Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films

• Autor(a) principal: Silva, José Pedro Basto
• Data de Publicação: 2022
• Outros Autores: Sekhar, K. C., Negrea, R. F., MacManus-Driscoll, J. L., Pintilie, L.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: https://hdl.handle.net/1822/81271
• topic: (Pseudo-)binary oxides; Ferroelectricity; Wake-up effect; Epitaxial growth; Ciências Naturais::Ciências Físicas; Science & Technology

In the last decade orthorhombic hafnia and zirconia films have attracted tremendous attention arising from the discovery of ferroelectricity at the nanoscale. However, an initial wake-up pre-cycling is usually needed to achieve a ferroelectric behaviour in these films. Recently, different strategies, such as microstructure tailoring, defect, bulk and interface engineering, doping, NH3 plasma treatment and epitaxial growth, have been employed to obtain wake-up free orthorhombic ferroelectric hafnia and zirconia films. In this work we review recent developments in obtaining polar hafnia and zirconia-based thin films without the need of any wake-up cycling. In particular, we discuss the rhombohedral phase of hafnia/ zirconia, which under a constrained environment exhibits wake-up-free ferroelectric behaviour. This phase could have a strong impact on the current investigations of ferroelectric binary oxide materials and pave the way toward exploiting ferroelectric behaviour for next-generation memory and logic gate applications.