.Cunha, J. M. V.Salomé, P. M. P.Fernandes, P. A.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:59:00Zoai:ria.ua.pt:10773/30554Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:02:36.324767Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors |
title |
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors |
spellingShingle |
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors Shongalova, A. Sb2Se3 Thin film Raman XRD |
title_short |
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors |
title_full |
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors |
title_fullStr |
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors |
title_full_unstemmed |
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors |
title_sort |
Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors |
author |
Shongalova, A. |
author_facet |
Shongalova, A. Correia, M. R. Teixeira, J. P. Leitão, J. P. González, J. C. Ranjbar, S. Garud, S. Vermang, B. Cunha, J. M. V. Salomé, P. M. P. Fernandes, P. A. |
author_role |
author |
author2 |
Correia, M. R. Teixeira, J. P. Leitão, J. P. González, J. C. Ranjbar, S. Garud, S. Vermang, B. Cunha, J. M. V. Salomé, P. M. P. Fernandes, P. A. |
author2_role |
author author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Shongalova, A. Correia, M. R. Teixeira, J. P. Leitão, J. P. González, J. C. Ranjbar, S. Garud, S. Vermang, B. Cunha, J. M. V. Salomé, P. M. P. Fernandes, P. A. |
dc.subject.por.fl_str_mv |
Sb2Se3 Thin film Raman XRD |
topic |
Sb2Se3 Thin film Raman XRD |
description |
In this work we present a method to grow Sb2Se3 thin films with a potential use as absorber layers in solar cell structures. The films were grown on several substrates: soda-lime glass, Mo coated soda-lime glass and Si . The Sb-Se precursor’s films were deposited by RF magnetron sputtering and then selenized under a H2Se gas flow. Different selenization temperatures were tested and analysed. Compositional and morphological analyses were performed by Energy Dispersive Spectroscopy and Scanning Electron Microscopy, respectively. Phase identification and structural characterization were done by X-ray Diffraction and Raman scattering spectroscopy showing that Sb2Se3 is the dominant phase with an orthorhombic crystalline structure. Traces of rhombohedral and amorphous Se secondary phases were also observed supported by their Se-rich compositions. Visible-NIR reflectance measurements allowed to extract a direct bandgap with a value close to 1.06 eV. Photoluminescence spectroscopy shows an emission with a broad band at 0.85 eV for samples selenized at lower temperatures and an intense peak at 0.75 eV for the sample selenized at higher temperatures. Electrical characterization shows low free hole concentrations and mobilities. At low temperatures, the nearest neighbour hopping is the dominant mechanism for the electronic transport for the analysed samples. Both electrical and optical properties are influenced by the type of defects present on samples. A discussion is made on the properties that need to be improved in order that these films can be integrated into thin film solar cells. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-12-01T00:00:00Z 2018-12-01 2021-02-11T12:43:58Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/30554 |
url |
http://hdl.handle.net/10773/30554 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0927-0248 10.1016/j.solmat.2018.08.003 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799137681667522560 |