Characterization of TiAlSiN/TiAlSiON/SiO2 optical stack designed by modelling calculations for solar selective applications

• Autor(a) principal: Rebouta, L.
• Data de Publicação: 2012
• Outros Autores: Capela, Paulina Araújo, Andritschky, M., Matilainen, A., Santilli, P., Pischow, K., Alves, E.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/1822/37368
• topic: TiAlSiN; Dielectric function modelling; Solar selective absorber; Optical constants; SiO2; Science & Technology

Preparation and characterization of TiAlSiN/TiAlSiON/SiO2 solar selective absorber is reported in this contribution. All layers were deposited in a continuous mode using a industrial equipment, the nitride and oxynitride were prepared by reactive magnetron sputtering and the SiO2 layer by Plasma Enhanced Chemical Vapour Deposition. The optical constants of individual layers were calculated by modelling of spectral transmittance and reflectance of the individual layers. The three layer stack absorber was then designed using those optical properties. The thickness of the individual layers was optimized until a solar absorptance of 96% was obtained resulting in a total thickness of about 200 nm, deposited in copper and extruded aluminium absorbers. An emissivity of 5 % for an absorber temperature of 100 ºC was obtained by analyzing the measuring data from a FTIR spectrometer with integrating sphere. After test duration of 600 h, the samples subjected to a thermal annealing at 278 ºC in air showed a performance criterion (PC) below 4% for, while the samples in the humidity tests showed a PC below 2 %.