Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2017 |
| Outros Autores: | , , , , , , , |
| Tipo de documento: | Artigo |
| Idioma: | eng |
| Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
| Texto Completo: | https://hdl.handle.net/1822/47139 |
Resumo: | An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/ BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/ HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc=140°C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices. |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layerScience & TechnologyAn enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/ BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/ HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc=140°C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.This work was supported by: (i) Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding UID/FIS/04650/2013; (ii) European COST Action MP1308-TO-BE; (iii) Project Norte- 070124-FEDER-000070 Nanomateriais Multifuncionais. The authors J.P.B.S., K.K. and F.L.F. are grateful for financial support through the FCT Grants SFRH/BPD/92896/2013, SFRH/BPD/87215/2012 and CNPq/PDE 249791/2013-7, respectively. The authors thank the Central Laboratory of Electron Microscopy (LCME – UFSC) and the Laboratory of X-rays Diffraction (LDRX - UFSC) by facilities. The authors would also like to thank Engineer José Santos for technical support at Thin Films Laboratoryinfo:eu-repo/semantics/publishedVersionNature Publishing GroupUniversidade do MinhoSilva, J. P. B.Faita, F. L.Kamakshi, KoppoleSekhar, K. C.Moreira, J. AgostinhoAlmeida, A.Pereira, MárioPasa, A. A.Gomes, M. J. M.2017-04-112017-04-11T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/1822/47139eng2045-232210.1038/srep4635028397865info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-21T12:20:13ZPortal AgregadorONG |
| dc.title.none.fl_str_mv |
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer |
| title |
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer |
| spellingShingle |
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer Silva, J. P. B. Science & Technology |
| title_short |
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer |
| title_full |
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer |
| title_fullStr |
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer |
| title_full_unstemmed |
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer |
| title_sort |
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer |
| author |
Silva, J. P. B. |
| author_facet |
Silva, J. P. B. Faita, F. L. Kamakshi, Koppole Sekhar, K. C. Moreira, J. Agostinho Almeida, A. Pereira, Mário Pasa, A. A. Gomes, M. J. M. |
| author_role |
author |
| author2 |
Faita, F. L. Kamakshi, Koppole Sekhar, K. C. Moreira, J. Agostinho Almeida, A. Pereira, Mário Pasa, A. A. Gomes, M. J. M. |
| author2_role |
author author author author author author author author |
| dc.contributor.none.fl_str_mv |
Universidade do Minho |
| dc.contributor.author.fl_str_mv |
Silva, J. P. B. Faita, F. L. Kamakshi, Koppole Sekhar, K. C. Moreira, J. Agostinho Almeida, A. Pereira, Mário Pasa, A. A. Gomes, M. J. M. |
| dc.subject.por.fl_str_mv |
Science & Technology |
| topic |
Science & Technology |
| description |
An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/ BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/ HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc=140°C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices. |
| publishDate |
2017 |
| dc.date.none.fl_str_mv |
2017-04-11 2017-04-11T00:00:00Z |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/1822/47139 |
| url |
https://hdl.handle.net/1822/47139 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
2045-2322 10.1038/srep46350 28397865 |
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info:eu-repo/semantics/openAccess |
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openAccess |
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application/pdf |
| dc.publisher.none.fl_str_mv |
Nature Publishing Group |
| publisher.none.fl_str_mv |
Nature Publishing Group |
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reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
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RCAAP |
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RCAAP |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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