Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion

Detalhes bibliográficos
Autor(a) principal: Filanovsky, Igor M.
Data de Publicação: 2019
Outros Autores: Oliveira, Luis B., Tchamov, Nikolay T.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: http://hdl.handle.net/10362/93391
Resumo: This work was supported in part by the NSERC, Canada, in part by the Portuguese Foundation for Science and Technology under Project PESTOEEEI/UI0066/2015 and foRESTER Project PCIF/SSI/0102/2017, and in part by the Academy of Finland.
id RCAP_a7d6bf9467988bae0f2e466f6f050019
oai_identifier_str oai:run.unl.pt:10362/93391
network_acronym_str RCAP
network_name_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository_id_str 7160
spelling Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversiondrain current harmonicslow-distortion/low-voltage amplifiermoderate inversionMOS transistor modelsaturationElectrical and Electronic EngineeringThis work was supported in part by the NSERC, Canada, in part by the Portuguese Foundation for Science and Technology under Project PESTOEEEI/UI0066/2015 and foRESTER Project PCIF/SSI/0102/2017, and in part by the Academy of Finland.This paper describes analysis of nonlinear effects in a MOS transistor operating in moderate inversion and saturation. The dependence of the drain current on the gate-source and drain-source voltages is described using a modified version of the 'reconciliation' model developed by Y. Tsividis. In the new model, the current components, which correspond to the terms depending exponentially on normalized gate-source or drain-source modulating sinusoidal voltages, are presented using modified Bessel functions. This approach allows one to find the first, second, and third harmonics of the drain current caused by the gate-source or drain-source voltage sinusoidal modulation and find also the intermodulation terms produced by these two modulating voltages. The results are applied to set the requirements to the gate-source and drain-source bias voltages in design of low-distortion and/or low-voltage amplifiers. It is shown that the realization of the stage with the zero value of third-order harmonic requires extremely tight tolerances for the threshold voltage. The suppression of intermodulation terms requires increased drain-source voltage. These recommendations are confirmed by simulations.DEE2010-A2 ElectrónicaCTS - Centro de Tecnologia e SistemasUNINOVA-Instituto de Desenvolvimento de Novas TecnologiasDEE - Departamento de Engenharia Electrotécnica e de ComputadoresRUNFilanovsky, Igor M.Oliveira, Luis B.Tchamov, Nikolay T.2020-02-26T23:41:38Z2019-05-012019-05-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article11application/pdfhttp://hdl.handle.net/10362/93391eng1549-8328PURE: 13106549https://doi.org/10.1109/TCSI.2018.2885166info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-03-11T04:41:45Zoai:run.unl.pt:10362/93391Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:37:43.840001Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion
title Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion
spellingShingle Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion
Filanovsky, Igor M.
drain current harmonics
low-distortion/low-voltage amplifier
moderate inversion
MOS transistor model
saturation
Electrical and Electronic Engineering
title_short Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion
title_full Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion
title_fullStr Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion
title_full_unstemmed Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion
title_sort Using Modified Bessel Functions for Analysis of Nonlinear Effects in a MOS Transistor Operating in Moderate Inversion
author Filanovsky, Igor M.
author_facet Filanovsky, Igor M.
Oliveira, Luis B.
Tchamov, Nikolay T.
author_role author
author2 Oliveira, Luis B.
Tchamov, Nikolay T.
author2_role author
author
dc.contributor.none.fl_str_mv DEE2010-A2 Electrónica
CTS - Centro de Tecnologia e Sistemas
UNINOVA-Instituto de Desenvolvimento de Novas Tecnologias
DEE - Departamento de Engenharia Electrotécnica e de Computadores
RUN
dc.contributor.author.fl_str_mv Filanovsky, Igor M.
Oliveira, Luis B.
Tchamov, Nikolay T.
dc.subject.por.fl_str_mv drain current harmonics
low-distortion/low-voltage amplifier
moderate inversion
MOS transistor model
saturation
Electrical and Electronic Engineering
topic drain current harmonics
low-distortion/low-voltage amplifier
moderate inversion
MOS transistor model
saturation
Electrical and Electronic Engineering
description This work was supported in part by the NSERC, Canada, in part by the Portuguese Foundation for Science and Technology under Project PESTOEEEI/UI0066/2015 and foRESTER Project PCIF/SSI/0102/2017, and in part by the Academy of Finland.
publishDate 2019
dc.date.none.fl_str_mv 2019-05-01
2019-05-01T00:00:00Z
2020-02-26T23:41:38Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10362/93391
url http://hdl.handle.net/10362/93391
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 1549-8328
PURE: 13106549
https://doi.org/10.1109/TCSI.2018.2885166
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 11
application/pdf
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv
_version_ 1799137994233348096

Registros relacionados