Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface
Autor(a) principal: | |
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Data de Publicação: | 2007 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10400.1/6597 |
Resumo: | Capacitance-voltage (C-V) measurements have been undertaken on metal-insulator-semiconductor capacitors formed from atomic-layer-deposited films of aluminium titanium oxide as the insulator and poly(3-hexylthiophene) as the insulator. Upon cycling from -30 to +30 V in the dark, the C-V plots show large, temperature-dependent, reversible shifts in the flatband voltage to more negative voltages consistent with reversible, shallow hole trapping at or near the insulator-semiconductor interface. When illuminated with photons of energy exceeding the polymer band gap, even larger shifts to positive voltages are observed accompanied by inversion layer formation. This latter effect has potential applications in optical sensing. (c) 2007 American Institute of Physics. |
id |
RCAP_a8276a407e1eef052c963075ac94da8a |
---|---|
oai_identifier_str |
oai:sapientia.ualg.pt:10400.1/6597 |
network_acronym_str |
RCAP |
network_name_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository_id_str |
7160 |
spelling |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interfaceCapacitance-voltage (C-V) measurements have been undertaken on metal-insulator-semiconductor capacitors formed from atomic-layer-deposited films of aluminium titanium oxide as the insulator and poly(3-hexylthiophene) as the insulator. Upon cycling from -30 to +30 V in the dark, the C-V plots show large, temperature-dependent, reversible shifts in the flatband voltage to more negative voltages consistent with reversible, shallow hole trapping at or near the insulator-semiconductor interface. When illuminated with photons of energy exceeding the polymer band gap, even larger shifts to positive voltages are observed accompanied by inversion layer formation. This latter effect has potential applications in optical sensing. (c) 2007 American Institute of Physics.American Institute of PhysicsSapientiaLancaster, J.Taylor, D. M.Sayers, P.Gomes, Henrique L.2015-06-26T14:18:41Z20072007-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10400.1/6597eng0003-6951AUT: HGO00803;https://dx.doi.org/10.1063/1.2711531info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2023-07-24T10:17:45Zoai:sapientia.ualg.pt:10400.1/6597Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-19T19:59:14.902052Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface |
title |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface |
spellingShingle |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface Lancaster, J. |
title_short |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface |
title_full |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface |
title_fullStr |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface |
title_full_unstemmed |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface |
title_sort |
Voltage- and light-induced hysteresis effects at the high-k dielectric- poly(3-hexylthiophene) interface |
author |
Lancaster, J. |
author_facet |
Lancaster, J. Taylor, D. M. Sayers, P. Gomes, Henrique L. |
author_role |
author |
author2 |
Taylor, D. M. Sayers, P. Gomes, Henrique L. |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Sapientia |
dc.contributor.author.fl_str_mv |
Lancaster, J. Taylor, D. M. Sayers, P. Gomes, Henrique L. |
description |
Capacitance-voltage (C-V) measurements have been undertaken on metal-insulator-semiconductor capacitors formed from atomic-layer-deposited films of aluminium titanium oxide as the insulator and poly(3-hexylthiophene) as the insulator. Upon cycling from -30 to +30 V in the dark, the C-V plots show large, temperature-dependent, reversible shifts in the flatband voltage to more negative voltages consistent with reversible, shallow hole trapping at or near the insulator-semiconductor interface. When illuminated with photons of energy exceeding the polymer band gap, even larger shifts to positive voltages are observed accompanied by inversion layer formation. This latter effect has potential applications in optical sensing. (c) 2007 American Institute of Physics. |
publishDate |
2007 |
dc.date.none.fl_str_mv |
2007 2007-01-01T00:00:00Z 2015-06-26T14:18:41Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10400.1/6597 |
url |
http://hdl.handle.net/10400.1/6597 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0003-6951 AUT: HGO00803; https://dx.doi.org/10.1063/1.2711531 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
American Institute of Physics |
publisher.none.fl_str_mv |
American Institute of Physics |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
|
_version_ |
1799133214590107648 |