Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films

Detalhes bibliográficos
Autor(a) principal: Vygranenko, Yuri
Data de Publicação: 2021
Outros Autores: Fernandes, M., Vieira, Manuela, Lavareda, G., Carvalho, C. Nunes De, Brogueira, P., Amaral, A., Barradas, N. P., Alves, E.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10400.21/12547
Resumo: This work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate temperatures ranging from 373 to 423 K. Rutherford backscattering analysis and secondary-ion mass spectrometry were used to determine the chemical composition of the films. The film characterization includes electrical, optical, and photoconductivity measurements. The resistivity of undoped material varies in a wide range of 1 G Omega-cm to 2 T Omega-cm depending on deposition conditions. Sn doping leads to a decrease in the resistance down to 8 M Omega-cm. The films are highly transparent in the visible-infrared region due to an indirect bandgap of 2.7-3 eV. Moreover, the doped material is highly photosensitive in the blue -UV region. Photoconductivity kinetics under various excitation conditions was also studied. The synthesized material is a promising candidate for a buffer layer in chalcogenide-based solar cells.
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spelling Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin filmsIndium sulfofluorideThin-filmsAmorphous semiconductorsOptical propertiesPhotoconductivityPhotovoltaicsThis work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate temperatures ranging from 373 to 423 K. Rutherford backscattering analysis and secondary-ion mass spectrometry were used to determine the chemical composition of the films. The film characterization includes electrical, optical, and photoconductivity measurements. The resistivity of undoped material varies in a wide range of 1 G Omega-cm to 2 T Omega-cm depending on deposition conditions. Sn doping leads to a decrease in the resistance down to 8 M Omega-cm. The films are highly transparent in the visible-infrared region due to an indirect bandgap of 2.7-3 eV. Moreover, the doped material is highly photosensitive in the blue -UV region. Photoconductivity kinetics under various excitation conditions was also studied. The synthesized material is a promising candidate for a buffer layer in chalcogenide-based solar cells.ElsevierRCIPLVygranenko, YuriFernandes, M.Vieira, ManuelaLavareda, G.Carvalho, C. Nunes DeBrogueira, P.Amaral, A.Barradas, N. P.Alves, E.2021-01-05T14:20:23Z2021-012021-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.21/12547engVYGRANENKO, Y.; [et al] – Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films. Materials Science in Semiconductor Processing. ISSN 1369-8001. Vol. 121 (2021), pp. 1-51369-800110.1016/j.mssp.2020.105349metadata only accessinfo:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-08-03T10:05:39ZPortal AgregadorONG
dc.title.none.fl_str_mv Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films
title Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films
spellingShingle Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films
Vygranenko, Yuri
Indium sulfofluoride
Thin-films
Amorphous semiconductors
Optical properties
Photoconductivity
Photovoltaics
title_short Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films
title_full Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films
title_fullStr Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films
title_full_unstemmed Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films
title_sort Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films
author Vygranenko, Yuri
author_facet Vygranenko, Yuri
Fernandes, M.
Vieira, Manuela
Lavareda, G.
Carvalho, C. Nunes De
Brogueira, P.
Amaral, A.
Barradas, N. P.
Alves, E.
author_role author
author2 Fernandes, M.
Vieira, Manuela
Lavareda, G.
Carvalho, C. Nunes De
Brogueira, P.
Amaral, A.
Barradas, N. P.
Alves, E.
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv RCIPL
dc.contributor.author.fl_str_mv Vygranenko, Yuri
Fernandes, M.
Vieira, Manuela
Lavareda, G.
Carvalho, C. Nunes De
Brogueira, P.
Amaral, A.
Barradas, N. P.
Alves, E.
dc.subject.por.fl_str_mv Indium sulfofluoride
Thin-films
Amorphous semiconductors
Optical properties
Photoconductivity
Photovoltaics
topic Indium sulfofluoride
Thin-films
Amorphous semiconductors
Optical properties
Photoconductivity
Photovoltaics
description This work reports on undoped and Sn-doped indium sulfofluoride thin-films deposited by radio-frequency plasma-enhanced reactive thermal evaporation. The deposition was performed evaporating pure indium or indium-tin alloy in SF6 plasma at substrate temperatures ranging from 373 to 423 K. Rutherford backscattering analysis and secondary-ion mass spectrometry were used to determine the chemical composition of the films. The film characterization includes electrical, optical, and photoconductivity measurements. The resistivity of undoped material varies in a wide range of 1 G Omega-cm to 2 T Omega-cm depending on deposition conditions. Sn doping leads to a decrease in the resistance down to 8 M Omega-cm. The films are highly transparent in the visible-infrared region due to an indirect bandgap of 2.7-3 eV. Moreover, the doped material is highly photosensitive in the blue -UV region. Photoconductivity kinetics under various excitation conditions was also studied. The synthesized material is a promising candidate for a buffer layer in chalcogenide-based solar cells.
publishDate 2021
dc.date.none.fl_str_mv 2021-01-05T14:20:23Z
2021-01
2021-01-01T00:00:00Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10400.21/12547
url http://hdl.handle.net/10400.21/12547
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv VYGRANENKO, Y.; [et al] – Electrical, optical and photoconductive properties of Sn-doped indium sulfofluoride thin films. Materials Science in Semiconductor Processing. ISSN 1369-8001. Vol. 121 (2021), pp. 1-5
1369-8001
10.1016/j.mssp.2020.105349
dc.rights.driver.fl_str_mv metadata only access
info:eu-repo/semantics/openAccess
rights_invalid_str_mv metadata only access
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
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instacron_str RCAAP
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repository.mail.fl_str_mv
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