Role of hole injection in electroforming of LiF-polymer memory diodes

Detalhes bibliográficos
Autor(a) principal: Bory, Benjamin F.
Data de Publicação: 2012
Outros Autores: Gomes, Henrique L., Janssen, R. A. J., De Leeuw, Dago M., Meskers, S. C. J.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.1/6946
Resumo: Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.
id RCAP_74f18a24aa172ff17f105988ac5bbca2
oai_identifier_str oai:sapientia.ualg.pt:10400.1/6946
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str 7160
spelling Role of hole injection in electroforming of LiF-polymer memory diodesAl/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.ACS PublicationsSapientiaBory, Benjamin F.Gomes, Henrique L.Janssen, R. A. J.De Leeuw, Dago M.Meskers, S. C. J.2015-10-28T13:51:40Z20122015-09-22T11:31:21Z2012-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/6946engBory, B.F.; Gomes, H.L.; Janssen, R.A.J.; De Leeuw, D.M.; Meskers, S.C.J.Role of hole injection in electroforming of LiF-polymer memory diodes, Journal of Physical Chemistry C, 116, 23, 12443-12, 2012.AUT: HGO00803;info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:17:58Zoai:sapientia.ualg.pt:10400.1/6946Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:59:23.386935Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Role of hole injection in electroforming of LiF-polymer memory diodes
title Role of hole injection in electroforming of LiF-polymer memory diodes
spellingShingle Role of hole injection in electroforming of LiF-polymer memory diodes
Bory, Benjamin F.
title_short Role of hole injection in electroforming of LiF-polymer memory diodes
title_full Role of hole injection in electroforming of LiF-polymer memory diodes
title_fullStr Role of hole injection in electroforming of LiF-polymer memory diodes
title_full_unstemmed Role of hole injection in electroforming of LiF-polymer memory diodes
title_sort Role of hole injection in electroforming of LiF-polymer memory diodes
author Bory, Benjamin F.
author_facet Bory, Benjamin F.
Gomes, Henrique L.
Janssen, R. A. J.
De Leeuw, Dago M.
Meskers, S. C. J.
author_role author
author2 Gomes, Henrique L.
Janssen, R. A. J.
De Leeuw, Dago M.
Meskers, S. C. J.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Sapientia
dc.contributor.author.fl_str_mv Bory, Benjamin F.
Gomes, Henrique L.
Janssen, R. A. J.
De Leeuw, Dago M.
Meskers, S. C. J.
description Al/LiF/poly(spirofluorene)/Ba/Al diodes submitted to bias voltages near 15 V undergo a change to a nonvolatile memory known as electroforming. Prior to electroforming, electron trapping occurs, followed by a tunneling current due to electrons from the polymer into LiF. At the onset voltage for electroforming, a sudden electroluminescence burst originating from electronic excitations in the polymer is detected. This confirms that hole injection into the polymer through LiF occurs leading to nonvolatile resistive switching.
publishDate 2012
dc.date.none.fl_str_mv 2012
2012-01-01T00:00:00Z
2015-10-28T13:51:40Z
2015-09-22T11:31:21Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.1/6946
url http://hdl.handle.net/10400.1/6946
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Bory, B.F.; Gomes, H.L.; Janssen, R.A.J.; De Leeuw, D.M.; Meskers, S.C.J.Role of hole injection in electroforming of LiF-polymer memory diodes, Journal of Physical Chemistry C, 116, 23, 12443-12, 2012.
AUT: HGO00803;
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv ACS Publications
publisher.none.fl_str_mv ACS Publications
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1799133216709279744

Registros relacionados