Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm

Detalhes bibliográficos
Autor(a) principal: Vieira, N. C. S.
Data de Publicação: 2016
Outros Autores: Borme, J., Machado Jr., G., Cerqueira, M. F., Freitas, P. P., Zucolotto, V., Peres, N. M. R., Alpuim, P.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/1822/43629
Resumo: Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer scale has generally not been sought. Currently, whenever an electrolyte-gated FET (EGFET) is used, an external, cumbersome, out-of-plane gate electrode is required. Here, an alternative architecture for graphene EGFET is presented. In this architecture, source, drain, and gate are in the same plane, eliminating the need for an external gate electrode and the use of an additional reservoir to confine the electrolyte inside the transistor active zone. This planar structure with an integrated gate allows for wafer-scale fabrication of high-performance graphene EGFETs, with carrier mobility up to 1800 cm2 V−1 s−1. As a proof-of principle, a chemical sensor was achieved. It is shown that the sensor can discriminate between saline solutions of different concentrations. The proposed architecture will facilitate the mass production of graphene sensors, materializing the potential of previous achievements in fundamental and applied graphene research.
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spelling Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mmgraphenefield-effect transistorchemical sensorphotolithographygate capacitanceCiências Naturais::Ciências FísicasScience & TechnologyTen years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer scale has generally not been sought. Currently, whenever an electrolyte-gated FET (EGFET) is used, an external, cumbersome, out-of-plane gate electrode is required. Here, an alternative architecture for graphene EGFET is presented. In this architecture, source, drain, and gate are in the same plane, eliminating the need for an external gate electrode and the use of an additional reservoir to confine the electrolyte inside the transistor active zone. This planar structure with an integrated gate allows for wafer-scale fabrication of high-performance graphene EGFETs, with carrier mobility up to 1800 cm2 V−1 s−1. As a proof-of principle, a chemical sensor was achieved. It is shown that the sensor can discriminate between saline solutions of different concentrations. The proposed architecture will facilitate the mass production of graphene sensors, materializing the potential of previous achievements in fundamental and applied graphene research.N.C.S.Vieira acknowledges a Postdoctoral fellowship at INL from FAPESP – SP/Brazil (2014/01663-6). G. Machado Jr. acknowledges a PhD grant (no. 237630/2012-5) from CNPq – Brazil.IOP PublishingUniversidade do MinhoVieira, N. C. S.Borme, J.Machado Jr., G.Cerqueira, M. F.Freitas, P. P.Zucolotto, V.Peres, N. M. R.Alpuim, P.20162016-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfapplication/pdfhttp://hdl.handle.net/1822/43629engVieira, N. C. S., Borme, J., Machado, G., Jr., Cerqueira, F., Freitas, P. P., Zucolotto, V., Peres, N. M. R., Alpuim, P. (2016). Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm. Journal of Physics-Condensed Matter, 28(8). doi: 10.1088/0953-8984/28/8/0853020953-898410.1088/0953-8984/28/8/085302http://iopscience.iop.org/article/10.1088/0953-8984/28/8/085302/pdfinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:14:06Zoai:repositorium.sdum.uminho.pt:1822/43629Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:06:20.249975Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
title Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
spellingShingle Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
Vieira, N. C. S.
graphene
field-effect transistor
chemical sensor
photolithography
gate capacitance
Ciências Naturais::Ciências Físicas
Science & Technology
title_short Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
title_full Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
title_fullStr Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
title_full_unstemmed Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
title_sort Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm
author Vieira, N. C. S.
author_facet Vieira, N. C. S.
Borme, J.
Machado Jr., G.
Cerqueira, M. F.
Freitas, P. P.
Zucolotto, V.
Peres, N. M. R.
Alpuim, P.
author_role author
author2 Borme, J.
Machado Jr., G.
Cerqueira, M. F.
Freitas, P. P.
Zucolotto, V.
Peres, N. M. R.
Alpuim, P.
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Vieira, N. C. S.
Borme, J.
Machado Jr., G.
Cerqueira, M. F.
Freitas, P. P.
Zucolotto, V.
Peres, N. M. R.
Alpuim, P.
dc.subject.por.fl_str_mv graphene
field-effect transistor
chemical sensor
photolithography
gate capacitance
Ciências Naturais::Ciências Físicas
Science & Technology
topic graphene
field-effect transistor
chemical sensor
photolithography
gate capacitance
Ciências Naturais::Ciências Físicas
Science & Technology
description Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wafer scale has generally not been sought. Currently, whenever an electrolyte-gated FET (EGFET) is used, an external, cumbersome, out-of-plane gate electrode is required. Here, an alternative architecture for graphene EGFET is presented. In this architecture, source, drain, and gate are in the same plane, eliminating the need for an external gate electrode and the use of an additional reservoir to confine the electrolyte inside the transistor active zone. This planar structure with an integrated gate allows for wafer-scale fabrication of high-performance graphene EGFETs, with carrier mobility up to 1800 cm2 V−1 s−1. As a proof-of principle, a chemical sensor was achieved. It is shown that the sensor can discriminate between saline solutions of different concentrations. The proposed architecture will facilitate the mass production of graphene sensors, materializing the potential of previous achievements in fundamental and applied graphene research.
publishDate 2016
dc.date.none.fl_str_mv 2016
2016-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/1822/43629
url http://hdl.handle.net/1822/43629
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Vieira, N. C. S., Borme, J., Machado, G., Jr., Cerqueira, F., Freitas, P. P., Zucolotto, V., Peres, N. M. R., Alpuim, P. (2016). Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm. Journal of Physics-Condensed Matter, 28(8). doi: 10.1088/0953-8984/28/8/085302
0953-8984
10.1088/0953-8984/28/8/085302
http://iopscience.iop.org/article/10.1088/0953-8984/28/8/085302/pdf
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv IOP Publishing
publisher.none.fl_str_mv IOP Publishing
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
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